14E NPN Search Results

14E NPN Result Highlights (5)

Part	Manufacturer	Description	Download
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5810	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini	Datasheet
TTC019	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini	Datasheet

14E NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
JB marking transistor Abstract: transistor marking JB MMBT5550 marking JB Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D \| 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic	OCR Scan	MMBT5550 10/iA, JB marking transistor transistor marking JB marking JB	PDF
MMBT2222 Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T \| NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current	OCR Scan	1b414E 0007253M MMBT2222 lo-10mA,	PDF
2N6515 Abstract: 2N6516 Contextual Info: SAMSUNG SEMICONDUCTOR INC 2N6516 14E D \| 7^4142 00071^ 1 \| NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: Vcto=300V * Collector Dlssipatioh: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic	OCR Scan	2N6516 625mW 2N6515 T-29-21 100mA, 20MHz 2N6515	PDF
J551 Abstract: TS 4142 MPSH20 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1 Contextual Info: .SAMSUNG SEM ICO NDUCTOR INC 14E D \| TTbMlME 0007304 S J MPSH20 7^3/- NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current	OCR Scan	MPSH20 T-31-Ã 100MHz J551 TS 4142 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1	PDF
2929 transistor Abstract: MMBT6427 MMBTA14 SOT-23 J Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D \| 7^4142 OGt^eT! t \| NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	0075T1 MMBTA14 MMBT6427 T-29-29 OT-23 100jjA, 2929 transistor SOT-23 J	PDF
Marking KJo SOT23 Abstract: 564 transistor MMBTA43 transistor 564 marking 564 sot23-6 Contextual Info: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 14E D \| 7=11,4142 00072^4 1 \| NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	MMBTA43 OT-23 100hA 100hA, MMBTA43_ Marking KJo SOT23 564 transistor transistor 564 marking 564 sot23-6	PDF
MARKING BL Abstract: fS 4142 transistor 513 MMBC1622D6 Contextual Info: SAMSUNG S EMICONDUCTOR INC MMBC1622D6 14E D ^7Tt.4145 0007542 4 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Cotector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	MMBC1622D6 100mA, 100MHz MARKING BL fS 4142 transistor 513	PDF
BCW32 Abstract: MMBT5088 T2R marking marking ASE Contextual Info: SAMSUNG SEMICONDUCTOR INC BCW32 14E D \| 7 ] b i m e 0007201, 0 \| NPN EPITAXIAL SILICON TRANSISTOR T-2H- ,= 1 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	BCW32 7U4142 000720b MMBT5088 SOt-23 10fiA, BCW32 T2R marking marking ASE	PDF
PN2222A EQUIVALENT Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS2222A 14E D 0 0073 06 \| 8 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	MPS2222A T-29-21 625mW MPS2222 PN2222A EQUIVALENT	PDF
MMBTA06 Abstract: MPSA05 Transistor driver TRANSISTOR MARKING FA Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA06 14E D \| 7 c! b 4 1 4 a 0007531 fi \| NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Ennitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	MMBTA06 MPSA05 OT-23 100JJA, 100mA 100mA, 100mA 100MHz Transistor driver TRANSISTOR MARKING FA	PDF
KSA1182 Abstract: KSC2859 Contextual Info: SAMSUNG SEMICONDUCT OR INC KSC2859 14E D \| 7^4142 OOGLI?! 1 \| f.zy NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SO T-23 • Complement to KSA1182 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol ColleCtor-Base Voltage CoHector-Emftter Voltage	OCR Scan	KSC2859 KSA1182 OT-23 100mA Jo03l T-29-15 KSA1182	PDF
MPS8098 Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS8098 14E D jT 'ib M m a 0007337 M \| NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage	OCR Scan	MPS8098 625mW T-29-21 100/iA, 100MHz 300ms,	PDF
Darlington transistor T7 27 Abstract: Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA25 14E O Jj TTbMlMt? 0007355 O \| NPN EPITAXIAL - T ^ SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emltter Voltage: Vc*»=40V • Collector Dissipation: Pc max =625mW A B SO LU TE MAXIMUM RATINGS (T,=25°C)	OCR Scan	MPSA25 625mW Darlington transistor T7 27 Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho	PDF
KSC2749 Abstract: npn transistors 400V 1A To92 NPN TO92 400V Contextual Info: SAMSUNG SEM ICONDUCTOR INC KSC2749 14E 0 \| 7*^4142 0007573 5 \| NPN EPITAXIAL SILICON TRANSISTOR T - Ì 3 - 3 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic Rating Symbol Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	KSC2749 GQG77fe KSC2749 npn transistors 400V 1A To92 NPN TO92 400V	PDF

