SI8417DB Search Results

4614 mosfet

Abstract: 60241 C diode 1334 MOSFET 4614 AN609 Si8417DB 18243 68338
Contextual Info: Si8417DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74135

Abstract: data sheet 74135 Si8417DB
Contextual Info: SPICE Device Model Si8417DB Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si8417DB Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.021 at VGS = - 4.5 V - 14.5 0.026 at VGS = - 2.5 V - 13.0 0.033 at VGS = - 1.8 V - 11.5 Qg (Typ.) 35 nC MICRO FOOT Bump Side View Backside View

Contextual Info: Si8417DB New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY –12 FEATURES rDS(on) (W) ID (A)a 0.021 @ VGS = –4.5 V –14.5 0.026 @ VGS = –2.5 V –13.0 0.033 @ VGS = –1.8 V –11.5 VDS (V) Qg (Typ) 35 nC D TrenchFETr Power MOSFET

si8417

Abstract: smd diode marking 1P 467 71990 DG3000
Contextual Info: Si8417DB Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.021 at VGS = - 4.5 V - 14.5 0.026 at VGS = - 2.5 V - 13.0 0.033 at VGS = - 1.8 V - 11.5 Qg (Typ.) 35 nC MICRO FOOT Bump Side View Backside View

Si8417DB

Contextual Info: Si8417DB Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 14.5 0.026 at VGS = - 2.5 V - 13.0 0.033 at VGS = - 1.8 V - 11.5 Qg (Typ.) 35 nC • TrenchFET Power MOSFET • Ultra Small MICRO FOOT® Chipscale

Si8417DB

Abstract: si8417
Contextual Info: Si8417DB New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY –12 FEATURES rDS(on) (W) ID (A)a 0.021 @ VGS = –4.5 V –14.5 0.026 @ VGS = –2.5 V –13.0 0.033 @ VGS = –1.8 V –11.5 VDS (V) Qg (Typ) 35 nC D TrenchFETr Power MOSFET

74135

Abstract: Si8417DB
Contextual Info: SPICE Device Model Si8417DB Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si8417DB Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.021 at VGS = - 4.5 V - 14.5 0.026 at VGS = - 2.5 V - 13.0 0.033 at VGS = - 1.8 V - 11.5 Qg (Typ.) 35 nC MICRO FOOT Bump Side View Backside View

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no