150T Search Results

SG10SC9M

Abstract: SG10SC9
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG10SC9M 90 V 10 A Feature • Tj=150t: • Tj=150°C • P rrsm T l K r j y i s x f ä M . • P r r s m Rating • Full Molded • Dielectric Strength 2kV •¡fg *» Œ 2kV SU Main Use • Switching Regulator • DC/DC Converter

d10sc9m

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D10SC9M 90 V 10 A Feature • Tj=150t: • Tj=150°C • P rrsm 'F lîr jy î s x fô M . • P r r s m Rating • Full Molded Main Use • D C /D C D y J t— P • O A ftS • Switching Regulator • DC/DC Converter

VCO190-150T

Contextual Info: VCO Product Specification Model: VCO190-150T Rev: C Date: 4/21/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 100 150 200 MHz X Vdc X 15 16 Vdc X -35 ° to 85 ° C Remarks Tuning Voltage:

MIL-STD-39012

Abstract: DB-44 Male 152T-55 150T-11 151T-11 151T-110 151T-15 151T-31 151T-75
Contextual Info: Model 150T Model 151T Model 152T SmartStepTM Programmable Attenuators dc to 18.0 GHz dc to 4.0 GHz dc to 26.5 GHz Greatly Simplifies OEM & System Design! cells and a internal TTL interface. The attenuator elements located in the attenuator cell are created by a thin-film

IRF 860

Abstract: 5056B IRF 150a
Contextual Info: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

151F2FM

Abstract: 151F3FM 150MLAB160 150FC15 150GC15 150JC15 150LC15 150LD11 B2000 150MLAB180
Contextual Info: 150FC15 150GC15 150JC 15 150LC15 150LD11 150LD13 150MLAB160 150MLAB180 15 0MLAB2 0 0 150MLAB2 50 150NC15 150ND13 150QC15 150QD13 150TD13 150YD13 151F1FM 151F2FM 151F3FM 1 5 1R1FM ¡ | , 1 y v V I I 151R2FM 151R3FM 153PJA 180 153PJA 200 153PJA250 153PJLA60

JJ SMD diode

Abstract: smd diode marking JJ smd diode JJ DIODE marking VU smd marking KM DE10S3L J532 smd diode HB smd diode marking ex TC124T
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10S3L U n it: m m r W eigh t 0.326g T y p 30 V 10 A i 2 4 Feature 6.6 • SMD • Tj'=150t; • Tj= 150°C • ® V f =0.45V • L o w V f = 0.45V • P R R S M p y ^ V Î/X ÎS II • P r r s m R atin g

Contextual Info: Surface Mounting Device y b V T & ' f Schottky Barrier Diode # — F y - o m WÆ Twin Diode OUTLINE DIMENSIONS DF40SC3L Case : STO-220 10.2 = 02 n , 30V 40A Type No. ta tte r 2.4 ±0-a 40SC3L •SM D • T j 150TC Ü r n • Ê V f = 0 .4 5 V # P 0 .1 ±fil

BC212C

Abstract: Transistor BC212 BC212
Contextual Info: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e

Contextual Info: Model 150T Model 151T Model 152T SmartStepTM Programmable Attenuators dc to 18.0 GHz dc to 4.0 GHz dc to 26.5 GHz Greatly Simplifies OEM & System Design! cells and a internal TTL interface. The attenuator elements located in the attenuator cell are created by a thin-film

DB-44 Male

Abstract: 150T-110
Contextual Info: Model 150T Model 151T Model 152T SmartStepTM Programmable Attenuators dc to 18.0 GHz dc to 4.0 GHz dc to 26.5 GHz Greatly Simplifies OEM & System Design! cells and a internal TTL interface. The attenuator elements located in the attenuator cell are created by a thin-film

SG20SC6M

Abstract: XW marking 251 3j diode marking aj tw-104
Contextual Info: Schottky Barrier Diode Twin Diode • fttg H SG20SC6M Package OUTLINE ' Unit • mm FTO-220G W eight 1.54g Typ 60V 20A 4.5 Feature • Tj=150TC Tj=150°C • 7 J IÆ -J U K Full Molded High lo Rating-Small-RKG M ain Use • D C /D C Switching Regulator DC/DC Converter

2SA1725

Abstract: 2SC4511 FM20 2sa1725 transistor
Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C

