19DEC07 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 CSC" RELEASED FOR PU BLIC A TIO N PT3T REVISIONS SEJE J B Y AMP INCORPORATED.ALL R IG H TS RESERVED . DESCRIPTION LTR ECR-07-030667 R E V I S ED 0 .5 DUN 1 Ì T 19DEC07 APVO J.S S.M D & ~7* X? 'V h ; 1 >J — - r » »

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. k// COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. REVISIONS DIST HM 00 P LTR DESCRIPTION DWN APVD J OBS 5 - , REV ECO—07—025549 19DEC07 LH SA K REVISED PER E C O -0 8 -0 3 1 715

MIC24D10-0101

Contextual Info: more than you expect Integrated 2x6 10/100 Base–T RJ45 LANDatacom Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Turns Ratio 1CT:1CT Insertion Loss -1.0dB typ. -20dB min. -16dB min. Return Loss -12dB min. -12dB min. Cross Talk -30dB min.

manual temperature controller CHB 702

Abstract: MC9S12XF asea MBT 160 S12XF256 NVP 1204 1M64J S12XF384 transistor f a614 729 PIN CONFIGURATION 2M64J Logic Cross-Reference
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.17 02-October-2008 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

C 5478

Abstract: AN609 SUP40N25-60
Contextual Info: SUP40N25-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

mosfet 4414

Abstract: Si8451DB AN609
Contextual Info: Si8451DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Contextual Info: Si1405BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

31117

Abstract: AN609 M/LM 31117
Contextual Info: SiB414DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: SUP45N03-13L
Contextual Info: SUP45N03-13L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

4614 mosfet

Abstract: 60241 C diode 1334 MOSFET 4614 AN609 Si8417DB 18243 68338
Contextual Info: Si8417DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUM110P06-08L

Abstract: 7106 transistor m 9587 AN609
Contextual Info: SUM110P06-08L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si4840BDY
Contextual Info: Si4840BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

6948

Abstract: AN609 SUP28N15-52
Contextual Info: SUP28N15-52_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

27332

Abstract: AN609 SUP60N10-16L
Contextual Info: SUP60N10-16L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 4267 MHz 4442 MHz Tuning Voltage: 0.1 16 VDC Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm Supply Current: 30 40 mA Harmonic Suppression 2nd Harmonic : -20 -10

RF Module 5.8Ghz

Abstract: P1044-QL
Contextual Info: 5.7-5.9 GHz 3W Power Amplifier Module December 2007 - Rev 19-Dec-07 P1044-QL Features Functional Block Diagram P1dB, 34.5 dBm Pout 27 dBm @ EVM = 2.5% OIP3, 46 dBm Gain,17 dB Voltage, 8V Negative Voltage Required Input and Output Internally Matched 7X7mm Surface Mount Package

Contextual Info: more than you expect Integrated 2x4 10/100 Base–T RJ45 LANDatacom Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Turns Ratio 1CT:1CT Insertion Loss -1.0dB typ. -20dB typ. -16dB typ. Return Loss -14dB typ. -12dB typ. Cross Talk -30dB typ.

PTCSGM3

Contextual Info: 2381 671 912./PTCSG.T.BE Vishay BCcomponents PTC Thermistors, For Temperature Protection FEATURES • • • • • • • • • QUICK REFERENCE DATA PARAMETER Well-defined protection temperature levels Fast reaction time < 30 s in still air Accurate resistance for ease of circuit design

Vishay 2222 045

Abstract: MAL214036221E3 MAL21
Contextual Info: 140 RTM Vishay BCcomponents Aluminum Capacitors Radial, High Temperature Miniature FEATURES • Polarized aluminum non-solid electrolyte electrolytic capacitors, RoHS • Radial leads, cylindrical aluminum case with COMPLIANT pressure relief, insulated with a blue sleeve

Si1067

Abstract: AN609 Si1067X
Contextual Info: Si1067X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

68307

Abstract: AN609 Si1065X
Contextual Info: Si1065X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Contextual Info: Si1905BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: 25803 12679
Contextual Info: Si7166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7336

Abstract: AN609 SUU50N03-09P 68326
Contextual Info: SUU50N03-09P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].