39S16800 Search Results

SEM t11

Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command

smd marking m11

Abstract: M6 SMD MARKING CODE
Contextual Info: 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 • High Performance: -8 -10 Units 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns fCK MAX. • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command

39S16802AT-10

Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation

Contextual Info: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

9633E

Abstract: 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E
Contextual Info: INFORMATION NOTE IBIS MODELS FOR SIEMENS DRAM and SDRAMs 9.96 InfIBIS.DOC IBIS MODELS I/O-Buffer Information Specification IBIS Behavioral IBIS is an emerging standard for electronic behavioral specifications of digital integrated circuit input/output (I/O) analog characteristics. IBIS

hyb39s16

Abstract: marking smd wmf CAY smd marking code
Contextual Info: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge

P-TSOPII-44

Abstract: CAZ MARKING AZ2 marking
Contextual Info: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge •

smd marking KH

Abstract: P-TSOPII-44
Contextual Info: HYB39S16400/800CT-8/-10 16MBit Synchronous DRAM S IE M E N S 16 MBit Synchronous DRAM fourth generation Preliminary Information • • • • • • • • High Performance: -8 -10 Units fC K (m ax.) 125 100 MHz tC K 3 8 10 ns tA C 3 6 7 ns tC K 2 10

Q67100-Q1279

Abstract: 39516800 39S16800AT-8 39516800AT-10
Contextual Info: SIEMENS HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: • Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Automatic

FCK2A

Contextual Info: SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 /cK MAX • HYB 39S16400/800/160CT-8/-10 125 • -10 Units • Automatic and Controlled Precharge Command 100 MHz ?CK3 8 10 !AC3 6 ?CK2 10 12 ns ?AC2 6 8 ns 7 Multiple Burst Read with Single Write

Contextual Info: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM SIEMENS 16 M Bit S yn c h ro n o u s DRAM A dvan ced In form atio n • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge

Contextual Info: SIEM ENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 Multiple Burst Read with Single Write Operation -8 -10 Units 125 100 MHz Automatic and Controlled Precharge Command

SS35L

Abstract: smd marking YB Q67100-Q1244 AAFL1
Contextual Info: SIEM EN S 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns • Multiple Burst Operation Read • Autom atic Com mand • Data M ask for Read / W rite control x4, x8

Contextual Info: HYB39S16400/800CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM fourth generation Preliminary Information • High Performance: Multiple Burst Operation -8 -10 Units fCK(max.) 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command Read with Single Write

39S16800AT-8

Abstract: 39S16800AT-10
Contextual Info: SIEMENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information High Performance: -8 -10 Units /CK 125 100 MHz Automatic and Controlled Precharge Command CO Multiple Burst Read with Single Write Operation o • 8 10 ns

SMD marking s07

Abstract: smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191
Contextual Info: SIEM EN S 16 MBit Synchronous DRAM • HYB 39S16400/800/160CT-8/-10 High Performance: /c K M A X ?CK3 -8 -10 Units 125 100 MHz 8 10 ns ! AC3 6 7 ?CK2 10 12 ns ?AC2 6 8 ns ns • Multiple Burst Read with Single Write Operation • Autom atic and Controlled Precharge

Contextual Info: SIEMENS 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns Multiple Burst Read with Operation Automatic Command and Controlled Single Write Precharge Data Mask for Read / Write control x4, x8

39S16800AT-8

Abstract: smd marking m11 Q67100-Q1323 Q67100-Q1333 Q67100-Q1335 39S16800T 39S16800AT-10 smd marking code M11 smd code m6
Contextual Info: 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 • Multiple Burst Read with Single Write Operation -8 -10 Units fCK 125 100 MHz • Automatic and Controlled Precharge Command