1608FS Search Results

MCR03J102

Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
Contextual Info: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were

XFMR1 transformer

Abstract: XFMR1 murata SAW
Contextual Info: Preliminary SF2076B • • • • • Designed for 802.16 and WIMAX Receiver IF Application Low Insertion Loss 5.0 X 7.0 mm Surface-Mount Case Differential Input and Output Complies with Directive 2002/95/EC RoHS Pb 464.00 MHz SAW Filter Absolute Maximum Ratings

BLM18HE152SN1D

Abstract: CL10B103KBNC SGL0163Z 800130 SGL-0163 HEMT MMIC POWER AMPLIFIER MMIC SOT 363 marking CODE 81 marking CODE 81 MMIC SOT 363 68 S3V MMIC SOT 363 marking CODE 81 low noise
Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

FPD7612P70

Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

SGA8343Z

Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

Contextual Info: LTC1608 High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1608 is a 500ksps, 16-bit sampling A/D converter that draws only 270mW from ±5V supplies. This high performance device includes a high dynamic range

Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

Contextual Info: 44 TYPE M ultilayer Chip Inductors 1608FS The LL1608-FS Series is a miniature multilayer ceramic chip inductor. Toko's proprietary laminated ceramic material pro­ vides high SRF, excellent Q, and superior reliability. The FS al­ lows up to 3 times the current handling o f standard multilayers.

TDMA simulation ADS

Abstract: ATF-50189 BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305
Contextual Info: ATF-50189 High Linearity 900 MHz Amplifier Avago Technologies Enhancement Mode Psuedomorphic HEMT in SOT 89 Package Application Note 5293 Introduction Application Guidlines Avago Technologies ATF-50189 is an enhancement mode PHEMT designed for high linearity and medium

DC generator

Abstract: MAX2385EVKIT MAX2386EVKIT
Contextual Info: 19-2205; Rev 0; 10/01 MAX2385/MAX2386 Evaluation Kits Features ♦ +2.7V to +3.6V Operation ♦ 50Ω SMA Inputs and Outputs on RF, IF, and LO Ports for Easy Testing ♦ All Matching Components Included ♦ Fully Assembled and Tested Ordering Information PART

XFMR1 transformer

Abstract: XFMR2 transformer XFMR1 SMI7035 Toko inductor TOKO INDUCTORS TOKO 7.5 MHz SAW filter TOKO 707 GRM1885C1H6R8CZ01D GRM1885C1HR50CZ01D
Contextual Info: Preliminary SF2076B • • • • • Designed for 802.16 and WIMAX Receiver IF Application Low Insertion Loss 5.0 X 7.0 mm or Single Ended Surface-Mount Case Differential Input and Output Complies with Directive 2002/95/EC RoHS Pb 464.00 MHz SAW Filter

g14a

Abstract: TC7SH08FUTE85L LTC1604 LTC1608 LTC1608ACG LTC1608CG 1608FS 1m1608
Contextual Info: LTC1608 High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO A Complete, 500ksps 16-Bit ADC 90dB S/ N+D and –100dB THD (Typ) Power Dissipation: 270mW (Typ) No Pipeline Delay

SGA-8343Z

Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

Frequency Generator 1MHz

Abstract: toko VARIABLE CAPACITORS GRM39X7R104K016A MAX2720 MAX2720EVKIT MAX2721 MAX2721EVKIT
Contextual Info: 19-1715; Rev 0; 4/00 MAX2720/MAX2721 Evaluation Kits Features ♦ Easy MAX2720/MAX2721 Evaluation ♦ All Critical Peripheral Components Included ♦ SMA Input and Output Signal Connectors ♦ RF Ports Matched to 1900MHz MAX2720 ♦ RF Ports Matched to 2315MHz (MAX2721)

BLM18HE152SN1D

Abstract: BLM18HE152SN CL10B103KB BLM18HE152 CL10B103KBNC SGL0163Z 80013 CL10B103K 9C06031A0R00
Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

CL10B103KBNC

Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

SGA8343z

Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

samsung bluetooth

Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
Contextual Info: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to