AN5410

Contextual Info: LIN EA R MONOLITHIC IN TEG R A TED C IR C U IT S IC’s For TV Electrical Characteristics Ta= 25'C Deflection Signal AN 295 Processing Circuit Item Symbol VCC(VW)=13.*V Vcc (V,3-1«)=15.0V Ii3 = 170mA P D— 2.1W T opr=-20-+70t Tstg=-55~+150t Total Circuit Current

Contextual Info: Schottky Barrier Diode Axial Diode mtm D3S4M O U T L IN E U n it ! m m Package I AX14 W e igh t 1 .0 6 g T yp 40V 3A * Feature 7 26.5 • Tj=150°C • P r r s m Rating • T j=150T C • PRRSM ^y^ VÍ/X<SÍ¡E • D C /D C 3 • ÍÜ 5 1 . y - A . O A t l f s

Contextual Info: International IÔR Recti fi 6 f PD -5.05 6B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • G en eratio n 4 IG BT tech nology V c e s = 600 V • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200

Contextual Info: '>3 7 h V7 $ < 1 — K Schottky Barrier Diode ' K > Twin Diode OUTLINE DIMENSIONS SF10SC6 60V 10A n s • T j 150t • P r r s m 7 ’A 5 > i/i1 S E E • t g ^ J L Æ - h* •*«S B Œ 2KV «E •S R 8 S •DC/DC □ > ; -$ > •m m . i f - h . OAjSü

Contextual Info: y 3 y Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D25SC6M 60V 25A i a a •T j 150t: • P r r s m T’ / d jy i'x & S t • tc ^ J L Æ - ^ K ffl £ • s r s î • D C /D C n y A - S ’ •mm. y - A . o a * m Mfcfèn RATINGS A bsolute M axim um Ratings

Contextual Info: Document 159-1 ChipInductors – 0805HSSeries 2012 Ceramic body and wirewound construction provide highest SRFs available in 0805 size. Part Number1 0805HS-030T _ BC 0805HS-060T _ BC 0805HS-080T _ BC 0805HS-120T _ BC 0805HS-150T _ BC Inductance2 (nH) 3.3 @ 250 MHz

PJ 0519

Abstract: 150FC15 150GC15 150JC15 150LC15 150LD11 150LD13 150MLAB160 150MLAB180 150MLAB200
Contextual Info: 150G C 15 150FC 15 150JC 15 150LC 15 150LD 11 150LD 13 150M LA B 160 150M LA B 180 150N C 15 15 0MLAB2 0 0 1 50MLAB2 50 150Q D 13 150N D 13 150Q C 15 150TD 13 150Y D 13 151F1FM 151F2FM 151F3FM 1 5 1R 1FM 151R 2FM 151R 3FM 153P JA 180 153P JA 200 153P JLA 60

Contextual Info: 1.5-2.0GHz Chip Multilayer Coupler Model No. SLC-150T Equivalent Circuits Shape & Size 3.2 I I % D & (D & /Dot v / Ü1 ^ (D a >.0 Max. io (D (D In ESSSSgg (D Out (D Coupling @ Isolation Port A I I r 1 I 1 € © LO cn o -1 K—M v I M (D(D IO* Ground

SHINDENGEN DIODE

Contextual Info: s '> 3 7 ^ —K y7 v o m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S15SC4M Case : MTO-3P 40V 15A •T j 150tl T J ^ y 'y xU M . • P f îh s m • e jc t f 'J Æ U m & CD © •S R S 3 S • D C /D C 3 y J Ï - 9 "/-a . m oa«§§ •aïs, »k- ^ j« s

Contextual Info: Wcinschel NEW PRODUCT-PRELIMINARY DATA Model 150T Model 151T Model 152T dc to 18.0 GHz dc to 4.0 GHz dc to 26.5 GHz SmartStep PROGRAMMABLE STEP ATTENUATORS 1 WATT Greatly Simplifies OEM & System Design! Weinschel Corporation introduces a new generation of

Diode LT 410

Abstract: S30SC4MT
Contextual Info: Schottky Barrier Diode Twin Diode m ftm m S30SC4MT o u t lin e Unit: mm Weight 5.2k Typ Package : MTO-3PT 40V 30A Feature • Ti=150TC Tj=150°C • 9 jcö V J'Ö TU Small 8 jc High lo Rating Main Use Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation