150 FET Search Results

VN66AF

Abstract: VN67AF VN46AF vn89af VN88AF 2N6658 IN400 VN46 IRF620 IRF630
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150

Contextual Info: User's Guide SLUUA08A – March 2013 – Revised April 2013 bq2425xEVM-150, Single-Cell Li-Ion Switch-Mode Charger This user's guide describes the characteristics, operation, and use of the bq24250EVM-150, bq24251EVM-150, and bq24257EVM-150 evaluation modules EVM . These EVMs enable test and

irf540 TTL

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

RELAY 1ZS

Abstract: VN1706D IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 // 1 / 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

VN88AF

Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

2SK1578

Abstract: 25K1578
Contextual Info: Ordering number: EN 4178A _ N-Channel2SK1578 Junction FET Capacitor Microphone Applications 150 B 240 210 C 350 320 D 480 unit V mA mA mW °C °C max unit V -1.5 V 1-iA mS pF pF *o o 100 A 170 -2 0 10 1 100 150 -5 5 to +150 min typ -2 0 -0 .2 -0.6

transistor BC 584

Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Contextual Info: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4

TL2012

Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
Contextual Info: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

PTF141501E

Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital

Hitachi 2SJ

Abstract: Hitachi DSA002752 2SJ574
Contextual Info: 2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B Z 3rd.Edition. June 1999 Features • • • Low on-resistance RDS = 1.1 Ω typ. (VGS = -10 V , ID = -150 mA) RDS = 2.2 Ω typ. (VGS = -4 V , ID = -150 mA) 4 V gate drive device. Small package (MPAK)

Contextual Info: KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER S O T -2 3 • NF = 2.5 dB TYP •IY fsI > 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic Rating Unit -1 8 10 200 150 —55~ 150 V mA mW °C °C Symbol Gate-Drain Voltage Gate Current

Contextual Info: Ordering number: EN4499 SA\YO j _2SK2074 N-Channel Junction Silicon FET No.4499 High-Frequency Low-Noise Amp Applications 15 -15 10 50 300 150 -5 5 to +150 min typ Iq ——10/xA,V[ g = 0 —15 Vgs = - io v ,v DS = o Vds=5V,I d =1001oA -0.3 -0.6

IXTK80N25

Abstract: 80N25 megamos
Contextual Info: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

SM320VC33

Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

SM320VC33

Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

SM320VC33

Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

809-80

Abstract: SM320VC33
Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

SM320VC33

Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

SM320VC33

Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

SM320VC33

Abstract: diodes 10-25 h3 TMS 320 C 6X processor datasheet 320VC33 SMJ320VC33 VC33
Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

SM320VC33

Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

320vc33

Abstract: SM320VC33 65610 SMJ320VC33 VC33
Contextual Info: SM320VC33, SMJ320VC33 DIGITAL SIGNAL PROCESSOR SGUS034E - FEBRUARY 2001 - REVISED OCTOBER 2002 D High-Performance Floating-Point Digital D Signal Processor DSP : - SM/SMJ320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations Per Second (MFLOPS)

SPRU031

Abstract: 10X40 TMS320VC33 74as1004 mpsd TMS320VC33, instruction set
Contextual Info: TMS320VC33 DIGITAL SIGNAL PROCESSOR SPRS087E - FEBRUARY 1999 - REVISED JANUARY 2004 D High-Performance Floating-Point Digital D D D D D D D D D D Signal Processor DSP : - TMS320VC33-150 - 13-ns Instruction Cycle Time - 150 Million Floating-Point Operations