17N80C3 MOSFET Search Results

17N80C3 MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
ICL7667MJA/883B		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA)	PDF
AM9513ADIB		Rochester Electronics LLC	AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40	PDF
CA3130T		Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF
CA3130AT/B		Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF

17N80C3 MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
17n80c3 Contextual Info: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP17N80C3 PG-TO220-3 17N80C3 17n80c3	PDF
17n80c3 Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 17n80c3	PDF
MOSFET 17N80c3 Abstract: 17n80 Contextual Info: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17n80	PDF
MOSFET 17N80c3 Abstract: smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47 Contextual Info: SPB17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47	PDF
Contextual Info: SPB17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPB17N80C3 PG-TO263 17N80C3	PDF
MOSFET 17N80c3 Abstract: 17n80c3 17n80c 17n80 JESD22 SPW17N80C3 Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 17n80c3 17n80c 17n80 JESD22 SPW17N80C3	PDF
MOSFET 17N80c3 Abstract: Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c	PDF
MOSFET 17N80c3 Abstract: 17N80C3 mosfet 800 v JESD22 PG-TO220-3 SPP17N80C3 17n80 Contextual Info: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17N80C3 mosfet 800 v JESD22 PG-TO220-3 SPP17N80C3 17n80	PDF
MOSFET 17N80c3 Abstract: 17n80 17n80c 17n80c3 SPB17N80C3 smd transistor marking d10 JESD22 smd G47 Contextual Info: SPB17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 17n80 17n80c 17n80c3 SPB17N80C3 smd transistor marking d10 JESD22 smd G47	PDF
MOSFET 17N80c3 Abstract: 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PG-TO247-3 Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 009-134-A O-247 PG-TO247-3 MOSFET 17N80c3 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80	PDF
MOSFET 17N80c3 Abstract: MOSFET 17N80c3 Data sheet Diode S17 Contextual Info: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 009-134-A O-247 PG-TO247-3 MOSFET 17N80c3 MOSFET 17N80c3 Data sheet Diode S17	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF