IXTH3N150 Search Results

IXTH3N150 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH3N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 3A TO-247	Original	PDF		4

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IXYS Corporation IXTH3N150 MOSFET N-CH 1500V 3A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH3N150	Tube	165		1	1 $14.68 10 $14.68 100 $8.98 1000 $7.59 10000 $7.59	Buy Now
Mouser Electronics	IXTH3N150		69			1 $9.70 10 $8.74 100 $8.74 1000 $8.68 10000 $8.68	Buy Now
TTI	IXTH3N150	Tube	300		30	1 - 10 - 100 $8.68 1000 $8.51 10000 $8.51	Buy Now
TME	IXTH3N150				1	1 $9.67 10 $9.67 100 $9.47 1000 $9.47 10000 $9.47	Get Quote
IBS Electronics	IXTH3N150				30	1 - 10 - 100 $10.81 1000 $10.64 10000 $10.64	Buy Now
Littelfuse Inc IXTH3N150 Discmosfet N-Ch Std-Hivoltage To-247Ad/ Tube \|Littelfuse IXTH3N150
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTH3N150	Bulk			300	1 - 10 - 100 - 1000 $9.78 10000 $9.78	Buy Now
RS	IXTH3N150	Bulk		8 Weeks	30	1 - 10 - 100 $11.16 1000 $10.81 10000 $10.81	Get Quote

IXTH3N150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTH3N150 Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150	PDF
IXTH3N150 Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M	Original	IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150	PDF
IXTH3N150 Abstract: 3N150 T3N1 Vdss 1500V Contextual Info: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 T3N1 Vdss 1500V	PDF
IXTH3N150 Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150	PDF