16400A Search Results

Contextual Info: 16400A GoldStar 4,194,304 WORDS X4BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 71C 16400A is the new generation dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4 Bit. G M 71C 16400A has realized higher density, higher perform ance and various functions by

HM5116400ATS

Abstract: HT206
Contextual Info: HB56T432D Series 4,194,304-word X 32-bit High Density Dynamic RAM Module The H B 56T 432D is a 4 M x 32 dynam ic RAM Sm all O utline DIM M S .0 . DIM M , mounted 8 p ie c e s o f 16-M bit D R A M (H M 51 16400A T S / ALTS) sealed in TSOP package. An outline o f the H B56T432D is 72-pin Zig Zag

1MX16BIT

Abstract: 16MX1
Contextual Info: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE

SEM t11

Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command

whirlpool awg 175

Abstract: IEC408 data sheet of fittings of fire sprinkler system EFJ4001-6P8 cds33 ENF125E-3PB6 ENF16003-3P8 EFJ2001-6P8 CDNF16 ul508a
Contextual Info: Disconnects Section Contents Page RED indicates NEW information 307 Disconnects Safety Module fused disconnect switch . . . . . 308-309 Coordination Module™ fused lighting and appliance panelboard . . . . . . . . . . . . . . . . . . . . . . 310-311 Power Module™ — all-in-one

Contextual Info: HB56D472EJ Series 4 ,1 9 4 ,3 0 4 -w o r d x 7 2 -b it H ig h D e n s ity D y n a m ic R A M M o d u le The H B56D472EJ belongs to 8 byte DIM M Dual In -lin e M em ory M od u le fa m ily , and has b een developed as an optim ized main memory solution for 4 and 8 Byte processor applications.

HB56D836SBT-AC

Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Contextual Info: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms

Contextual Info: MEMORY jgggHÊÈIÊHÈlHÊÈÊHIÊÈÈËIMH 16400A-50/-60/-70 CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic DAM • DESCRIPTION The Fujitsu 16400A is a fully decoded CMOS Dynamic RAM; DR AM :Ifriat contains 16,777,216 memory cells accessible in 4-bit increments. The 16400A features,a “l i s t page” mode of operation whereby high­

GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Contextual Info: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I

AN2426

Abstract: GM71C16400AJ6 GM71C16400
Contextual Info: 16400A LG Semicon Co.,Ltd. 4,194,304 W ORDS x 4 BIT CMOS DYNAM IC RAM Description Pin Configuration The GM 16400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. 16400A has realized higher density, higher performance and various functions by utilizing advanced CMOS

Contextual Info: HB56TW432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW432D is a 4M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16-Mbit DRAM (16400ATS) sealed in TSOP package. An outline of the HB56TW432D is 72-pin Zig Zag

Contextual Info: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

Contextual Info: «HYUNDAI HY51V17400A, 16400A 4M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dyn a m ic RAM organized 4,194,304 x 4 -b it configuration w ith Fast Page m ode C M O S DRAM s. Fast Page m ode offers high speed random access o f m em ory cells within the sam e row.

5116400AJ

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 16400AJ-50/-60/-70/-80 HYB 16400ASJ-50/-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time

Q67100-Q1279

Abstract: 39516800 39S16800AT-8 39516800AT-10
Contextual Info: SIEMENS HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: • Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Automatic

do-34 hitachi

Abstract: Intronic
Contextual Info: HB56AW472E Series 4,194,304-Word x 72-Bit ECC High Density Dynamic RAM Module HITACHI The HB56AW472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

HY514260

Abstract: HY5117404A 164-04A 4m 300mil
Contextual Info: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1

Contextual Info: SIEM EN S 4 M X 4-Bit Dynamic RAM HYB 16400AJ-50/-60/-70/-80 HYB 16400ASJ-50/-60/-70/-80 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time

ALRS8

Contextual Info: Ml IT-,5.5"à 16400A/AL Series Preliminary 4,194,304-Word x 4-Bit Dynamic Random Access Memory Rev. 0.1 Sep. 30,1993 HITACHI T h e H ita c h i H M 5 1 W 1 6 4 0 0 A /A L is a C M O S dynamic RAM organized 4,194,304 words x 4 bits. It employs the m ost advanced CMOS technology

Contextual Info: ADE-203-172A Z 16400A/AL Series 4,194,304-Word x 4-Bit Dynamic Random Access Memory HITACHI T he H itach i H M 5 1W 1 6 4 0 0 A /A L is a CM O S dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology fo r high p e rfo rm a n c e and low p o w er. T he

Contextual Info: HYM532400 N-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532400 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight 16400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is

RQW 130

Abstract: A10q
Contextual Info: 16400A Series •HYUNDAI 4M X 4-bit CM OS DRAM DESCRIPTION The 16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The 16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

GM71C16400AR-7

Contextual Info: @ LG Semicon. Co. LTD Description Pin Configuration The 16400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. 16400A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The 16400A offers Fast