HY51V16400A Search Results

Contextual Info: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

1DF16-10-JUL9S

Contextual Info: HY UNDAI HYM5V32400A N-Series 4M X 32-bit CMOS DRAM MODULE DESCRIPTION TTie HYM5V32400A is a 4M x 32-bit Fast page m ode CMOS DRAM m odule consisting of eight HY51V16400A in 24/26 pin SOJ o r TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is m ounted

CDQ31

Contextual Info: HYUNDAI HYM5V64400A N-Series 4M X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64400A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V16400A in 24/28 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit

8500K25

Contextual Info: • H Y U N D A I HY51V16400A Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

WC-340

Contextual Info: -HYUNDAI HY51V16400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The H Y51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: «HYUNDAI HY51V17400A, HY51V16400A 4M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dyn a m ic RAM organized 4,194,304 x 4 -b it configuration w ith Fast Page m ode C M O S DRAM s. Fast Page m ode offers high speed random access o f m em ory cells within the sam e row.

Contextual Info: HYUNDAI HYM5V72A400A N-Series 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V16400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board

RQW 130

Abstract: A10q
Contextual Info: HY51V16400A Series •HYUNDAI 4M X 4-bit CM OS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

153 SP-J

Contextual Info: « « Y U IID A I HYM5V72A400A N-Series 4Mx72-bìt CMOS DRAM MODULE DESCRIPTION The HYM5V72A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V16400A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 166 pin

Contextual Info: HYM5V72A400A N-Series 4Mx72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V16400A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The

Contextual Info: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

HYM5V64414

Contextual Info: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR

HY514260

Abstract: HY5117404A 164-04A 4m 300mil
Contextual Info: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1

r4kf

Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Contextual Info: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

HY5118160

Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Contextual Info: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE

HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC

d 100 d

Abstract: Y514100A HYM532220
Contextual Info: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"

Contextual Info: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16