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    17400B Search Results

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    Vishay Intertechnologies RCMT0217400BES03

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    Vishay Intertechnologies RCMA0217400BES03

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    Vishay Intertechnologies RCMT0517400BES03

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    Vishay Intertechnologies RCMA0217400BES14

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    Ohmite Mfg Co 14008-L17400BA

    Wirewound Resistors - Through Hole DSCC DRAWING
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    TTI 14008-L17400BA Bulk 250 1
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    17400B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17400B achieves high integration, high-speed operation, and low-power


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    17400b_e2g0035-17-41304-wordmsm5117400b+1/24-pin PDF

    I-7400

    Abstract: tds 8920 c
    Contextual Info: @ LG Semicon. Co. LTD. Features Description The GM71 V S 17400B /B L is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. G M 71V (S)17400B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS


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    gm71v17400b17400b/bl300mil+3402a7s7i-7400tds 8920 c PDF

    Contextual Info: HB56TW433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56TW433D is a 4 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 16Mbit DRAM (HM51W 17400BTS/ BLTS) sealed in TSOP package. An outline of the HB56TW433D is


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    hb56tw433d304-word32-bitade-203rev+416mbithm51w17400bts/72-pin PDF

    MSM5117400

    Abstract: MSM5117400B
    Contextual Info: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17400B achieves high integration, high-speed operation, and low-power


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    e2g0035-17-41msm5117400b_304-wordmsm5117400b+226/24-pinmsm5117400 PDF

    Q67100-Q2006

    Abstract: Q67100-Q982 514100BJ
    Contextual Info: SIEMENS 4M X 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Preliminary Inform ation 4 194 304 words by 36-Bit organization alternative 8 388 608 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access tim e


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    36-bit364020s/gs-60/-7018-bits23sbos+400717b3q67100-q2006q67100-q982514100bj PDF

    Q67100-Q2007

    Abstract: Q67100-Q985
    Contextual Info: SIEM EN S 8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Prelim inary Inform ation • 24 decoupling capacitors mounted on substrate 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit All inputs, outputs and clocks fully


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    36-bit368020s/gs-60/-7018-bitcmos-132+3fl23sbosq67100-q2007q67100-q985 PDF

    Contextual Info: 17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi 17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 17400B offers Fast


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    hm51w17400b304-wordade-203-370amw/360+3mw/324hm51w1740hm51w17400bs/bls PDF

    Contextual Info: ADE-203-370 Z 17400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 23, 1995 HITACHI T he H ita c h i H M 5 1W 17 4 0 0 B /B L is a CM O S dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology


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    ade-203-370hm51w17400b/bl304-word17400b/bl+5300-mil26-pincp-26/24dbmw/360mw/324 PDF

    27C256AG

    Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
    Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series


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    512kx8512k28512a674100h671400h+138128b1664h9127h8127h27c256ag4265c514270101agbk 43674165a51181604270-d4096a PDF

    Contextual Info: • « Y U N O Ä T • 17400B,HY51 V16400B 4Ux4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


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    hy51v17400bv16400b PDF

    Contextual Info: •HYUNDAI HY51 17400B.HY51 V16400B 4M x4, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is


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    hy51v17400bv16400ba0-a11 PDF

    GM71CI7400

    Abstract: 402u gm71c17400bj GM71C17400 17400BJ gm71c17400b
    Contextual Info: @ LG Semicon. Co. LTD Description Features The 17400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. 17400B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The 17400B/BL offers Fast


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    gm71c17400b/blcl7400b/bl300milddd5d42+6gm71ci7400402ugm71c17400bjgm71c1740017400bjgm71c17400b PDF

    bt 33 f

    Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 17400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)


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    3117400bj/btbt 33 f PDF

    Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 17400BJ -50/-60/-70 HYB 17400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version


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    5117400bj5117400bt PDF

    Contextual Info: MEMORY 4 M X 4 BIT. E A S ll^ 17400B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu 17400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The 17400B features a “fast page” mode of operation whereby high­


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    mb81v17400b-50/-60/-50l/-60lmb81v17400bf9712 PDF

    sem 2005 640

    Contextual Info: SIEMENS 4M X 32-Bit Dynamic RAM Module HYM 324020S/GS-60/-70 Prelim inary Inform ation • 4 194 304 w ords by 32-bit organization alternative 8 388 608 words by 16-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time


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    32-bit324020s/gs-60/-7016-bit324020s/g+2324020s/gs-70sem 2005 640 PDF

    Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70


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    1000bj-501000bj-601000bj-701000bjl-50+61000bjl-601000bjl-70514256b-50514256b-60514256b-70514256bj-50 PDF

    Contextual Info: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P


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    b81v16400a-60b81v16400a-706400a-60l1v16400a-70l+6b81v17400a-60b81v17400a-707400a-60lb81v17400a-70l16400b-50mb81v1640qb-60 PDF

    Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 17400BJ -50/-60/-70 HYB 17400BT -50/-60/-70 A d v a n c e d In fo rm a tio n • 4 194 30 4 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % sup ply • 0 to 70 C o p e ra tin g te m p e ra tu re Low p o w e r dissip a tio n


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    5117400bj5117400bt PDF

    Contextual Info: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 17400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 17400BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


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    hyb5116400bj/bt-50/-60hyb5117400bj/bt-50/-60hyb3116400bjhyb3117400bj+6hyb5116400hyb3116400hyb5117400hyb311740012/1amp-soj-26/24 PDF

    51w17400

    Contextual Info: 17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi 17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 17400B offers Fast


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    hm51w17400b304-wordade-203-370amw/360+3mw/32451w17400bs/bls51w17400 PDF

    la6111

    Contextual Info: SIEMENS 8M X 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 P re lim in a ry In fo rm a tio n • 2 4 d e co u p lin g ca p a c ito rs m o u n te d on s u b stra te 8 388 608 w o rd s by 3 6 -b it o rg a n iz a tio n a lte rn a tiv e 16 777 216 w o rd s by 18-bit


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    36-bit368020s/gs-60/-7018-bitla6111 PDF

    HM5117400BS7

    Abstract: HM5117400BS6
    Contextual Info: 17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi 17400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The 17400B offers Fast Page Mode


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    hm5117400b304-wordade-203-369amw/550+4mw/495hm5117400bs/blshm5117400bs7hm5117400bs6 PDF

    26-P3

    Contextual Info: V ' T S V B ’ S '- ” ,tu n i* * * * M 5 M 4 V 1 7 4 0 0 B J J P .R ,R tL ' T S ,- ’. 3 1 s 7 ,-lî, - 6 S ,- Ï'S ,- « S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a fa m ily o f 4 1 9 4 3 0 4 -w o rd b y 4 -b it d yn a m ic R AM s,


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    16777216-bit4194304-word26-p3 PDF