KSD1 Search Results

KSB1098

Abstract: KSD1589
Contextual Info: KSD1589 KSD1589 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB1098 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

KSB1121

Abstract: KSD1621
Contextual Info: KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code Year code

Contextual Info: PCI KSD1616/1616A NPN Epitaxial Silicon Transistors Semiconductor AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 T C h a ra cteristic Collector-base Voltage :KSD1616 :KSD1616A Collector-Emitter Voltage:KSD1616

Contextual Info: KSD1047 KSD1047 Audio Power Amplifier DC to DC Converter • High Current Capability • High Power Dissipation • Complement to KSB817 1 1.Base 2.Collector TO-3P 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSB1015 KSB1015 Low Frequency Power Amplifier • Low Collector Emitter Saturation Voltage • Complement to KSD1406 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
Value Units

Contextual Info: KSD1221 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB906 I-PACK ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

Contextual Info: KSD1273 NPN EPITAXIAL SILICON TRANSISTOR HIGH hFE, AF POWER AMPLIFIER TO-220F • ”Full Pack” Package for Simplified Mounting Only by a Screw, Requires no Insulator. ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage

Contextual Info: KSD1222 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Built in a Damper Diode at E-C • Darlingt on TR • Complement to KSB907 I-PACK ABSOLUTE MAXIMUM RATINGS Characteristic

KSB1116

Contextual Info: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

TRANSISTOR D1616

Abstract: transistor d1616a D1616A d1616 a KSD1 d1616
Contextual Info: KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

4035pc

Contextual Info: KSD1944 KSD1944 High Gain Power Transistor 1 1.Base TO-220F 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage

Contextual Info: KSD1943 HIGH NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic VcBO Sym bol 80 V C ollecto r E m itter Voltage VcEO 60 V Em itter Base Voltage V ebo 8 V C ollecto r C urrent lc 3 A

NPN 2A TO 126

Abstract: KSD1691 K*D1691
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 KSD1691 TRANSISTOR NPN 1. EMITTER FEATURES Low Collector-Emitter Saturation Voltage & Large Collector Current z High Power Dissipation: PC = 1.3W (Ta=25°C)

d1616

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KSD1616 KSD1616A Features • • x Audio frequency power amplifier & medium speed switching Marking:D1616 X

Contextual Info: KSD1221 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB906 l-PACK ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector Base Voltage VcBO 60 V Collector Emitter Voltage

transistor BD139 N

Abstract: bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD135 VcB O Rating Unit 45 V : BD137 60 V

Contextual Info: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB1017 TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Symbol 80 V Collector Emitter Voltage V cE O 80 V Emitter Base Voltage

Contextual Info: KSD1362 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollecto r Base Voltage : VCbo = 150V • C ollecto r C u rre n t: lc = 5A • C ollecto r D issipation : Pc = 20W Tc=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KSD1616A TO-92 TRANSISTOR NPN FEATURE z Audio frequency power amplifier medium speed switching z complement to KSB1116A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors TO-126C KSD1691 TRANSISTOR NPN 1. EMITTER FEATURES Low Collector-Emitter Saturation Voltage & Large Collector Current z High Power Dissipation: PC = 1.3W (Ta=25°C)

Contextual Info: KSB1023 PNP SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • High DC Current Gain • Low C ollector Em itter Saturation Voltage • C om plem ent to KSD1413 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic

transistor b1116

Abstract: B1116A B1116 transistor b1116a KSB116A 1116a KSB1116 KSB1116A KSD1616
Contextual Info: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

KSD1616

Abstract: KSD1616A ksb1116
Contextual Info: KSD1616 KSD1616A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • Audio frequency power amplifier & medium speed switching Complement to KSB1116/1116A NPN Silicon Epitaxial Transistors Maximum Ratings

D1616A

Abstract: transistor d1616a 1616a TRANSISTOR D1616 D1616 KSD1616 KSD1616A
Contextual Info: KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO