1616 Search Results

IHLP1616AB-11

Abstract: IHLP-1616AB-11 34194
Contextual Info: IHLP-1616AB-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Frequency range up to 1.0 MHz • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation

Contextual Info: r h o le x * 2.50mm .098" Pitch Wire-to-Board Header FEATURES AND SPECIFICATIONS Features and Benefits Electrical • Sizes 2 to 15 circuits ■ Potting type used for sealing components in white goods applications ■ Bottom ridge protects terminal signal area 16163727

Contextual Info: PCI 1616/1616A NPN Epitaxial Silicon Transistors Semiconductor AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • Complement to 1616/1616A ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 T C h a ra cteristic Collector-base Voltage :1616 :1616A Collector-Emitter Voltage:1616

Contextual Info: 10 P/N W/CAP IN TUBE 87832-0616 87832-0816 87832-1Z16 87832-1816 87832-2016 87832-2616 87832-3016 87832- 3Z16 87832- Z016 87832- 5016 87832- 1016 87832-1616 RIBS LOCATION VARY DEPENDING ON CKT. SIZES 0.50±0.05 SQ. TYP 3.60 425 0 15 SET (0.65) (TYP) 1.20

Contextual Info: IHLP-1616AB-L1 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction

Contextual Info: IHLP-1616AB-1A www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite

100-10L

Contextual Info: IHLP-1616BZ-01 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite

Contextual Info: IHLP-1616BZ-A1 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite

Contextual Info: IHLP-1616BZ-A1 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite

KSB1116

Contextual Info: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to 1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

TRANSISTOR D1616

Abstract: transistor d1616a D1616A d1616 a KSD1 d1616
Contextual Info: 1616/1616A 1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

MG25N2YS1

Abstract: mg25n2
Contextual Info: TOSHIBA O I S C R E T E / O P T O J _ ^0 9 0 9 7 2 5 0 TO SH IBA D IS C R E T E / O P T O TO SH IBA P E I ‘ìCHTgSO 0 0 1blfc,5 D I 90D 16165 SEMICONDUCTOR -f~33~27 TOSHIBA GTR MODULI; MG25N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: TOS HIB A { D I S C R E T E / O P T O } io 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A de l'ìc m a sa 90D SEMICONDUCTOR DD i b i i a i g 16161 D T ~ ? 3 - I3 TOSHIBA GTR MODULE MG25N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: IHLP-1616AB-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite

HY51VS

Contextual Info: HY51V S 16160HG/HGL 1M x 16Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)16160HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16160HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16160HG/HGL offers Fast Page Mode as a high

Contextual Info: HY51V S 16163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)16163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16163HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)16163HG/HGL to be

HY57V161610B

Contextual Info: C » « Y U H D f t P - - - - - - - - - - • H Y 57V 161610B 2 Banks x S12K X 16 Bit Synchronous DRAM DESCRIPTION The Hyundai 161610B is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. 161610B is organized as 2banks of

Contextual Info: MEMORY 1 M x 16 BIT HYPE:R pAGE M 0 DE DY NAMIIC R A M MB81 16165B -5 0/-6i0=^ • W l m m r V r R 1 ■ w V r V r . \ r / V CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM ■ DESCRIPTION The Fujitsu 16165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: SAW Device WFC38C1588CD For Automotive • Features ● SAW filter for GPS/GLONASS. ● A low-loss filter. ● Compact and light. ■ Specifications Model WFC38C1588CD Item min. typ. Nominal frequency MHz − 1588 − Maximum insertion loss (dB) (1560 to 1616MHz)

CR1616

Contextual Info: CR 1616 Lithium Manganese Dioxide Data Sheet Type Number: . 6616 Designation IEC: . CR 1616 System: . Li-Manganese dioxide / Organic Electrolyte

IHLP-1616BZ-11

Contextual Info: IHLP-1616BZ-11 Vishay Dale Low Profile, High Current Inductor FEATURES • Shielded construction • Frequency range up to 1.0 MHz RoHS • Lowest DCR/µH, in this package size COMPLIANT • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction

Contextual Info: 1616FNA-29 262144-BIT 16384-WORD BY 16-BIT COMS STATIC RAM DESCRIPTION The M H 1616FN A is a 2 6 2 1 4 4 -bits CMOS static PIN CONFIGURATION (TOP VIEW) [Both side] RAM nodule organized as 16384-w ords by 16-bits. It consists of DQo 1 1 :our industry standard 1 6 K x 4 static RAMs and designed

Contextual Info: UTC 1616 CMOS IC 6 TONES SIREN/ALARM SOUND GENERATOR WITH SOFT CHIRP DESCRIPTION The UTC 1616 is a CMOS design for 6 different alarm sounds application. The sound of UTC 1616 will be generated in cycling sequence. The soft chirp is only generated within 200ms of the

transistor b1116

Abstract: B1116A B1116 transistor b1116a KSB116A 1116a KSB1116 KSB1116A KSD1616
Contextual Info: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to 1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO