1500V 3A DIODE Search Results

diode 1500V

Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

diode marking e41

Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

diode marking e41

Abstract: diode 3A 1500V e41.15 ERE41-15 1500V 3A diode
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

Contextual Info: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

2SD1554

Abstract: 2sd1554 equivalent TOSHIBA DIODE GLASS MOLD 00l3
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1554 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: . High Voltage l&5±0t5 >3.6±aS : VCBO=1500V S.0±0l3 . Low Saturation Voltage: VcE sat =5V(Typ.)(Ic=3A,Ib =0.8A) . High Speed : tf = 1. 0|is(Max.) (I(;p=3A, lBl(end)=0.8A)

2SD1426

Abstract: le-200mA
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1426 _ Unit in mm 1 & 5 ± 0 .5 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0 3 .6 ± a z 1.5 FEATURES: . High Voltage : Vcgo=1500V . Low Saturation Voltage : VcE sat =5V(Typ.) (Ic=3A, IB=0.8A) . High Speed : tf=l.0.as (Max. ) (Icp=3A, Ifll(end)=0.8A)

IXTJ6N150

Contextual Info: IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series • Features External Dimensions Unit: mm ●Gate trigger current: IGT=10mA max 13.0 min ●Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) ±0.2 4.2 C 0.5 2.8 ±0.2 φ ±0.2 3.3 A 0.2

IXTH3N150

Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M

2SD869 TOSHIBA

Abstract: 2SD869
Contextual Info: 2SD869 SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0Z5.OW.X. FEATURES: 021.OUAX • High Voltage : VCBq =1500V • Low Saturation Voltage : VCE sat =5v (TyP-) +0.09 jZL0— 0.03 (Ic=3A, Ib =0.8A)

IXTH3N150

Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH3N150

Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH3N150

Abstract: 3N150 T3N1 Vdss 1500V
Contextual Info: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

BUh315d

Abstract: NPN Transistor 1A 400V npn transistors 400V 1A NPN Transistor 1.5A 400V Transistor buh315d
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUH315D DESCRIPTION •High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and monitors.

2SD1632

Abstract: ic3a
Contextual Info: SavantIC Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

2SD1441

Contextual Info: SavantIC Semiconductor Product Specification 2SD1441 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

2SD1441

Contextual Info: Product Specification www.jmnic.com 2SD1441 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・High speed switching ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications

2SD1846

Contextual Info: SavantIC Semiconductor Product Specification 2SD1846 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·Horizontal deflection output applications PINNING

2SD1632

Contextual Info: Inchange Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High voltage ,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications

2SD904

Abstract: tv ic equivalent TV horizontal ic voltage
Contextual Info: SANYO SEMICONDUCTOR 2SD904 NPN Triple Diffused Mesa For Horizontal Deflection With Damper Diode Silicon Transistor of 20" Color TV Absolute Maximum Eatings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current

2SD1729

Abstract: diode 3A 1500V
Contextual Info: SavantIC Semiconductor Product Specification 2SD1729 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

2SD1729

Contextual Info: Inchange Semiconductor Product Specification 2SD1729 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications