J532 Search Results

J549-ND

Abstract: J655-ND J623-ND J649-ND J632-ND J545-ND J537-ND J621-ND J633-ND J537
Contextual Info: RF Connectors MCX Type FEATURES: • 30% Smaller than SMB • Rugged snap-on mating design • Captivated contact ELECTRICAL RATINGS: • Impedance: 50Ω • Frequency Range: 0-6GHz • Working Voltage at sea level: 335 VRMS; 250 VRMS J531-ND and J532-ND . MECHANICAL RATINGS: • Engage/Disengage Force: 5.6 pounds maximum engagement/8 pounds typical

jeida dram 88 pin

Abstract: KMCJ5324000
Contextual Info: 16 Mega Byte DRAM CARD J5324000 4M X 32 / 8M X 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range : The K M C J5324000 is the industry standard high tRAC tCAC IRC SAMSUNG'S advanced TSOP 4M x4 DRAM devices. J5324000 -6 60 ns 15 ns

DIODE 2FL 20U

Abstract: 2FL 20U
Contextual Info: Super Fast Recovery Diode Single Diode OUTLINE D2FL20U Unit.: mm Package : 2F Weight 0.16jf T yp a y —K v —» 2 0 0 V 1 ,5A ! Feature • /JvSÜSMD • S m all S M D •e y - fx • Low N o ise • trr~35ns • trr-3 5 n s 1 2FL 20U C a th o d e m a rk

Contextual Info: Schottky Barrier Diode Twin Diode mwm DF20NC15 o u tlin e 150V 20A Feature • SMD • SMD • SlR=0.4mA • Low lR=0.4mA • ÎÂ SÏËÎSËC LIC < 11 • Resistance for thermal run-away Main Use • Switching Regulator • DC/DC Converter • Home Appliance, Office Autom ation

Contextual Info: Super Fast Recovery Diode Single Diode w nnm o u tlin e DF10L60 P a c k a g e : S T O -2 2 0 60 0V 10A D a le c o d v * ^ U n it'm m Weight 15g T yp 10.2 (£> Control No Feature • SMD • SMD • SBEE • High Voltage • trr=50ns • trr-5 0 n s ¿TV"*

Contextual Info: C i n n l o n i d r i o G n h n t t k w R a r r / p r D i n r / o Single SBD SMD DE3S6M M SttEI CHARACTERISTIC DIAGRAMS « » I« ]# « Forward Voltage ttA jR tt- y m w t* » Peak Surge Forward Current Capability Forward Power Dissipation Tr IS T C tM A X tt

Contextual Info: Schottky Barrier Diode Single Diode D1FS4 Weight 0.0f>8tf Typ 40V 1.1A 'Cathode mark Feature • /JvguSMD • P rrsm 7V C 5 i fitBE 1 I • Small SMD • P r r s m Rating Main Use • • • • • D C /D C n y /i—? • * « . y - A . OAfiSSI U nit: mm

Contextual Info: Super Fast Recovery Diode Single Diode mtmm o u t lin e Package ! E-pack DE5L60 U n ii Im m 600V 5A Feature • SMD • High Voltage • trr=50ns SMD ia U E E trr=50ns • • • • • PFC - \s wm.OA FA I 51l 6 Dill*rtidi M a in U se PFC(Power Factor Correction)

Contextual Info: Schottky Barrier Diode Single Diode M2FH3 U n it ‘ m m Package : M2F Weight 0.072« T y p 30V 6A Feature • /JvguSMD •«« V f=0.36V • Small SMD • Super-Low Vf=0.36V • I { "J t U — iiJ S K ih • Reverse connect protection for DC power source

Contextual Info: FastRecover yDi ode Si ngl e OUTLI NE M1FL40U Uni tmm Package M1F ロット記号 （例） Date code カソードマーク Cathode mark ① U 00 00 ① ② 管理番号 （例） Control No. 品名略号 Type No. SMD ② 1.8 400V1. 5A Feat ur e 3.9 1.4 Hi

Contextual Info: FastRecover yDi ode Si ngl e OUTLI NE D3FK60 Uni tmm Package 2F 3FK 60 00 ① SMD t r r 100ns VF 品名略号 Type No. 4.0 カソードマーク Cathode mark 600V2. 1A ① ② ② ロット記号 （例） Date code 7.6 Feat ur e 2.8 Smal lSMD Hi ghVol t age

