9883 Search Results

BS3871 type 2

Abstract: BS3871 RCBO bi-metal thermal switch rcbo type ac Bimetal Circuit breaker bs38
Contextual Info: Issued July 1998 291-9883 Data Pack B Residual current circuit breakers with overcurrent protection RCBO Data Sheet Figure 1 Dimensions 36 90 6 90 6 45 44 58 RS stock no. In (A) IÆn (A) 157-9866 6 0.3 157-9872 10 0.3 157-9888 16 0.3 295-4858 20 0.3 157-9894

Contextual Info: Extractor Tool for CTX64 Receptacle Crimp Terminal Extractor Tool Application Tooling Specification Sheet Order No. 63824-0900 FEATURES This Extractor Tool is for the removal of a CTX64 Receptacle Crimp Terminal 502306 Series from a CMX Connector (98833 Series).

Contextual Info: Instruction Sheet PRO- CRIMPER* III Hand Crimping Tool Assembly 90546- 1 with Die Assembly 90546- 2 408- 9883 16 Mar 11 Rev D PROPER USE GUIDELINES Cumulative Trauma Disorders can result from the prolonged use of manually powered hand tools. Hand tools are intended for occasional use and low volume

DS80CH11

Abstract: 9883
Contextual Info: Dallas Semiconductor IME 3Q01 Product Tested Fails ppm DS2118M DS21X5Y DS80CH11 12380 5182 9191 3 14 66 242 2409 7181 Totals for 0.6um: 27031 83 3071 DS1232 DS87C520 DS2154 9883 10936 12243 3 14 21 304 1280 1715 Totals for 0.8um: 31278 38 1215 Goal = 300 ppm

RS-1019-5LP

Abstract: AMP crimper RS-1019-5L amp 16-14
Contextual Info: Instruction Sheet AMP* PRO-CRIMPER* II Hand Tool Assembly 90546-1 with Die Assembly 90546-2 AlVIF» 408-9883 10 JAN 95 RevB PROPER USE GUIDELINES Cumulative Trauma Disorders can resultfrom the prolonged use of manually powered handtools. AMP handtools are intended for occasional use and low

Contextual Info: etoy com pany Custom Products Relay Socket UHF Power Tube Socket Part No. 9883-014-11 8 Pin - Meets #SM-C-374819 Part No. 9766-244-01 Contacts employ an integral spring element and are retained by internal rings. Contacts may be omitted from any position by the factory or the

NE68135

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68135 Q1 CCB_PKG 0.11pF 0.07pF LC 0.96 nH CCB RB_PKG LB_PKG LB 0.15nH 0.45nH RC_PKG COLLECTOR 0.1 ohms CCE 0.01pF BASE 0.1 ohms LC_PKG 0.15nH CCE_PKG 0.2pF LE_PKG 0.38nH CBE_PKG 0.05pF RE_PKG 0.1 ohms CBEX_PKG CCEX_PKG 0.2pF 0.1pF

0066E

Abstract: 014e1
Contextual Info: NONLINEAR MODEL NE68518 SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1

60E-12

Abstract: NE68719 40E15
Contextual Info: NONLINEAR MODEL SCHEMATIC NE68719 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1.0 CJS 0.75 VAF 17 VJS IKF 0.18 MJS ISE 3.3e-15 FC 0.37

NE68118

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68118 Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LC LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185 XCJC NF 1.02 CJS VAF 15 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11

Contextual Info: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF

Contextual Info: NONLINEAR MODEL UPA844TC BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 8e-17 3.7e-17 MJC 0.53 0.18 BF 128 81 XCJC 1 0.5 NF 1 0.9944 CJS VAF 17 27.7 VJS 0.75 0.75 IKF 0.18 0.98 MJS ISE 3.3e-15 2.53e-10 FC 0.37 0.5 5e-12 NE 1.48 30 TF

ne85630

Abstract: 32E-16
Contextual Info: NONLINEAR MODEL SCHEMATIC NE85630 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 6e-16 MJC 0.55 time seconds BF 120 XCJC 0.3 capacitance farads

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

NE425S01

Abstract: NE425S01-T1 NE425S01-T1B
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB

NE688

Abstract: S21E UPA814T UPA814T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA

NEM0995F01-30

Abstract: LARGE SIGNAL IMPEDANCES
Contextual Info: High Power N-Channel Silicon MOSFET For Cellular Base Stations FEATURES NEM0995F01-30 3rd Order INTERMODULATION DISTORTION AND DRAIN CURRENT vs. OUTPUT POWER • HIGH LINEAR GAIN: 12 dB • HIGH DYNAMIC RANGE • LOW INTERMODULATION DISTORTION • INTERNALLY MATCHED FOR THE 820-960 MHz

5 MM OPTICAL TRANSMITTER RECEIVER

Abstract: OD-J6502-0B01 OD-J6502-HB01 OD-J6503-0A01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-MM OD-S524-SC-SM OD-S524-MUJ-MM
Contextual Info: 156/52 Mbps OPTICAL TRANSMITTER 156 Mbps OPTICAL RECEIVER FEATURES OD-J6502-0B01 OD-J6503-0A01 OUTLINE DIMENSIONS • DESIGNED FOR SONET/SDH/ATM SYSTEMS OD-J6502-0B01 OD-J6503-0A01 • REFLOW SOLDERABLE SMT PACKAGE • COMPACT SIZE: 26 x 10 x 3 mm 16 1 15

UPA831TF

Abstract: NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 UPA834TF 7371 802 transistor on 4409
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA •

UPC2745TB

Abstract: UPC2745TB-E3 UPC2746TB UPC2746TB-E3 marking C1R NEC
Contextual Info: 3 V, SUPER MINIMOLD UPC2745TB SILICON MMIC WIDEBAND AMPLIFIER UPC2746TB FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package GAIN vs. FREQUENCY 25 • LOW SUPPLY VOLTAGE: VCC = 1.8 to 3.3 V • HIGH ISOLATION:

phototransistor microwaves

Abstract: PS2605 equivalent PS2605 PS2605L PS2606 PS2606L
Contextual Info: PS2605 PS2605L PS2606 PS2606L HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE 6 PIN OPTOCOUPLER FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN PS2605, PS2606, PS2605L and PS2606L are optically coupled isolators containing a GaAs light emitting diode and an NPN

NEZ1414-3E

Contextual Info: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

NE1280100

Abstract: NE1280200 NE1280400 ca 9088 PT 14-106
Contextual Info: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE