17MAY04 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 —»— RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST AJ REVISIONS LTR D DESCRIPTION DATE REV PER OS14 - 0 2 2 8 - 0 4 OWN APVD KW KW 17MAY04 D D C 1363106 .100 [2 .54 ]

Contextual Info: SPECIFICATION FOR COTCO LED LAMP MODEL No : DOC. No : LC503QBG1-15H-MT A 17May04 Description: 15 Degree 5mm Round LED Lamp in Bluish Green Color with Water Transparent Lens and No Stopper *This specification is only for Marktech Dice Material: InGaN Confirmed

Marking Code JB

Abstract: SI5855DC-T1 SI5855DC-T1-E3 Si5855DC Si5853DC
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky

s40501

Abstract: S-40501
Contextual Info: Tape Information Vishay Siliconix 1206-8 ChipFETR O1.5 + 0.1/−0.0 B B 4.0 See Note 1 A 2.0 " 0.05 See Note 4 1.75 3.5 " 0.05 See Note 4 8.0 " 0.3 4.0 Section A-A O1.0 min A Section B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm. 2. Camber not to exceed 1 mm in 100 mm.

93-5227-1

Abstract: 71938 MLP33-6 40510 VISHAY MLP33
Contextual Info: Tape Information Vishay Siliconix MLP33-6, 8, and 10 PowerPAKr MLP33-6, 8 and 10 4.00 " 0.10 A SEE NOTE 1 1.75 " 0.0 ∅1.5 + 0.1/−0.0 2.0 " 0.05 3.50 " 0.05 SEE NOTE 4 8.00 0.30/−0.10 SEE NOTE 4 B0 R0.3 MAX ∅1.0 MIN A 4.00 " 0.10 NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm.

Contextual Info: TEMT3700 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. Due to its waterclear epoxy lens the device is sensitive to visible

CQC03001004372

Abstract: CQC04001009253 CSA-C22 E109565 E112471 EN132400 mkp 1.27 mkp x2 300 v CQC04001009254 MKP 12
Contextual Info: MKP 336 2 X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type APPLICATIONS 168x12 halfpage w l X2 class REFERENCE STANDARDS “IEC 60384-14 2nd edition and EN 132400” “IEC 60065, pass. flamm. class B” 250 V: CSA-C22.2 No 1; UL1414

mosfet marking jb

Abstract: Marking Code JB
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky

Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)

marking 1821

Contextual Info: Si91821 Vishay Siliconix Micropower 300-mA CMOS LDO Regulator With Error Flag FEATURES D Input Voltage: 2.35−6.0 V D Fixed 1.5-V, 1.8-V, 2.0-V, 2.5-V, 2.775-V, 2.8-V, 3.0-V, 3.3-V, 5.0-V, or Adjustable Output Voltage Options D Low 120-mV Dropout at 300-mA Load

Contextual Info: Si91821 Vishay Siliconix Micropower 300-mA CMOS LDO Regulator With Error Flag FEATURES D Input Voltage: 2.35−6.0 V D Fixed 1.5-V, 1.8-V, 2.0-V, 2.5-V, 2.775-V, 2.8-V, 3.0-V, 3.3-V, 5.0-V, or Adjustable Output Voltage Options D Low 120-mV Dropout at 300-mA Load

DG3535

Contextual Info: DG3535/DG3536 Vishay Siliconix New Product 0.25-W Low-Voltage Dual SPDT Analog Switch FEATURES D D D D D BENEFITS Low Voltage Operation Low On-Resistance - rON: 0.25 W @ 2.7 V −69 dB OIRR @ 2.7 V, 100 kHz MICRO FOOTr Package ESD Protection >2000 V D D D

h2 marking

Abstract: H1 MARKING CODE VISHAY .H2 MARKING
Contextual Info: BCW69 / BCW70 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • • • • PNP Silicon Epitaxial Planar Transistors Suited for low level, general purpose applications. Low current, low voltage. As complementary types, BCW71 and BCW72

BZX584C10-02V

Abstract: BZX58 bzx584c3v002v BZX584C5V1-02V BZX584C2V4-02V BZX584C3V3-02V BZX584C6V2-02V bzx584c15 BZX584C
Contextual Info: BZX584C-02V Series VISHAY Vishay Semiconductors Small Signal Zener Diodes Features • With the BZX584C.-02V series vishay offers a Z-Diode in the tiny SOD-523 plastic package. Made for space sensitive applications the BZX584C.-02V series has a zener voltage tolerance of ± 5 %. Other voltage tolerances are available on request.

Si4884DY

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS

Si4874DY

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS

93-5216-1

Abstract: 71242 40728
Contextual Info: Tape Information Vishay Siliconix MSOP: 8-LEADS 4.0"0.1 Typ See Note 1 2.00"0.05 Typ See Note 4 +0.1 O1.5 −0.0 Typ 1.75"0.1 A 5.5"0.05 See Note 4 12.0"0.3 R0.5 Min 8.0 O1.5 Min Section A−A A NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2. 2.

SI4433DY-T1

Abstract: Si4433DY
Contextual Info: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.9 0.160 @ VGS = −2.5 V −3.2 0.240 @ VGS = −1.8 V −2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested

Si4884DY

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS

Contextual Info: Si9174 Vishay Siliconix High Performance Step-Down DC-DC Converter With Dynamically Adjustable Output Voltage D Synchronizable to13-MHz Clock D User Selectable PWM, PSM, or AUTO Mode D PSM Frequency w20 kHz for Inaudible Harmonics FEATURES D D D D D D D D

SUD50N04

Contextual Info: SUD50N04-06H New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 40 0.006 @ VGS = 10 V ID D TrenchFETr Power MOSFETS D 175_C Junction Temperature (A)c APPLICATIONS 109 D Automotive Such As: − High-Side Switch

Contextual Info: Si91822 Vishay Siliconix Micropower 300-mA CMOS LDO Regulator With Error Flag/Power-On-Reset FEATURES Low 150-mV Dropout at 300-mA Load Guaranteed 300-mA Output Current 600-mA Peak Output Current Capability Uses Low ESR Ceramic Output Capacitor Fast Load and Line Transient Response

Si4894DY

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4894DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application

BA20-BA31

Abstract: AT75C AT75C221 PA11 PA12 PA19 atmel ice
Contextual Info: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 40 MHz Operation • 16-bit Fixed-point OakDSPCore® • • • • • • • • • • • – Up to 60 MHz Operations – 104K bytes of Integrated Fast RAM, Codec Interface