17JAN05 Search Results

21EN9-6

Abstract: MS25081C6 MICRO SWITCH FREEPORT. ILL. U.S.A FAA-PMA MS25081-c6 MS25081 ms25 MIL-S-8805 010of
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV DOCUMENT 22 0010575 21EN9-6 C H A N G E D BY KR CHECK 17JAN05 AK FAA-PMA ROLLER GUIDE MAY BE LOCKED IN INCREMENTS OF 4 5 ° AZIMUTH. IT MAY ALSO BE UNSCREWED AND REMOVED FROM BUSHING TO FACILITATE INSTALLATION /5\

Si5401DC

Contextual Info: Si5401DC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −7.1 0.040 @ VGS = −2.5 V −6.4 0.053 @ VGS = −1.8 V −5.5 D D D D Qg (Typ) TrenchFETr Power MOSFET Ultra-Low On-Resistance

Marking 4001 Vishay

Contextual Info: RCK HR 02, 02A Vishay Sfernice Very High Precision, Very High Stability, High Reliability Resistors, Bulk Metal Foil FEATURES Four variants are available, two reliability levels are proposed: • Level B for serialized components • Level C without serialization

293D

Contextual Info: 293D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Commercial, Surface Mount FEATURES • Molded case available in six case codes. • Compatible with "High Volume" automatic pick and place equipment. • Optical character recognition qualified.

8402 MOSFET

Abstract: 8402 silicon diode J-STD-020A Si8402DB Si8402DB-T1
Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Si4856a

Abstract: Si4856ADY Si4856ADY-T1
Contextual Info: Si4856ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 17 0.0076 @ VGS = 4.5 V 14 Qg (Typ) APPLICATIONS D Buck Converter D Synchronous Rectifier

8902E

Abstract: J-STD-020A Si8902EDB
Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET

Contextual Info: TFDU6102 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.7 V to 5.5 V Operation Description The TFDU6102 is a low-power infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 4.0 Mbit/s (FIR), and carrier

J-STD-020A

Abstract: Si8413DB
Contextual Info: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.048 @ VGS = −4.5 V −6.5 0.063 @ VGS = −2.5 V −5.7 Qg (Typ) 14 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

si4856ady

Contextual Info: Si4856ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 17 0.0076 @ VGS = 4.5 V 14 Qg (Typ) APPLICATIONS D Buck Converter D Synchronous Rectifier

Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

si4856A

Contextual Info: Si4856ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 17 0.0076 @ VGS = 4.5 V 14 Qg (Typ) APPLICATIONS D Buck Converter D Synchronous Rectifier

Contextual Info: SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.155 @ VGS = −10 V −8.4 0.280 @ VGS = −4.5 V −7.4 Qg (Typ) 12 5 12.5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature

marking code 82J

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT N/A RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - , N/A LOC ALL RIGHTS RESERVED. REVISIONS DIST DF DO LTR DESCRIPTION C 1. THIS CONNECTOR A S S E M B L Y CLIPS 2. INSTALLED IN THE IS S U P P LIE D

diode 8405

Abstract: J-STD-020A Si8405DB Si8405DB-T1 SI8405DB-T1-E1
Contextual Info: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −4.9 0.070 @ VGS = −2.5 V −4.4 0.090 @ VGS = −1.8 V −4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging

S1 0780

Abstract: 10-BUMP 8900E J-STD-020A Si8900EDB
Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT

Si4565DY

Abstract: SI4565DY-T1-E3
Contextual Info: Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel −40 40 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 5.2 0.045 @ VGS = 4.5 V 4.9 0.054 @ VGS = −10 V −4.5 0.072 @ VGS = −4.5 V

J-STD-020A

Abstract: Si8902EDB
Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET

Contextual Info: TFBS4711 Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation Description The TFBS4711 is a low profile, Infrared Data Transceiver module. It supports IrDA data rates up to 115.2 kbit/s SIR . The transceiver module consists of

Contextual Info: Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel −40 40 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 5.2 0.045 @ VGS = 4.5 V 4.9 0.054 @ VGS = −10 V −4.5 0.072 @ VGS = −4.5 V

Contextual Info: S Vishay Sfernice Current Sensing Bondable Chip Resistors FEATURES • Low ohmic value down to 0.05Ω • Tolerance down to 1% • Stability This thin film chip resistor fits applications as force balance scales, E beam deflection systems, switching power supplies,

SI8901

Abstract: J-STD-020A Si8901EDB
Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET

J-STD-020A

Abstract: Si8904EDB
Contextual Info: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance

Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and