181NQ035 Search Results

Contextual Info: 181NQ035 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current180 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage35 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.22k V(FM) Max.(V) Forward Voltage.8 @I(FM) (A) (Test Condition)360

MBR20030CTL

Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
Contextual Info: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

203CNQ100

Abstract: 122NQ030R MBR1535 21FQ040 121NQ035 189NQ
Contextual Info: Schottky Diodes www.irf.com Part Number V RRM V I FAV @TC (A) (C) VFM @I FM I RM @VRWM E AS I AR 25°C 25°C (mA) (mA) (mJ) (A) Max T J (°C) Fax on Demand Number Case Outline Key Surface-Mount Packages SMB 10BQ100 100 1 152 0.78 10BQ015 15 10BQ040 40 10BQ060

181NQ

Abstract: 181NQ035 181NQ040 181NQ045 40HFL40S02 IRFP460
Contextual Info: PD-2.293 rev. A 12/97 181NQ. SERIES SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF @ 180Apk, TJ=125°C TJ range Description/Features 181NQ. Units 180 A 35 to 45

181NQ035

Abstract: 181NQ040 181NQ045 HS18135 HS18140 HS18145
Contextual Info: 180 Amp Schottky Rectifier HS1 81 3 5 —HS1 81 45 Dim. Inches M illim eter Minimum Maximum Minimum 1.52 .725 .605 1.182 .745 .152 38.61 1.56 18.42 .775 15.37 .625 30.02 1.192 18.92 .755 3.86 .160 1 /4 -2 0 UNC-2B 13.84 .580 3.96 .160 12.57 .505 3.05 .130

D382

Abstract: las36 d383
Contextual Info: PD-2.293 International Iî r| Rectifier i8 in q . s e r ie s SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Description/Features Characteristics 181N Q . Units Ip AV Rectangular waveform 180 A VRRM 35 to 45 V lFSM @ tp-5pssine 22,000 A

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

smb 440a

Abstract: 81CNQ050 100V 25A schottky 168CMQ060 60L30CT 201CNQ050 TO244AB 60hq100 diode 35v 10a 241NQ045
Contextual Info: Surface Mount Schottky Navigator Current Voltage illustrations not to scale 15V 15V 15V 15V 15V 15V 1A 3A 19A 40A 60A 80A 20V 20V 20V 20V 20V 20V 20V 20V 20V 1A 2A 5A 6A 12A 3A 40A 60A 80A 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 1A 2A 3A 5A 6A 12A 30A 40A

181NQ

Abstract: 181NQ030 181NQ035 181NQ040 181NQ045 181NQ045R IRFP460
Contextual Info: Bulletin PD-2.293 rev. B 05/02 181NQ. R SERIES SCHOTTKY RECTIFIER 180 Amp D-67 Description/ Features Major Ratings and Characteristics Characteristics 181NQ. Units IF(AV) Rectangular 180 A VRRM range 30 to 45 V IFSM @ tp = 5 µs sine 22,000 A 0.56 V - 55 to 175

MBR140P

Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
Contextual Info: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT

181NQ035

Abstract: 181NQ040 181NQ045 HS18135 HS18140 HS18145
Contextual Info: 180 Amp Schottky Rectifier HS18135-HS18145 D G J B K H Dim. Inches Std. Polarity Base is cathode Rev. Polarity Base is anode F Microsemi Catalog Number 1.52 .725 .605 1.182 .745 .152 A B C D E F G H J K L C E A .545 .156 .495 .120 38.61 1.56 18.42 .775 15.37

BTQ100

Abstract: BTQ080 25CT0040 ir 80sQ045 MBR745 ir 50sq080 RC145 c1161 444CNQ 10MQ090
Contextual Info: Schottky Rectifiers Products From IR Surface Mount •F AV @ Tc Part Number 10MQ040 10MQ060 10MQ090 VRRM 00 40 60 90 (A) <°c> 1.1 0.77 0.77 92 110 110 0.51 0.57 0.65 - - 50 7.5 5.0 - - 50 15MQ040 40 1.7 - 0.55 30WQ03F 30WQ04F 30WQ05F 30WQ06F 30WQ09F 30WQ10F

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

Contextual Info: 180 Amp Schottky Rectifier HS18135-HS18145 D G Dim. Inches J K H Minimum Maximum Minimum Maximum Notes Std. Polarity Base is cathode Rev. Polarity Base is anode B F Microsemi Catalog Number 1.52 .725 .605 1.182 .745 .152 A B C D E F G H J K L C E A .525 .156

100C

Abstract: 181NQ035 181NQ040 181NQ045 HS18135 HS18140 HS18145
Contextual Info: 180 Amp Schottky Rectifier HS1 81 3 5 —HS1 81 45 Dim. Inches M illim eter Minimum Maximum Minimum 1.52 .725 .605 1.182 .745 .152 1.56 38.61 18.42 .775 15.37 .625 1.192 30.02 18.92 .755 3.86 .160 1 /4 -2 0 UNC-2B 13.84 .580 3.96 .160 12.57 .505 3.05 .130

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

mbrf1060ctl

Contextual Info: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1

245NQ015R

Abstract: 242NQ030R
Contextual Info: n I n t e r n a t io n a l R e c t i f i e r Schottky Diodes P 1 ! Put Number *F AV) • Te A X (Vote) (2) Cas ird P)lRMO (3) 1AR R*»dVRWM p*r«g mA •c/w (Amp») Mu. Tj •c M-.-now Fm-onOMund Number ni Modukt Discrete 120NQ035 120NQ040 120NQ045 120NQ045R