TS 4142 Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142 Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage	OCR Scan	0075T4 T-33- KSD288 TS 4142 LC04A KSD73 100V transistor npn 5a ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142	PDF
304 TRANSISTOR Abstract: transistor ksr1010 KSR1010 KSR2010 Inverter mma 300 Contextual Info: SAMSUNG SEMICONDUCTOR I N C T ^ W f 14E KSR1010 D I 7^4142 0007033 b \| NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R =10K i)	OCR Scan	INCT-35 KSR1010 KSR2010 INCy-35^ 304 TRANSISTOR transistor ksr1010 KSR2010 Inverter mma 300	PDF
la 4142 Abstract: MMBT5088 MMBT6429 Scans-0014323 Contextual Info: SAMSUNG SEMI C ONDU CT OR INC 14E MMBT6429 ' D § 7 ^ t , 41 42 0007507 4 \| NPN EPITAXIAL SILICON TRANSISTOR : " AMPLIFIER TRANSISTOR r'r-avfl" SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage	OCR Scan	00072fi7 MMBT6429 MMBT5088 OT-23 100mA, 100MHz la 4142 Scans-0014323	PDF
equivalent of SL 100 NPN Transistor Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR" Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage	OCR Scan	KSD5005 GQG77fe equivalent of SL 100 NPN Transistor Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"	PDF
SE 135 Abstract: SE135 ic 74142 E10A Contextual Info: S AM S UNG SEMICONDUCTOR INC MMBC1623L5 14E D 7^ 4142 0007541 7 \| NPN EPITAXIAL SILICON TRANSISTOR T - - A 9 - (<? AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C C haracteristic Collector-Base Voltage Collector-Emitter Voltage .Emitter-Base Voltage	OCR Scan	MMBC1623L5 OT-23 MMBC1623L3 SE 135 SE135 ic 74142 E10*A	PDF
2929 transistor Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic	OCR Scan	00073SM MPSA26 T-29-29 625mW MPSA25 MPSA62 100/iA, 100mA, 2929 transistor mpsa82 MPSA45 MPSA55 MPSA63 I0204 625MW	PDF
MPS2222 Abstract: MPS2222A PN2222A Contextual Info: SA MS UN G SEMICONDUCTOR INC MPS2222A 14E D \| 7*14,4142 00D730fl 8 \| NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Coilector-Emitter Vtaltaga: V«o=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	00D730fl MPS2222A 625mW MPS2222 T-29-21 150mA, 500mA, PN2222A	PDF
Contextual Info: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage	OCR Scan	MMBR5179 OT-23	PDF
Contextual Info: SAMSUNG SEMI CONDUCTOR INC MMBT6429 ' 14E D § 7^t,4142 0007507 4 \| NPN EPITAXIAL SILICON TRANSISTOR " r T -.a • c\ w^ : AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage	OCR Scan	MMBT6429 OT-23 MMBT5088	PDF
Contextual Info: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)	OCR Scan	MJE3055T	PDF

14E NPN Search Results

14E NPN Result Highlights (5)

14E NPN Datasheets Context Search

JB marking transistor

MMBT2222

2N6515

J551

2929 transistor

Marking KJo SOT23

MARKING BL

BCW32

PN2222A EQUIVALENT

MMBTA06

KSA1182

MPS8098

Darlington transistor T7 27

KSC2749

TS 4142

304 TRANSISTOR

la 4142

equivalent of SL 100 NPN Transistor

SE 135

2929 transistor

MPS2222