18JAN1 Search Results

hssdc

Abstract: hssdc2
Contextual Info: 107-68442 Packaging Specification 18Jan10 Rev G REC ASSY, HSSDC II CONN. 1. PURPOSE 目的 Define the packaging specifiction and packaging method of REC ASSY, HSSDC II CONN. 订定 REC ASSY, HSSDC II CONN. 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 00 4 2 4 RELEASED FOR PUBLICATION 14JAN ,2 0 0 4 - R E V IS IO N S ALL RIGHTS RESERVED. By - E P LTR DESCRIPTION c C1 D C2 DATE DWN APVD E C R —0 6 —0 2 1 0 3 0 22SEP06 AM FWK REVISED PER ECO-10-000444 18JAN10

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. COPYRIGHT DW BY TYCO ELECTRONICS CORPORATION. - R E V IS IO N S DE SC R IPTIO N LTR A' POSITION REVI SED PER DWN DATE KK HMR 18JAN10 E C O - 10 - 0 0 0 4 4 4

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - 2 - LOC ALL RIGHTS RESERVED. R E V IS IO N S CE 6 DESCRIPTION B WARRANTY LABEL JS 18JAN1' REVISE PER ECO-1 1-001205 JS D D PLUNGER & GROMMET MATERIAL: PLASTIC

GR 1816

Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - R E V IS IO N S RESERVED. C O R P O R A T IO N . D E S C R IP T IO N PER 04NOV03 JR GP KK HMR 18JAN10

traytray

Abstract: INNER CARTON LABEL
Contextual Info: 107-68135 Packaging 18Jan10 Rev D Specification M III SOCKET VERTICAL 90P DIP TYPE DIMM SOCKET 1. PURPOSE 目的 Define the packaging specifiction and packaging method of M III SOCKET VERTICAL 90P DIP TYPE (DIMM SOCKET) product. 订定 M III SOCKET VERTICAL 90P DIP TYPE (DIMM SOCKET) 产品之包装规格及包装方式。

STR 456

Abstract: 1600626-X 1600616 1600616-X 1-292499-1 HDR 2x10
Contextual Info: 107-68703 Packaging Specification 18Jan10 Rev S MBXL HSG 1. PURPOSE 目的 Define the packaging specifiction and packaging method of MBXL HSG. 订定 MBXL HSG 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 PKG TYPE Part Number Description

usb plug

Abstract: "USB plug" MR500
Contextual Info: 107-68891 Packaging Specification 18Jan10 Rev B INDUSTRIAL USB PLUG KIT 1. PURPOSE 目的 Define the packaging specifiction and packaging method of INDUSTRIAL USB PLUG KIT. 订定 INDUSTRIAL USB PLUG KIT 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

Si1303DL-T1-gE3

Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

SI7143DP-T1-GE3

Abstract: Si7143DP si7143
Contextual Info: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

IRF9640S

Abstract: IRF9640 SiHF9640S SiHF9640S-E3 IRF9640STRRPBF
Contextual Info: IRF9640S, SiHF9640S, IRF9640L, SiHF9640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single G G G D S Surface Mount Available in Tape and Reel

65750

Contextual Info: SPICE Device Model SiB455EDK Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

sud50n04-8m8p

Abstract: SUD50N04-8m8P-4GE3 diode 50A
Contextual Info: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

MT6000

Abstract: ASTM-D2671
Contextual Info: Altera MT6000 Flexible, High Expansion Ratio, Modified Polyolefin, Heat - Shrinkable Tubing This specification covers the requirements for one type of single wall, electrical insulating, extruded tubing whose diameter will reduce to a predetermined size upon application of heat in excess of 110°C

Contextual Info: THIS DRAWING IS UNPUBLISHED. 10# COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 3 4 2 - ALL INTERNATIONAL RIGHTS RESERVED. 2 .3 9 + 0 .0 8 2 PLC LOC DIST GP 00 R E V IS IO N S CONTACT: 0 . 0 0 0 7 6 GOLD AT INTERLACE. 0 . 0 0 2 5 4 MIN T IN - L E A D

Si2300DS

Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

F MARKING 6PIN

Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET