16K X 8 Search Results

3VR10

Abstract: AL5DS9289V AL5DS9389V marking a0l
Contextual Info: AL5DS9xx9V AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V 4K/8K/16K/32K x 18 bits AL5DS9269/79V 16K/32K x 16 bits AL5DS9149/59/69/79/89V 4K/8K/16K/32K/64K x 9 bits AL5DS9069/79/89V 16K/32K/64K x 8 bits Preliminary 2002-Copyright by AverLogic Technologies, Corp.

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords

A12L

Abstract: A13L CY7C006 CY7C016 TSOP 48 memory arbitration scheme C0066
Contextual Info: with Sem, In t, Busy CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True dual-ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)

A12L

Abstract: A13L CY7C006 CY7C016 C0066
Contextual Info: with Sem, In t, Busy CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)

CY7C006

Abstract: CY7C016
Contextual Info: fax id: 5207 1 CY7 C0 16 CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)

SEM 2005 16 PINS

Abstract: sem 2005 CYPRESS CROSS REFERENCE dual port sram sem 2005 16 pin CY7C006A CY7C007A CY7C016A CY7C017A TPD16-3
Contextual Info: CY7C006A CY7C007A CY7C017A32K/16K x 8, 32K x 9 Dual-Port Static RAM CY7C006A/CY7C007A CY7C016A/CY7C017A 32K/16K x8, 32K/16K x9 Dual-Port Static RAM Features • Automatic power-down • True dual-ported memory cells which allow simultaneous access of the same memory location

Contextual Info: ^ n n i i y U I^ IV DPS129 Dense-Pac Microsystems, Inc. 0 16K X 8 CM OS SRAM M ODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS129 is a 16K X 8 Static Random Access Memory SRAM module using 8 CM OS 16K X 1 SRAMs. The memory utilizes asynchronous circuitry

PM12C

Contextual Info: fax id: 20 10 CYM1821 16K x 32 Static RAM Module Features • High-density 512-Kbit SRAM module • 32-bit standard footprint supports densities from 16K x 32 through 1M x 32 • High-speed CMOS SRAMs constructed from eight 16K x 4 SRAM SOJ packages mount­

Contextual Info: DPS129 □PM Dense-Pac Microsystems, Inc. ^ 16K X 8 C M O S SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS129 is a 16K X 8 Static Random Access Mem ory SRAM module using 8 CMOS 16K X 1 SRAMs. The memory utilizes asynchronous circuitry and may be maintained in any state for an indefinite

di/CY7C470-25DMB

Contextual Info: CY7C470 CY7C472 CY7C474 PRELIMINARY CYPRESS SEMICONDUCTOR 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Functional Description 8K x 9 , 16K x 9, and 32K x 9 FIFO buffer memory Asynchronous read/write High-speed 33.3-MHz read/write independent of depth/width

Contextual Info: DPS257 Dense-Pac Microsystems. Inc. ^ 16K X 16 C M O S SRAM M O D U LE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS257 is a 16K X 16 Static Random Access Memory SRAM module, using sixteen CMOS 16K X 1 SRAMs. The memory utilizes asynchronous circuitry

CY7C162

Abstract: L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
Contextual Info: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum

s288

Abstract: ENABLE25
Contextual Info: -L . □PM / V X Dense-Pac Microsystems, Inc. DPS288 16K X 18 CMOS SRAM MODULE O NOT RECOMENDED FOR NEW DESIGNS D ESC R IP TIO N : The DPS288 is a 16K X 18 Static Random Access Memory SRAM fabricated using 18 C M O S 16K X 1 SRAMs. The memory utilizes asynchronous circuitry

L7C164CC20

Abstract: L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation

Contextual Info: □PMDense-Pac Microsystems, DPS288 _ 16K X 18 C M O S SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTIO N: The D PS288 is a 16K X 18 Static Random Access M em ory SRAM fabricated using 18 C M O S 16K X 1 SRAM s. The memory utilizes asynchronous circuitry

V002

Contextual Info: ISSI IS23SC1604 16K-BIT SECURED SERIAL EEPROM ADVANCE INFORMATION JUNE 1998 FEATURES DESCRIPTION • 16K serial EEPROM with security features IS23SC1604 is a low-cost, low-power, highly secured 16K bits 2K x 8 serial EEPROM. It is fabricated using ISSI’s

idt7207

Abstract: P15 Package CY7C460A CY7C462A CY7C464A CY7C466A IDT7205 IDT7206
Contextual Info: 60A CY7C460A/CY7C462A CY7C464A/CY7C466A Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 8K x 9 FIFO (CY7C460A) • 16K x 9 FIFO (CY7C462A) • 32K x 9 FIFO (CY7C464A)

CY7C470

Abstract: CY7C472 CY7C474 pfr 4fi
Contextual Info: W CYPRESS CY7C470 CY7C472 CY7C474 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Features Functional Description • 8K x 9 16K x 9, and 32K x 9 FIFO buffer memory • Asynchronous read/write • High-speed 333-M H z read/write independent of depth/width

CY7C460A

Abstract: CY7C462A CY7C464A CY7C466A IDT7205 IDT7206 IDT7207
Contextual Info: CY7C460A/CY7C462A CY7C464A/CY7C466A Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 8K x 9 FIFO (CY7C460A) • 16K x 9 FIFO (CY7C462A) • 32K x 9 FIFO (CY7C464A)

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIMINARY p y p p rrc q Cascadeable 8K x 9 FIFO Cascadeable 16K x 9 FIFO Cascadeable 32K x9FIFO Features Functional Description • 8K x 9 , 16K x 9, 32K x 9 FIFO buffer memory • Asynchronous read/write • High-speed 333-MHz read/write inde­

CY7C4255

Abstract: CY7C4265 CY7C42X5
Contextual Info: CY7C4255 CY7C4265 8K/16K x 18 Deep Sync FIFOs Features • Pb-Free Packages Available Functional Description • High-speed, low-power, first-in first-out FIFO memories • 8K x 18 (CY7C4255) • 16K x 18 (CY7C4265) • 0.5 micron CMOS for optimum speed/power

7027a

Abstract: 7M206 7027-A
Contextual Info: Integrated Device Technology* Inc. 8K X 9 & 16K X 9 CEMOS PARALLEL IN-OUT FIFO MODULE FEATURES: • • • • • • • • • • • First-In/First-Out memory module 8K x 9 organization IDT7M205S 16K x 9 organization (1DT7M206S) High speed: 20ns (max.) access time

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ROW SELECT 8 O ROW ADDRESS CONTROL The L7C164 and L7C166 provide asynchronous unclocked operation with matching access and cycle times.

Contextual Info: 25/0251 CY7C09159A CY7C09169A 8K/16K x 9 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 8K x 9 organization CY7C09159A — 16K x 9 organization (CY7C09169A)