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    AN609

    Abstract: 25803 12679
    Contextual Info: Si7166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si7166dpan60919-dec-0725803+112679 PDF

    s8059

    Abstract: Si7166DP si7166
    Contextual Info: SPICE Device Model Si7166DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si7166dp18-jul-08s8059si7166 PDF