SI4650DY Search Results

Contextual Info: Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

74686

Abstract: mosfet 4423 AN609
Contextual Info: Si4650DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: SPICE Device Model Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4650DY-T1-E3

Contextual Info: New Product Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 30 Channel-2 ID (A)a, e Qg (Typ) rDS(on) (Ω)

si4650

Abstract: Si4650DY-T1-E3 Si4650DY-T1-GE3 SI4650DY
Contextual Info: Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Si4650DY-T1-E3

Contextual Info: New Product Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 30 Channel-2 ID (A)a, e Qg (Typ) rDS(on) (Ω)

SI4650DY

Contextual Info: New Product Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 30 Channel-2 ID (A)a, e Qg (Typ) rDS(on) (Ω)

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

vishay power pak SO-8 package height

Abstract: si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8
Contextual Info: Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no