16K X 8 Search Results

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords

A12L

Abstract: A13L CY7C006 CY7C016 C0066
Contextual Info: with Sem, In t, Busy CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)

CY7C006

Abstract: CY7C016
Contextual Info: fax id: 5207 1 CY7 C0 16 CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)

di/CY7C470-25DMB

Contextual Info: CY7C470 CY7C472 CY7C474 PRELIMINARY CYPRESS SEMICONDUCTOR 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Functional Description 8K x 9 , 16K x 9, and 32K x 9 FIFO buffer memory Asynchronous read/write High-speed 33.3-MHz read/write independent of depth/width

Contextual Info: DPS257 Dense-Pac Microsystems. Inc. ^ 16K X 16 C M O S SRAM M O D U LE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS257 is a 16K X 16 Static Random Access Memory SRAM module, using sixteen CMOS 16K X 1 SRAMs. The memory utilizes asynchronous circuitry

CY7C470

Abstract: CY7C472 CY7C474 pfr 4fi
Contextual Info: W CYPRESS CY7C470 CY7C472 CY7C474 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Features Functional Description • 8K x 9 16K x 9, and 32K x 9 FIFO buffer memory • Asynchronous read/write • High-speed 333-M H z read/write independent of depth/width

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIMINARY p y p p rrc q Cascadeable 8K x 9 FIFO Cascadeable 16K x 9 FIFO Cascadeable 32K x9FIFO Features Functional Description • 8K x 9 , 16K x 9, 32K x 9 FIFO buffer memory • Asynchronous read/write • High-speed 333-MHz read/write inde­

Contextual Info: /UHOU. i I/ o u / a u CY7C460 CY7C462 CY7C464 Revision: August 17,1994 F# CYPRESS Cascadable 8K x 9 FIFO Cascadable 16K x9F IF O Cascadable 32K x9F IF O Features Functional Description • 8K x 9 ,16K x 9 ,32K x 9 FIFO buffer memory • Asynchronous read/write

Contextual Info: CY7C470 CY7C472 CY7C474 PRELIMINARY CYPRESS SEMICONDUCTOR 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Functional Description Features • 8K X 9 , 16K X 9, and 32K x 9 FIFO buffer memory T h e CY 7C47X F IF O series consists of high-speed, low-power, first-in first-out

Contextual Info: □PM DPS288 Dense-Pac Microsystems, Inc. 16K X 18 C M O S SRAM M O D U LE O NOT RECOMENDED FOR NEW DESIGNS DESCRIPTIO N: The D PS288 is a 16K X 18 Static Random Access M em ory SRAM fabricated using 18 C M O S 16K X 1 SRAM s. The memory utilizes asynchronous circuitry

Contextual Info: CYM1821 — 16K x 32 Static RAM Module CYPRESS ^ SEMICONDUCTOR Features Functional Description • High-density 512-Kbit SRAM module The CYM1821 is a high-performance 512-Kbit static RAM module organized as 16K words by 32 bits. This module is con­ structed from eight 16K x 4 SRAM SOJ

Contextual Info: CY7C470 CY7C472 CY7C474 PRELIMINARY * ¥ CYPRESS SEMICONDUCTOR 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Functional Description 8K x 9 , 16K x 9, and 32K x 9 FIFO buffer memory T he C Y C 47X FIFO series consists o f high­ speed, low-power, first-in first-out F IF O

Contextual Info: DPS7M464/DPS8M464 Dense-Pac Microsystems, Inc. ^ 16K X 4 C M O S SR A M M O D U L E NOT RECOMENDED FOR NEW DESIGNS D ESC R IP TIO N : The D P S7M 464/D P S8M 464 are 16K X 4 SRAM module built with four 16K X 1 C M O S SRAMs. The memory utilizes asyncronous circuitry and may be

B057r

Abstract: CY7C006 CY7C016 IDT7006 IDT7016
Contextual Info: CYPRESS PRELIMINARY 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • C M O S for optim um speed/power • H igh-speed access — 15 n s com m ercial T h e C Y 7C 006 an d C Y 7C 016 a re h ig h ­ s p e e d C M O S 16K x 8 a n d 16K x 9 d u a l­

Contextual Info: M IC R O N 16K X MT58LC1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM 3.3V OPERATION CLOCKED, REGISTERED INPUTS FEATURES • • • • • Fast access times: 20 and 25ns Fast OE: 8 and 10ns Single +3.3V +0.3V power supply Separate, electrically isolated output buffer power

Contextual Info: 16K X 32 CMOS DUAL-PORT STATIC RAM MODULE jdt IDT7M1002 Integrated Device Technology, Inc. DESCRIPTION FEATURES The IDT7M1002 is a 16Kx 32 high-speed CMOS Dual-Port Static RAM Module constructed on a co-fired ceramic sub­ strate using four 16K x 8 IDT7006) Dual-Port Static RAMs in

Contextual Info: V CYPRESS CY7C056V CY7C057V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features True dual-ported m em ory cells which allow sim ulta­ neous access of the same m em ory location 16K x 36 organization CY7C056V 32K x 36 organization (CY7C057V)

Contextual Info: IS23SC1604 16-KBIT SECURED SERIAL EEPROM ADVANCE INFORMATION JANUARY 1999 FEATURES DESCRIPTION • 16K serial EEPROM with security features IS23SC1604 is a low-cost, low-power, highly secured 16K bits 2K x 8 serial EEPROM. It is fabricated using ISSI’s

CE203

Contextual Info: □PM DPE8M656 Dense-Pac Microsystems. Inc. 16K X 16 CMOS EEPROM MODULE O DESCRIPTION: The D PE8M 656 is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPRO M module and may be organized as 16K X 16 or 32 K X 8. The module is built with four low-power C M O S 8K X 8 EEPROM s

Contextual Info: 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology □ H ighspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

FN8120

Abstract: 4165A X4163 X4165 4165G
Contextual Info: X4163, X4165 16K, 2K x 8 Bit Data Sheet May 12, 2006 FN8120.1 DESCRIPTION CPU Supervisor with 16K EEPROM The X4163, X4165 combines four popular functions, Power-on Reset Control, Watchdog Timer, Supply Voltage Supervision, and Serial EEPROM Memory in one

FN 52 pin MOTOROLA 778-02

Contextual Info: MOTOROLA Order this document by MCM62996/D SEMICONDUCTOR TECHNICAL DATA MCM62996 16K x 16 Bit Asynchronous Fast Static RAM The MCM62996 is a 262,144 bit static random access memory organized as 16,384 words of 16 bits. The device integrates a 16K x 16 SRAM core with active

OV10

Contextual Info: Electronic Designs Inc. EDH84H16C-45/55 16K x 4 SRAM CMOS The EDH84H16C 16K x 4 is part of a new family of High Speed Static RAM devices developed by Electronic Designs Inc. The EDH84H16C uses the advanced EDI MEMORYPACK packaging concept which mounts several LCC

Contextual Info: Advance information •■ AS29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors