1420M Search Results

Contextual Info: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1420MHz Part No: MP03039 Model: TA1077A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V

MDR605C

Abstract: 2143MHz
Contextual Info: COMPONENTS FOR WIRELESS SOLUTIONS Multi-layered dielectric filter Frequency MHz P/N Dimensions(mm) Attenuation (dB) min I.L. (dB) min L W T 2.0 2.5 1.5 2.0 2.5 1.5 35 at 1420MHz MDR704F •*1 8 8 4 -1 9 2 0 Top PHS 1.2 10 at 1660MHz 30 at 1660MHz -y -f il

Contextual Info: Voltage Controlled Oscillators MW500-1192 1420MHz to 2470MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1420MHz to 2470MHz 0.5/12 V 10 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -90 typ dBc/Hz

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1420MHz Part No: MP02013 Model: TA0890A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V

Contextual Info: Specification for an SMD Low Profile LC Filter MtronPTI P/N: LF9392-002 I. General & Electrical Requirements: Center Frequency FON : 1920MHz 1.0dB Passband: 1420MHz to 2420MHz, minimum Insertion Loss (@ the peak of transmission within the 1.0dB Passband): ≤ 2.5dB

Contextual Info: Voltage Controlled Oscillators MW500-1192R 1420MHz to 2470MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1420MHz to 2470MHz 0.5/12 V 10 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -90 typ dBc/Hz

1420MHz

Abstract: TA0890A
Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1420MHz Part No: MP02013 Model: TA0890A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V

transistor 91 330

Contextual Info: PT7711—5V 20-A Programmable Integrated Switching Regulator SLTS087A Revised 6/27/2002 Features • 5V Input Voltage • 20-A Output Current • 5-bit Programmable Output: 1.3V to 3.5V • High Efficiency (93%) • Differential Remote Sense • Over-Current Protection

K4T51043QB-GCCC

Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
Contextual Info: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing

PT7711

Abstract: PT7712 PT7713 PT7714 PT7715 PT7744 SMD Transistors code
Contextual Info: PT7713—3.3V 20-A Programmable Integrated Switching Regulator SLTS149A Revised 6/27/2002 Features • 3.3V Input Voltage • 20-A Output Current • 4-bit Programmable: 1.8V to 2.55V (50mV Steps) • High Efficiency (90%) • Differential Remote Sense • Over-Current Protection

PT7711

Abstract: PT7712 PT7713 PT7714 PT7715 PT7744
Contextual Info: PT7712—3.3V 20-A Programmable Integrated Switching Regulator SLTS088A Revised 6/27/2002 Features • 3.3V Input Voltage • 20-A Output Current • 4-Bit Programmable Output: 1.3V to 2.05V • High Efficiency (87%) • Differential Remote Sense • Over-Current Protection

CSR BC5

Abstract: 5150-5350MHz BRF6150 BRF6300 csr bc4 CSR BC4 bluetooth 2300-2690MHz BC5 CSR JIS K 5400 212B
Contextual Info: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the

Contextual Info: ADS7863 www.ti.com SBAS383E – JUNE 2007 – REVISED JANUARY 2011 Dual, 2MSPS, 12-Bit, 2 + 2 or 3 + 3 Channel, Simultaneous Sampling ANALOG-TO-DIGITAL CONVERTER Check for Samples: ADS7863 FEATURES DESCRIPTION • • • The ADS7863 is a dual, 12-bit, 2MSPS,

MT47H128M8CF-25

Abstract: 8 resistor array 10k smd 103
Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

DDR2-400

Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4ABFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EBE10AD4AGFA-6E-E

Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AGFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR2-400

Abstract: DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E
Contextual Info: PRELIMINARY DATA SHEET 256MB Registered DDR2 SDRAM DIMM EBE25RC8AAFA 32M words x 72 bits, 1 Rank Description Features The EBE25RC8AAFA is a 32M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 9 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package. Read and

DDR2-533

Abstract: EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10RD4ABFA 128M words x 72 bits, 1 Rank Description Features The EBE10RD4ABFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.

DDR2-533

Abstract: EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4AAFA 256M words x 72 bits, 1 Rank Description Features The EBE20RE4AAFA is a 256M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.

EDE1104AASE

Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized

DDR2-400

Abstract: DDR2-533 EBE11ED8AEFA-4A-E EBE11ED8AEFA-5C-E
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AEFA 128M words x 72 bits, 2 Ranks Description Features The EBE11ED8AEFA is 128M words × 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)

Contextual Info: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns

Contextual Info: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns