MAY02 Search Results

ST72262G2

Abstract: universal AC Motor soft start ST72260G ST72260G1 ST72262G ST72262G1 ST72264G ST72264G1 SDIP32 DIODE 044 1334 smd
Contextual Info: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES PRODUCT PREVIEW • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP)

77MHZ

Abstract: BB844
Contextual Info: BB844 3 Silicon Variable Capacitance Diode Preliminary data
For FM radio tuner with extended frequency band 77MHz to 108MHz 2
Designed for application requiring back-to-back diode configuration for optimum signal distortion 1 and detuning VPS05161
High tuning ratio low supply voltage car radio

878181-2

Abstract: 108-18013 927774-6 CuSn4 927773-1
Contextual Info: 6 7 2 LOC FREI FUER VERÖFFENTLIC HUNG BY TYCO ELECTRONICS CORPORATION COPYRIGHT 3 RELEASED FOR PUBLICATION I U l1- ' . ' I" ' I ~ I R I -LRX&AJ.ILICI IC l . i f l V b k U r r L N l L l L H IC. J CICI IT MullXtj_

MGFC42V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically sealed metal-ceramic

hypot

Contextual Info: 1 . Mechanical Dimensions: 2. Schematic: C hi p 3 o 0.030 Typ 0.098- 10 -0.490 Max- r I o un un XFADSL21 YYWW o 5= CL X Line Ü I— O O o o o 5o -o 2 6 o- -0 9 4 o 8 O- <3 10 o Í Tape 0.550 Max 3. -0.020 Typ Electrical OCL: Pins Leakage L: Specifications:

622080

Contextual Info: VCC6-Q Series 3.3 volt LVPECL Crystal Oscillator, Output Frequencies > 270MHz Features • 3.3V LVPECL • Output frequencies from 270 to 800 MHz • Enable/Disable for test and board debug • -10/70 or –40/85 °C operating temperature • Hermetically sealed ceramic SMD package

Contextual Info: BBY59-02V Silicon Tuning Diode Preliminary data 2
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation for VCO' s in mobile communications equipment 1
For control elements such as TCXOS and VCXOS VES05991
High capacitance ratio and good C-V linearity

lv 02a

Contextual Info: 1. M echanical D im ensions: 2. Schem atic: 1 o- 0.34-5 Max D 0.100 -i 8 — I ^ 0 .0 5 0 r f i a s » o N d XFMRS XF0406 • YYWW r-D □ □ s 3. Electrical Ò Specifications: OCL: 4.2mH Min @100k,0.1v (each wdg L o i-" o DCR: 1.8 Ohms max (each wdq)

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY685A 600 MHz, 18.2 dB gain push-pull amplifier Product specification Supersedes data of 1998 Mar 16 2001 Oct 22 Philips Semiconductors Product specification 600 MHz, 18.2 dB gain push-pull amplifier

g1 TRANSISTOR SMD MARKING CODE

Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs

Contextual Info: Alio Dechlt nrbehollto/ i l l rig ils resected 5 1 3 U R0, 5 Detail. Insp. Stand. 31050 3 1 -MAY-02 CV Hod. Dol. Nom Ool. u -NOflE 3 1 -MAY-02 CV D-Sub stra in re lie f All Dia. io an Or ig. Size DIN A HARTING ELEKTRONIK F - 95972 P a r i s 9 TB Sub. poles

NCP1204

Abstract: bipolar power transistor data NCP4000 SO32W NCP1450 dual zener common anode NCP801 DC-DC Step-Up Converter for White LED TSOP RECEIVER MOSFET P-CH 250V 5A
Contextual Info: Rev. 9, 2Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers Device CS5323 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. Gate Drive External On-chip Compliance VRM 9.0 VRM 9.0 Package SO-20W SO-28W Availability NOW May-02

SC75A375B-A

Abstract: Faraday Technology cable clone
Contextual Info: 4 SWITCH CABLE CLONE SIMULATES THE EFFECT OF COAXIAL CABLE IN SERIAL DIGITAL SYSTEMS • • • • • • • Emulates cable up to 360 MHz Simulates more than 300 metres Fixed and Switched Programmable Known accurate loss for repeatable performance Order Code

CST-100

Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 EIA-364-8
Contextual Info: Product Specification 108-1948 27Oct09 Rev B All Paragraphs Revised CST-100 Type II .100 Inch Centerline Crimp-Snap Connectors 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for Tyco Electronics CST-100 Type II .100 Inch Centerline Crimp-Snap Connectors. The CST-100 Type II product is a wire-to-board

Contextual Info: 7 8 TH 5 DRAWING C O PY R IG H T IS 19 UNPUBL SHED. RELEA5ED BY AMP IN CO RP O RA TE D. ALL FOR PUBLICATION R IG H T S 6 ,19 R ES ER V ED . •SEE DETAIL A D C Q B A , 21-MAY 3-D I MENS I O N A L NTS AMP ■02 4805 REV 11:31:51 10/93 amp 1 S S B E ^ h o m e / a i n p l 9 5 3 8 / d m m o d

schematic diagram tv sony kv 21

Abstract: tda7474 mp3 player schematic diagram Diode marking CODE R1K circuit diagram for sony tv 4 kv FM MODULATOR mp3 with usb pll fm modulator mp3 schematic diagram ac 220v voltage regulator ST72651 transistor marking 113
Contextual Info: ST7265x LOW-POWER, FULL-SPEED USB 8-BIT MCU WITH 32K FLASH, 5K RAM, FLASH CARD I/F, TIMER, PWM, ADC, I2C, SPI PRELIMINARY DATA Memories – Up to 32K of ROM or High Density Flash HDFlash program memory with read/write protection – For HDFlash devices, In-Application Programming (IAP) via USB and In-Circuit programming (ICP)

smd FFs

Abstract: ZBBMD56W
Contextual Info: SUNLED CORPORATION 20793 E. VALLEY BLVD. #C SUNLED WALNUT.CA.91789, U.S.A. E-MAIL : sales@sunled.com URL ADDRESS : http://www.sunled.com ZBBMD56W 3.0X1.Omm 1104 RIGHT ANGLE BI-COLOR SMD CHIP LED 0.3510.014] ¿[0.079] BLUE ° < RED POLARITY MARK 0.810.0321

Contextual Info: DO NOT SCALE DIMENSIONS IN THIRD ANGLE M E T R IC mm PROJECTION 9 ,6 a SECTION -3 ,7 SECTION A -A A -A REF. -4 ,1 2 5 A REF. 4 x 2 ,0 = 8 ,0 •1 2 , 2 5 - -2 4 ,9 5 -21 , 9 iw i iw i ¿ i m r a rw i S S I IHÖ IHÖ IM I [M HHBß B B H 1 1 ,4 rw i r a IW I

MGFC42V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically sealed metal-ceramic

r778

Abstract: d408
Contextual Info: RMKD Vishay Thin Film Hermetic, Dual-In-Line Resistor Networks FEATURES • High Stability: < 300ppm Max., 2000 hrs., Pn + 70°C • Hermetic Cases: Dual-In-Line and TO99 TYPICAL PERFORMANCE THROUGH HOLE Actual Size The superstable RMK nickel-chromium integrated networks

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY785A 750 MHz, 18.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain push-pull amplifier

smd DIODE code marking 20A

Abstract: KB201 diode rectifier
Contextual Info: PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes Rev. 05 — 20 January 2003 Product data 1. Product profile 1.1 Description Dual, common cathode schottky rectifier diodes in two conventional leaded plastic packages and one surface mount plastic package.

transistor 9567

Abstract: transistor J128 philips catalog potentiometer 72741 MDA480 MOS marking 843 D 843 Power Transistor MDA483 transistor K 1413
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage