145M Search Results

CBMF1608T4R7M

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBMF1608T4R7M Features Item Summary 4.7 H(±20%), 145mA, 470mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

74LVX74

Abstract: 74LVX74M 74LVX74MTR 74LVX74TTR TSSOP14
Contextual Info: 74LVX74 LOW VOLTAGE CMOS DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR 5V TOLERANT INPUTS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED : fMAX = 145MHz (TYP.) at VCC = 3.3V 5V TOLERANT INPUTS INPUT VOLTAGE LEVEL : VIL=0.8V, VIH=2V AT VCC=3V LOW POWER DISSIPATION:

Contextual Info: Ordering number : EN8758B MCH6663 Power MOSFET http://onsemi.com 30V, 1.8A, 188mΩ, –30V, –1.5A, 325mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance

SSM6N25TU

Contextual Info: SSM6N25TU シリコンNチャネルMOS形 U-MOSⅢ 東芝電界効果トランジスタ SSM6N25TU 単位: mm ○ 高速スイッチング 2.1±0.1 • オン抵抗が低い。 1.7±0.1 Ron = 145mΩ (max) (@VGS = 4.0 V) 項 目 記 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧

Contextual Info: Ordering number : EN*A2280 MCH6661 Advance Information http://onsemi.com N-Channel Power MOSFET 30V, 1.8A, 188mΩ, Dual MCPH6 Features • ON-resistance Nch : RDS on 1=145mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : EN8758A MCH6663 Power MOSFET http://onsemi.com 30V, 1.8A, 188mΩ, –30V, –1.5A, 325mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance

42N50

Abstract: 42N50P2
Contextual Info: Advance Technical Information IXFH42N50P2 IXFT42N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Ordering number : ENA2280A MCH6661 N-Channel Power MOSFET 30V, 1.8A, 188mΩ, Dual MCPH6 http://onsemi.com Features • ON-resistance Nch : RDS on 1=145mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter

ixfh50n60

Abstract: 50n60p IXFT50N60P3 IXFQ50N60P3 ixfh50n60p3 50N60P3 DS100310 N-channel MOSFET to-247 50a 50n60 N-channel MOSFET to-247 50a 600v
Contextual Info: Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol

APC UPS 700 CIRCUIT DIAGRAM

Abstract: APC UPS CIRCUIT DIAGRAM ONET1141L
Contextual Info: ONET1141L www.ti.com SLLSEB7 – MAY 2012 11.3 Gbps Modulator Driver Check for Samples: ONET1141L FEATURES 1 • • • • • • • • Digitally Selectable Output Amplitude up to 2.0VPP Single-Ended Digitally Selectable Bias Current up to 145mA Source

Contextual Info: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Optimum for high-density mounting in small packages • Low on-resistance: Unit: mm (max) (@VGS = 2.5 V) 1.7±0.1 Ron = 145m (max) (@VGS = 4.0 V)

Contextual Info: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications Low on-resistance: 1.2±0.05 (max) (@VGS = 2.5 V) Ron = 145m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N24TU High Speed Switching Applications Unit: mm Low on-resistance: 2.1±0.1 Ron = 145mΩ (max) (@VGS = 4.5 V) 1.7±0.1 Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2518T150M Features Item Summary 15 H(±20%), 145mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1007/2518

74LVX74

Abstract: 74LVX74MTR 74LVX74TTR TSSOP14
Contextual Info: 74LVX74 LOW VOLTAGE CMOS DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR 5V TOLERANT INPUTS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: fMAX = 145MHz (TYP.) at VCC = 3.3V 5V TOLERANT INPUTS INPUT VOLTAGE LEVEL: VIL=0.8V, VIH=2V AT VCC=3V LOW POWER DISSIPATION:

MW500-1343

Contextual Info: Voltage Controlled Oscillators MW500-1343 135MHz to 145MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 135MHz to 145MHz 1/11 V 12 +/- 3 dBm 10 kHz Offset -112 typ dBc/Hz 100 kHz Offset -132 (typ) dBc/Hz Frequency Pushing 3 MHz/V Frequency Pulling

Contextual Info: • tj SMTûET OGlTim 1D7 ■ MITSUBISHI RF POWER MODULE M57719L 135-145MHz, 12.5V, 14W, FM MOBILE RADIO B L O C K DIAG RA M PIN : Rn © VCCI VCC2 ® Po ®GND : RF INPUT : 1st. DC SU P P L Y : 2nd. DC S U P P L Y : RF O UTPUT : FIN A B SO LU T E MAXIMUM RA TIN G S Tc = 2 5 lC unless otherwise noted

PL102-10TC-R

Abstract: PL102-10SC-R
Contextual Info: Low Skew Output Buffer FEATURES PIN CONFIGURATION • Frequency Range: − 15 to 170MHz @ 3.3V − 15 to 145MHz @ 2.5V  Internal Phase Locked Loop Allows Spread Spectrum Modulation on Reference Clock to Pass to Outputs.  Zero Input to Output Delay  Less Than 700ps Device to Device Skew

AIV-0001A

Abstract: FE7025O280K1075 CON202 philips lcd
Contextual Info: HR IP6L200001 INVERTER ORIGINAL REFER. EQUIVAL. AIV-0001A FE7025O280K1075 Dimensiones / size : 156mm x 145mm 1 15V Conector Control / Control Connector CON202 2 3 4 5 6 7 8 9 10 15V GND GND 5V 5V GND N.C. on-off Br.A LCD panel manuf. LG-PHILIPS Marca / Brand

Contextual Info: 48E24D Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 24 Load Current Max. (A)145m Drop-Out Volt Max. P(D) Max. (W)288m Nom. Supp (V)48 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70

Contextual Info: Adapters Vinyl Barrel Insulated • Brazed Seam • For Blade-Type Terminal Blocks PANDUIT Part Number Wire Range DV18-145M-C DV14-145M-C Color Code Max. Ins. 22-18 Red 16-14 Blue Dimensions In. Std. Pkg. Qty. Std. Ctn. Qty. Bulk Pkg. Qty. Bulk Ctn. Qty.

ixfn56n90p

Abstract: ixfn*56N90P 56N90P 56N90
Contextual Info: IXFN56N90P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 900V 56A Ω 145mΩ 300ns miniBLOC E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR

SSM3J110TU

Contextual Info: SSM3J110TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications Unit: mm Low on-resistance: 2.1±0.1 Ron = 145mΩ max (@VGS = −2.5 V) 1.7±0.1 Ron = 94mΩ (max) (@VGS = −4.0 V) Lead(Pb)-free 2.0±0.1

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB3218T680K Features Item Summary 68 H(±10%), 145mA, 1207 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1207/3218