SIB414DK Search Results

31117

Abstract: AN609 M/LM 31117
Contextual Info: SiB414DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SC-75

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

s71571

Contextual Info: SPICE Device Model SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SC75

Abstract: S-71201-Rev SIB414DK-T1-E3
Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • TrenchFET Power MOSFET

SiB414DK

Contextual Info: SPICE Device Model SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

SC-75

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • TrenchFET Power MOSFET

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

SC-75

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

LCD Iphone 3G

Abstract: cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g
Contextual Info: Industry News: Breaking News in the Industry and around the World MEMORY Interfaces WIRELESS COMMUNICATIONS: Ultra-wideband CONSUMER ELECTRONICS: HANDHELD GAMING DEVICES PORTABLE POWER: PARTITIONING for POWER Featured Product: Texas Instruments TMS320DM355

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

SiB431EDK

Contextual Info: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

SC-89-6

Abstract: SiB914
Contextual Info: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT