1850M Search Results

FPD1500SOT89

Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
Contextual Info: FPD1500SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant

SSG 23 TRANSISTOR

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)

FPD6836SOT343

Abstract: FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423
Contextual Info: FPD6836SOT343 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • 0.5 dB Noise Figure at 25% Bias 19 dBm Output Power (P1dB) 19 dB Small-Signal Gain (SSG) 32 dBm Output IP3 at 50% Bias RoHS compliant (Directive 2002/95/EC)

FPD1500SOT89

Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370
Contextual Info: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant

transistor bc 564

Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

Contextual Info: Datasheet UN06B02 UMTS Band 2/25 CDMA2000 BC1/14 Power Amplifier IC 1850MHz to 1915MHz Applications Features • WCDMA handset ■ HSDPA ■ High efficiency operation 47% @ 28.5dBm ■ HSUPA ■ LTE ■ Small, low profile LGA package 3mm x 3mm x 0.85mm (1mm Max)

HR-3U

Abstract: HR-3U 1850 370mA sanyo HR-3U
Contextual Info: Cell Type HR-3U Specifications Type : Nickel-Metal Hydride Battery Capacity Size : AA Consumer Type Typical 1850mAh Minimum 1750mAh 1 14.2 mm Nominal Voltage 1.2V Charging Current x Time Charge Condition Fast Charge 2) 1850 mA x about 1.1h Fast Charge 2)

high power transistor s-parameters

Contextual Info: FPD750SOT343 Datasheet v2.2 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES 1850MHZ : • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)

IBM REV 2.8

Abstract: rev 1.5 ibm ibm rev 1.5
Contextual Info: IBM 43RF4111 IBM 43RF4111EV Silicon-Germ anium 3-V PCS-Band: GSM Tri-Band VCO Advance Features • 880M H z/1850M H z center frequency for GSM Tri-Band • Flexible design w ith m ultiband VC O output • E fficiency and pow er m anagem ent, ideal for b attery m obile design

Contextual Info: Control No. Tentative Specification Preliminary : ARP-481500 C Established on Aug 20, 2013 1. 1850MHz Band 90deg Chip Hybrid Coupler TYPE No: HMD815D RoHS correspondence article 2. Appearance and Construction 2.1 Dimension (Unit: mm) 1.25 +/- 0.2 d G G e

MW500-1084

Contextual Info: Voltage Controlled Oscillators MW500-1084 1850MHz to 2000MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1850MHz to 2000MHz 0.5/8 V 7 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -98 typ dBc/Hz

c124

Abstract: C1242 C124-2 0603 1940 C-124
Contextual Info: STB7003 TRI-BAND GSM/DCS/PCS LNA PRELIMINARY DATA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING

GSM1900

Abstract: GSM1800
Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard specification System GSM1800/GSM1900 Rx 50/150ohms Date FAR-G6QC-1G9600-N2FA Version 1.0aa Part Number March 31, 2010 - Table 1.Electrical specifications(Filter 1) Pass Band (1805-1850MHz) Item Condition

FPD750SOT343E

Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201
Contextual Info: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRL3225T2R2M Features Item Summary 2.2 H(±20%), 1850mA, 1600mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

FILTRONIC CROSS REFERENCE

Abstract: SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant

SSG 23 TRANSISTOR

Abstract: 1P503 FPM2750QFN Filtronic Components
Contextual Info: FPM2750QFN Datasheet v2.5 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE PACKAGE: FEATURES: • • • • • • • Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Combined IP3: 36dBm (100mA)

FPD750

Abstract: SSG 23 TRANSISTOR Filtronic Components FPM2750QFN 1P503 SSG TRANSISTOR Filtronic Compound Semiconductors 36347
Contextual Info: FPM2750QFN Preliminary Datasheet v2.4 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE FEATURES: • • • • • • • PACKAGE: Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Output IP3: 32dBm (40mA); 36dBm (100)

Contextual Info: JXWBLB-S-BP-1710-1990-CE-5 1850MHz Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-S-BP-1710-1990-CE-5 1 JXWBLB-S-BP-1710-1990-CE-5 1850MHz Band Pass Filter Technical Specification 1850 Centre Frequency[f0] MHz Bandwidth[BW] f0±140

Contextual Info: Datasheet UN06B01 UMTS Band 1 CDMA2000 BC6 Power Amplifier IC UMTS Band 2/25 CDMA2000 BC1/14 Power Amplifier IC 1850MHz to 1980MHz Applications Features • WCDMA handset ■ HSDPA ■ HSUPA ■ LTE ■ High efficiency operation 48% @ 28.25dBm ■ Small, low profile LGA package

SW SPDT

Abstract: C128 STB7003 C124 kit C124-2 c1281
Contextual Info: STB7003 TRI-BAND GSM/DCS/PCS LNA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING 7003 APPLICATIONS

LA1018

Contextual Info: RFLA1018 RFLA1018Variable Gain Low Noise High Linearity Amplifier VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER Frequency Range 1850MHz to 2050MHz GND 2 Internally Matched to 50 on All RF Ports SCN 3 Analog Voltage Variable Attenuator with 3.3V Control

stepper

Abstract: TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750DFN FPD750SOT89 MIL-HDBK-263
Contextual Info: FPD750DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency

FPD1500SOT89

Abstract: FPD1500SOT89E 09DB FPD1500SOT89CE
Contextual Info: FPD1500SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant