8904E Search Results

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Si8904EDB

Contextual Info: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance

CSL-870

Contextual Info: Device Bright Red H Orange (E) Amber (A) Yellow (Y) Green (G) Package Xp = 695 nm Xp = 635 nm Xp = 610 nm Xp = 590 nm Xp = 570 nm Outline Lamp P/N Lamp P/N Lamp P/N Lamp P/N Lamp P/N C SL-H 8807H 7 C SL-H 8807E7 CSL-H 8807A7 CSL-H 8807Y7 C SL-H 8807G 7 Device

J-STD-020A

Abstract: Si8904EDB
Contextual Info: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance

Contextual Info: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

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Contextual Info: L0,>:F6BC2<0!>@ED03080D-4 L0 ?G6B024D?B0?BB64D650 L0DBB10(62;0(?G6B042@23:<:DI L0D0062B0.2BB2>DI L0$6CC0D92>0B9=062BD90<62;28604EBB6>D *<0&5/*70 *,1*276010440-(&7-326 24D?BI0ED?=2D:?> 1.*8(0*6B:6C +6CD020%62CEB6=6>D CB.0D?0FB.0 *:>8<60'ED@ED0(?G6B0*E@@<:6C

Contextual Info: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance

Contextual Info: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance

S5006

Abstract: J-STD-020A Si8904EDB
Contextual Info: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance

Contextual Info: 8904EDB New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance