8441
Abstract: Si8451DB VISHAY
Contextual Info: Device Orientation - MICRO FOOT Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8441DB Si8451DB MICRO FOOT® 2 x 3: 0.5 mm PITCH, 0.250 mm BUMP HEIGHT Part Number Method Si8441DB T2 Si8451DB T2 Device on Tape Orientation
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mosfet 4414
Abstract: Si8451DB AN609
Contextual Info: Si8451DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si8451DB
Contextual Info: SPICE Device Model Si8451DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si8451DB
Abstract: Si8451DB-T2-E1
Contextual Info: Si8451DB Vishay Siliconix P-Channel 1.5-V Rated MOSFET FEATURES PRODUCT SUMMARY VDS V - 20 RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.8 0.100 at VGS = - 2.5 V - 9.7 0.126 at VGS = - 1.8 V - 3.0 0.200 at VGS = - 1.5 V - 1.2 Qg (Typ.) • TrenchFET Power MOSFET
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Si8451DB
Abstract: Si8451DB-T2-E1
Contextual Info: Si8451DB Vishay Siliconix P-Channel 1.5-V Rated MOSFET FEATURES PRODUCT SUMMARY VDS V - 20 rDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.8 0.100 at VGS = - 2.5 V - 9.7 0.126 at VGS = - 1.8 V - 3.0 0.200 at VGS = - 1.5 V - 1.2 Qg (Typ) • TrenchFET Power MOSFET
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SiB431EDK
Contextual Info: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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SC-89-6
Abstract: SiB914
Contextual Info: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry
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