1SS294 Search Results

Contextual Info: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

1SS294

Contextual Info: 1SS294 SILICON EPITAXIAL PLANAR TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Unit in mm . Low Forward Voltage V f =0 .54V Typ. . Low Reverse Current lR=5MA(Max.) . Small Package SC-59 +0.5 2.5 -0.3 +0.25 1.5-0.15 1 0.3 - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

Contextual Info: Product specification 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF 3 = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5

Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic

NMR14

Abstract: BLM21PG600SN1 TANTAL 16V Tantal 22uF/16V B3FS-1002 sw dip-4 DPC 31 SW-DIP-4 1SS294 B3F-1002
Contextual Info: 5 4 3 2 1 D D SCL 3.3V 3.3V 3 2 1 JP1 XJ8C-0311 DPC R1 GPIO7 SW5 R2 10k R3 10k U2 10k B3FS-1002 8 7 6 5 GPIO6 SW4 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 3.3V M24C32-WBN6 B3FS-1002 CP1 3.3V 3.3V D1 1SS294 0.1uF R4 1.5k RESET GPIO5 SW1 B3FS-1002 R8 R6 R7 1K R9

1SS294

Contextual Info: 1SS294 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS294 ○ 低電圧高速スイッチング用 単位: mm : SC-59 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順電圧が小さい。 z 逆電流が小さい。

1SS294

Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic

1SS294

Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)

1SS294

Contextual Info: TOSHIBA 1SS294 TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59

TOSHIBA DIODE

Abstract: 1SS294
Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic

Contextual Info: 1SS294 TOSHIBA TOSHIBA DIODE 1SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. + 0.5 2 . 5 - 0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package : SC-5Ô + 0.25 1. 5 - 0.15

transistor XM

Abstract: marking 724 diode diode marking code xm sot-23 marking code 1SS294 Semtech
Contextual Info: 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low reverse current • Low forward voltage 3 1 Absolute Maximum Ratings Ta = 25 OC Parameter Marking Code: "XM" SOT-23 Plastic Package 2 Symbol Value Unit

XJ8C-0311

Abstract: R3012 R2533 XG8W-0231 NEC TANTAL NMR14 TANTAL R 1SS294 B3F-1002 DPC 31
Contextual Info: 5 4 3 SCL 3.3V 3.3V DPC R2 10k R1 10k 10k DPC U2 8 7 6 5 JP5 D JP1 XG8W-0231 2 R3 + + R6 1K 1 1 JP2 XJ8C-0311 3 2 1 3.3V 2 1 2 3 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 D 3.3V M24C32-WBN6 R33 10k XJ8C-0311 CP1 D1 1SS294 0.1uF CMB_STATE R5 1.5k RESET JP4 10k 2

NEC TANTAL

Abstract: Tantal 22uF/16V 10uF/16V tantal CP24 LT1761ES5-3.3 tantal NMR14 1SS294 DD10 DD11
Contextual Info: 5 4 3.3V A0 A1 A2 GND R1 10k 8 7 6 5 VCC WP SCL SDA 2 1 3.3V U2 1 2 3 4 3 3.3V D1 1SS294 R3 ST M24C32 R5 1.5k CP1 10k P 0.1uF 3.3V R4 47 C2 12pF C1 12pF C3 22uF/16V Y1 30MHz R6 D N D 1K DPC 5V 2.5V 3.3V R7 1K R13 4 3 2 1 R10 1.5K 1% R11 39(1%) R12 39(1%)

1SS294

Abstract: SOT23 DIODE marking CODE AV
Contextual Info: Certificate TH97/10561QM 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE SOT-23 PRV : 45 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small surface mounting type Low forward voltage Low reverse current Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10

Contextual Info: 1SS294 TO SHIBA TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.5 2.5-0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 • • •

SMD SOT23 A9

Abstract: diode MARKING A9 transistor marking A9 Diodes smd A9 1ss294 A9 SOT-23 smd diode a9 smd A9 st 2901 marking a9 1SS294
Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF 3 = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1

Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS294 Features • • • • • Halogen free available upon request by adding suffix "-HF" Low Current Leakage.

1SS294

Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.