13G1B Search Results

Contextual Info: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

Contextual Info: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)

Contextual Info: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application  Small package : SC-59  Low forward voltage : VF 3 = 0.9V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance

Contextual Info: TOSHIBA 1SS250 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS250 Unit in mm HIGH SPEED SW ITCHING APPLICATIONS. • Low Forward Voltage • Fast Reverse Recovery Time • Sm all Total Capacitance : C¡T = 1.5pF Typ. • Sm all Package : SC-59 + 0.5 2 . 5 - 0 .3

Contextual Info: TOSHIBA 1SS311 1 SS31 1 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V : trr = 1.5/ j s

Contextual Info: TO SHIBA 1SS344 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. U nit in mm + 0.5 2 . 5 - 0 .3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) •

1SS344

Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5 -0.3 • Low Forward Voltage : Vp 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I q = 0.5A (Max.)

1SS348

Contextual Info: TOSHIBA 1SS348 TOSHIBA DIODE 1 SS348 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59 + 0.25

1SS394

Contextual Info: 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1SS196

Contextual Info: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

1SS348

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT • ■ ■ Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.50V (Typ.) Fast Reverse Recovery Time : trr = 20ns (Typ.)

Contextual Info: 1SS349 TOSHIBA TOSHIBA DIODE i SS349 SILICON EPITAXIAL SCH OTT KY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • +0.5 2 5 -0.3 + 0.25 1.5 - 0-15 Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : I r = 50//A (Max.) Small Package

Contextual Info: 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

Contextual Info: 1SS307 T O SH IB A 1SS307 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm GENERAL PUROPOSE RECTIFIER APPLICATIONS. • • • • Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package + 0 .5 2 .5 - 0 . 3 VF = 1.0V Typ. lR = 0.1nA(Typ.)

Contextual Info: T O SH IB A 1SS348 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS348 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING • • • + 0 .5 2 .5 - 0 .3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package

Contextual Info: 1SS349 TO SHIBA TO SHIBA DIODE 1 SS349 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/j A (Max.) Small Package : SC-59 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

1SS344

Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS394 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS394 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2.5 - 0 . 3 • • h 0.25 1.5 -0 .1 5 Small Package Low Forward Voltage : Vp 2 —0.23V (Typ.) @Ip = 5:mA - e - 2 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA 1SS193 1 S S 1 93 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.9V (Typ.)

1SS193

Contextual Info: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)