Contextual Info: FastRecover yDi ode Si ngl e OUTLI NE DE3L20UA Uni tmm Package Epack 200V3A ①④ 6.6 ② N.C. SMD ④ 3L2U ロット記号 （例） Date code Feat ur e 管理番号 （例） Control No. SMD LowNoi s e t r r =35ns 00 00 A 9.5 品名略号 Type No. t r r 35ns

Contextual Info: lit e : * ] il PB101M thru PB107M SEM ICONDUCTORS V O LT A G E RANGE 50 to 1000 V o lts C U R R EN T 1 AMP. SILICON BRIDGE RECTIFIERS 1.0 Ampere PBM 340 .300 D | A 8 .6 (7.6) .220 (5.6) 2 0 0 (5.1) " T FEATURES 1.0 M IN (25.4) 1.1 M IN (27.9) • R a tin g to 1 0 0 0 V PR V

SMD diode JB

Abstract: smd diode je
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Package : 1F D1FL20U Single Diode U n it-m m W e ig h t 0.058g Typ A y - K - y - i' 200V 1.1 A Feature • /JvPSMD • Small SMD • ß y -rx • Low Noise • trr=35ns • trr=35ns ®° Main Use N 5.0 1 Switching Regulator

Contextual Info: Super Fast Recovery Diode Twin Diode m tm OUTLINE Package : E-pack DE5LC40 U nit-m m W eight 0.326g T yp 400V 5A Feature • SMD • SMD • trr=50ns • trr= 50n s • Low Noise Main Use • S w itc h in g R egulator >DC/DC n y tK —S • D C /D C C onve rter

diode tfk s 220

Abstract: TFK BP 3 TFK 140 TFK S KJ SMD DIODE MARKING
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF10SC4M PyKLl°- ffl 40V m Unit-mm Weight 1.5g (Typ) 10.2 DA Feature a • SMD <SMD • Tj=150°C 1Tj=150°C 1 P rrsm Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use 1Switching Regulator

diode smd JS 8

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5SC4M Unit-mm Weight 0.326g Typ 40V 5A Feature >SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E Main Use » D C /D C o

D 92 M - 02 DIODE

Abstract: JS marking diode c 92 M - 02 DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5PC3 Unit-mm Weight 0.326g Typ 30V 5A Feature • SM D • SMD • î 2 ® V f =0.4V • U ltra-Low V f=0.4V • i J 'S = À l; j S î§ M • High lo R a tin g -S m all-PK G Main Use *y î ÿ x U - J i f ê K i h

DIODE JS.9 smd

Contextual Info: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF40SC4 u^hàLÌ°- M 40V m U nit-m m W eight 1.5g (T y p ) 10.2 DA Feature a • SMD < • Tj=150°C 1Tj=150°C • P rrsm 1 P rrs m Rating SMD 1 High lo Rating -Small-PKG 4.7 m Main Use

smd diode marking UJ

Abstract: smd marking wm de5l60 smd diode Uj
Contextual Info: Super Fast Recovery Diode mfm OUTLINE Single Diode DE5L60 Unit-mm Package : E-pack W eight 0.326g Typ 600V 5A Feature •S M D • SMD 1 r a lîE E • High Voltage •trr=50ns • trr=50ns Main Use - PFC • PFC(Power Factor Correction) ' Switching Regulator

smd ic marking SH

Contextual Info: Schottky Barrier Diode Twin Diode M fm DF30JC10 O UTLINE Unit-mm Weight 1.5g Typ Package : STO-220 PyhfLig-(ffl) 10.2 100V 30A Feature • SM D • SMD • • (glR=1.0mA • Low Ir =1 .0mA • S iy R T È ÎE iË c I l_y (<_ <L Ui • Resistance for thermal run-away

smd diode code TY

Abstract: cm4060
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package I M1F M1FS6 60V 1.2A U nit-m m W eight 0.027g Typ - fty - F v - ? Cathode mai' Feature • /J v S U S M D 1Small SMD • Tj=150°C •<SV f=0.58V 1Tj=150°C 1 Low Vf=0.58V • P r r s m 7 7A ' 5 > ^ i S I Ì E

TSL1112

Contextual Info: 1/2 ラジアルリードインダクタ（コイル） 電源系 RoHS指令対応製品 TSL シリーズ TSL1112 特長 ●電源系に最適な低Rdc大電流タイプです。 ●外装は難燃ケース（UL グレード 94V-0）を採用し、寸法精度に