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IXTH3N150 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH3N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 3A TO-247	Original	PDF		4

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IXYS Corporation IXTH3N150 Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTH3N150				1	1 $14.38 10 $10.67 100 $9.53 1000 $8.58 10000 $8.58	Get Quote
Mouser Electronics	IXTH3N150		1			1 $18.75 10 $11.97 100 $11.97 1000 $10.13 10000 $10.13	Buy Now
TTI	IXTH3N150	Tube	90		30	1 - 10 - 100 $10.61 1000 $9.13 10000 $8.95	Buy Now
Littelfuse Inc IXTH3N150 Discmosfet N-Ch Std-Hivoltage To-247Ad/; \|Littelfuse IXTH3N150
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXTH3N150	Bulk			300	1 - 10 - 100 - 1000 $9.41 10000 $8.82	Buy Now
	IXTH3N150	Bulk			1	1 $18.19 10 $14.30 100 $10.40 1000 $9.07 10000 $8.75	Buy Now
RS	IXTH3N150	Bulk		8 Weeks	30	1 - 10 - 100 $14.49 1000 $13.34 10000 $13.34	Get Quote
Onlinecomponents.com	IXTH3N150					1 - 10 - 100 $15.79 1000 $7.54 10000 $7.54	Buy Now

IXTH3N150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTH3N150 Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixth3n150 o-247 100ms 3n150 +10-26-10-a	PDF
IXTH3N150 Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M	Original	ixth3n150 o-247 100ms 3n150 +10-26-10-a	PDF
IXTH3N150 Abstract: 3N150 T3N1 Vdss 1500V Contextual Info: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixth3n150 o-247 100ms 3n150 +30-26-10-a t3n1 vdss 1500v	PDF
IXTH3N150 Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixth3n150 o-247 100ms 3n150 +10-26-10-a	PDF