140M 3N Search Results

KM68257BP

Abstract: KM68257Bp-20 KM68257BJ25
Contextual Info: PRELIMINARY KM68257B CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM68257BP/J-15: 150mA (max.) KM68257BP/J-20: 140m A (max.)

AAEA2

Abstract: KM6865B-12 km6865b
Contextual Info: CMOS SRAM KM6865B 8,192 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6865B-12 :140m A (max.) KM6865B-15 : 130mA (max.)

KM64258BJ-20

Abstract: KM64258BJ-15
Contextual Info: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140m A (max.)

ADC-318

Abstract: 120 wave filter 8 pin 4v power supply converter Delay Lines murata 140M ADC-318A 8 bit ttl ADC
Contextual Info: ADC-318, ADC C ADC-318A 8-Bit, 8-Bit, 120 120MHz 0MHz an and nd 140M 140MHz MHz Full-Flash A/D Converter OBSOLETE PRODUCT Contact Factory for Replacement Model FEATURES Low power dissipation n 960mW W max. TTL compatible output Diff./Integral nonlinearity (±½LSB max.)

Contextual Info: TOSHIBA TC74AC377 Octal D-Type Flip-Flop Features: • High Speed: fMAX = 140M H z typ. at Vcc = 5V • Low Power Dissipation: lcc = 8nA (max.) at Ta = 2 5 CC • High Noise immunity: VN,H = V N!L = 28% V cc (min.) • Symmetrical Output Impedance: ll0Hl = Iol = 24mA

Contextual Info: CMOS SRAM KM6466B 16,384 WORD x 4 Bit CMOS Static RAM With OE GENERAL DESCRIPTION FEATURES • Fast Access Time: 12, 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6466B-12 :140m A (max.) KM6466B-15 :130m A (max.)

batery

Abstract: KM6465B-12 KM6465B-15 KM6465B-20 KM6465B-25
Contextual Info: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e: 12, 15, 20, 25ns max. • Lo w P ow er D issipatio n S tandby (TTL) : 35m A (max.) (CMOS): 1m A (max.) ' • Operating KM6465B-12 :140m A (max.)

100C

Abstract: 100-C09 140M
Contextual Info: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings

100C

Abstract: 100-C09 140M
Contextual Info: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings

Contextual Info: TOSHIBA TC74AC823 9-Bit D-Type Flip-Flop with 3-State Output Features: • High Speed: fMAX = 140M Hz typ. at Vcc = 5V • Low Power Dissipation: lcc = 8^A (max.) at • High Noise Immunity: V N,H = V N!L = 28% V cc (min.) • Symmetrical Output Impedance: ll0Hl = Iol = 24mA

100C CONTACTOR ROCKWELL

Abstract: 100-C09 103S-103 100-c30 100C 140M sc 107 b
Contextual Info: 1 2 3 4 5 6 7 8 A 7 BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings

100C

Abstract: 100-C09 140M 41053
Contextual Info: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR 2 nd CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings

Contextual Info: KM64258C CMOS SRAM 64K x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 1 2 .1 5 ,20ns M ax. • Low Power D issipation Standby (TT L) : 40m A(M ax.) (CM O S) : 2m A(M ax.) O perating KM64258G -1 2 : 1S0mA(M ax.) KM 64258C -1 5 : 140m A(M ax.)

MPS9680

Abstract: transistor 2N4258 2N2002 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178

2N907 PNP

Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178

2N2672

Abstract: 2SA144 2N1178 2N2654 2SA234 2SA235 2N1515 AH-61 transistor 2sA144 2SA435
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol

transistor 2sA144

Abstract: 2SA234 2SA144 2SA235 TRANSISTOR r73 2N2672 2SA135 2N1516 2N2654 dm-58
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

SOJ32-P-300

Abstract: DIP32-P-300 TC55329 J15-20
Contextual Info: TOSHIBA TC55329AP/AJ-15/20/25/35 SILICON GATE CMOS 32,768 WORD x 9 BIT CMOS STATIC RAM D e s c rip tio n The TC55329AP/AJ is a 294,912 bit high speed CMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

3N33

Abstract: J460 2N792 2SC286 BC129 BC130C 2sc288 2SC160 ST1694 BF220
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol % ' Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others.

thermistor 140M

Abstract: 140M Thermistor rockwell E3 e3 overload relay 103t 100C 100-C09 100-C30 140M
Contextual Info: 1 2 3 4 5 6 7 8 A Trip Contacts CB 1 CB (2) 1 st CHAR 2 nd CHAR Aux Contacts Trip Contacts CB (1) X - - - - X - - - - C 1 NO + 1 NC - 13 - 14 21 - 22 B K,L,M,N,Q 1 NO - 13 - 14 - D 2 NO - 13 - 14 23 - 24 C K,L,M,N,Q 1 NO + 1 NC - 13 - 14 21 - 22

Contextual Info: CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0

Contextual Info: CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0

140-CMN

Abstract: 100C 100-C09 140M
Contextual Info: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings 2 nd CHAR Aux Contacts Trip Contacts CB (1) CB (2) 1 st CHAR

EC27

Abstract: 16113
Contextual Info: EC27 Series EC27 • Crystal Clock Oscillators • LVCMOS Output • +2.5V Supply Voltage • Tri-State Output Function • 4 Pad Ceramic SMD Package • Low Stand-by Current • RoHS Compliant Pb-Free H 1.6 L 7.0 W 5.0 OSCILLATOR ELECTRICAL SPECIFICATIONS