168PIN Search Results

54-TSOP

Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004

M366S0924ETS-C7A

Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
Contextual Info: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002

Contextual Info: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module

TME 87 0D

Contextual Info: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

Contextual Info: SIEMENS 3.3V 8M x 64-Bit EOO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72 V8045G U-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •

smd JSs 13

Abstract: smd JSs smd JSs 99 VT244A smd JSs 75 DQ2Q-DQ23 3E2 material specification
Contextual Info: SIEM EN S 16M x 72-Bit Dynamic RAM EDO- Module E C C - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Inform ation • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 1 bank 16 M x 72 organisation

Contextual Info: 168Pin PC133 Unbuffered DIMM 128MB with 16Mx8 CL3 TS16MLS64V6D Description Placement The TS16MLS64V6D is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS16MLS64V6D consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 168PIN PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6W Description Placement The TS8MLS64V6W is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6W consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 32MB 168PIN PC66 SDRAM DIMM With 2M X 8 3.3VOLT TS4MLS64V1P2N Description Placement The TS4MLS64V1P2N is a 4M bit x 64 Synchronous Dynamic RAM, high density for PC-66. The TS4MLS64V1P2N consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 168Pin PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6L Description Placement The TS8MLS64V6L is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6L consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 168PIN PC66 Unbuffered DIMM 128MB with 8Mx8 CL3 TS16MLS64V1WN Description Placement The TS16MLS64V1WN is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS16MLS64V1WN consists of 16pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 168PIN PC100 Unbuffered DIMM 32MB With 4M X16 CL3 TS4MLS64V8Z Description Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high-density for PC-100.The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Dimensions Description The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits

Contextual Info: 128MB 168PIN PC100 CL2 SDRAM DIMM With 16M X 8 3.3VOLT TS16MLS64V8D2 Description Placement The TS16MLS64V8D2 is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS16MLS64V8D2 consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 168PIN PC133 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V6D Description Placement The TS32MLS72V6D is a 32M x 72bits Synchronous Dynamic RAM high-density for PC-133. The TS32MLS72V6D consists of 18pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

HYM71V8635ALT6-H

Abstract: HYM71V8635ALT6-K HYM71V8635AT6 HYM71V8635AT6-H HYM71V8635AT6-K
Contextual Info: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635AT6 Series DESCRIPTION The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

HYM71V32755ALT8M-8

Abstract: HYM71V32755ALT8M-P HYM71V32755ALT8M-S HYM71V32755AT8M HYM71V32755AT8M-8 HYM71V32755AT8M-P HYM71V32755AT8M-S
Contextual Info: 32Mx72 bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32755AT8M Series DESCRIPTION The Hynix HYM71V32755AT8M Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

HYM71V16755ALT8M-8

Abstract: HYM71V16755ALT8M-P HYM71V16755ALT8M-S HYM71V16755AT8M HYM71V16755AT8M-8 HYM71V16755AT8M-P HYM71V16755AT8M-S
Contextual Info: 16Mx72 bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16755AT8M Series DESCRIPTION The Hynix HYM71V16755AT8M Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

HYM76V4M655HGLT6-8

Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
Contextual Info: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: UG516V7288HSG Revision History Apr 06 , 2000 Rev - A Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788 support@unigen.com Re-Tek- 068_M UG516V7288HSG 128M Bytes (16M x 72) DRAM 168Pin DIMM With ECC based on 8M x 8

Contextual Info: UG516W664 8 4HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 16M x 4 General Description Features The UG516W664(8)4HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W664(8)4HK(S)G is assembled using 16 pcs of 16Mx4 4K/8K refresh DRAMs in a 32 pin 400

Contextual Info: UG54W742 4 4GJ(T)G 32M Bytes (4M x 72) DRAM 168Pin DIMM With ECC based on 4M x 4 General Description Features The UG54W742(4)4GJ(T)G is a 4,194,304 bits by 72 EDO DRAM module. The UG54W742(4)4GJ(T)G is assembled using 18 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in

Contextual Info: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in

Contextual Info: UG58E644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58E644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58E644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