15A DIODE Search Results

OM5212SC

Abstract: 5213
Contextual Info: OM5209SC - OM5213SC ELECTRICAL CHARACTERISTICS Per Diode Type Maximum Forward Voltage (1) Tj = 25° C Tj = 100° C PIV OM5209SC OM5210SC OM5211SC OM5212SC OM5213SC Maximum Reverse Current Tj = 25° C Tj = 100° C 50 100 1.2V @ 15A 1.00V @ 15A 150 200 400 1.45V @ 15A 1.25V @ 15A

p14nf10

Abstract: B14NF10 p14nf10fp STP14NF10 STB14NF10 STB14NF10T4 STP14NF10FP stp14nf10f B14NF1
Contextual Info: STB14NF10 STP14NF10 - STP14NF10FP N-channel 100V - 0.115Ω - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB14NF10 100V <0.13Ω 15A STP14NF10 100V <0.13Ω 15A STP14NF10 100V <0.13Ω 15A

Contextual Info: ISL9R1560G2_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

19NF20

Abstract: STF19NF20 STP19NF20 JESD97 STB19NF20 9451A STF9NF20
Contextual Info: STB19NF20 - STF19NF20 STP19NF20 N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID pw STB19NF20 200V <0.16Ω 15A 90W STF19NF20 200V <0.16Ω 15A 25W STP19NF20 200V <0.16Ω 15A 90W

Contextual Info: ISL9R1560G2_F085 15A, 600V Stealth Rectifier Features 15A, 600V Stealth Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

19nf20

Contextual Info: STB19NF20 - STF19NF20 STP19NF20 N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID pw STB19NF20 200V <0.16Ω 15A 90W STF19NF20 200V <0.16Ω 15A 25W STP19NF20 200V <0.16Ω 15A 90W

Contextual Info: RURP1560_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=52ns(Typ. @ IF=15A ) The RURP1560_F085 is an ultrafast diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated,

Contextual Info: RURP1560_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=52ns(Typ. @ IF=15A ) The RURP1560_F085 is an ultrafast diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated,

Contextual Info: RHRG1560CC_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560CC_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride

Contextual Info: RHRG1560_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride

ceb65

Abstract: 15d60
Contextual Info: CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP655N 150V 0.153Ω 15A 10V CEB655N 150V 0.153Ω 15A 10V CEI655N 150V 0.153Ω 15A CEF655N 150V 0.153Ω 15A 10V d 10V D Super high dense cell design for extremely low RDS(ON).

FSF9250R4

Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Contextual Info: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using

1/CXD 9883

Abstract: 9883
Contextual Info: GBI 15A . GBI 15M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /4 Inline bridge Silicon-Bridge Rectifiers GBI 15A . GBI 15M Publish Data Features

Contextual Info: 15A CELL SERIES 硅整流器 Silicon Rectifier •特征 Features ● Io ■外形尺寸和印记 15A Outline Dimensions and Mark 15A CELL VRRM 100V~1000V ● 电极表面高可焊性 Solderable electrode surface ● ● Silicone Rubber .087 2.2 .071(1.8)

Contextual Info: 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15D120BCT 1200V 15A APT15D120BCTG 1200V 15A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS

YG803C06

Contextual Info: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection

APT10035LLL

Abstract: APT15D120BCTG
Contextual Info: 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15D120BCT 1200V 15A APT15D120BCTG 1200V 15A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS

Contextual Info: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Tj=125°C, typ Applications Features Low VF Optimized for 3.3V 5V output application

YG803C06

Abstract: application FULL WAVE RECTIFIER diode full wave rectifier 6 v
Contextual Info: YG803C06 15A Schottky barrier diode (60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection

APT15D30K

Abstract: APT15D30SA APT30M75BLL
Contextual Info: 1 2 TO-220 D2PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 1 2 2 APT15D30K 300V APT15D30SA 300V 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT15D60B APT15D60S 600V 600V 15A 15A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

power Diode 800V 5A

Abstract: APT10035LLL
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT15D120B 1200V APT15D120S 1200V 15A 15A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

R1560G2

Abstract: IRF450 ISL9R1560G2 TA49410 dt3800
Contextual Info: [ /Title ISL9R 1560G 2 /Subjec t (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO247) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO ISL9R1560G2 TM Data Sheet September 2000