131 TRANSISTOR Search Results

Contextual Info: BSS 131 Infine on technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type Vbs fc ffDS(on) Package Marking BSS 131 240 V 0.1 A 16Î2 SOT-23 SRs Type BSS 131 BSS 131

Q62702-S565

Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
Contextual Info: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565

16 sot 23

Abstract: BSS 130 marking SRs SOT E6327 Q62702-S565 Q67000-S229 marking BSs K3530
Contextual Info: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565

Siemens SRS 20

Abstract: marking BSs sot23 n1215 marking SRs SOT marking BSs sot23 siemens
Contextual Info: SIEMENS B S S 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 131 Vbs 240 V b 0.1 A Type BSS 131 BSS 131 Ordering Code Q62702-S565 Q67000-S229 flDS(on) 16 Q Pin 3 S Package

AN-131

Abstract: SCR Control
Contextual Info: APPLICATION NOTE AN-131 Handling MOS Devices AN-131-R02 AN-131 Static Discharge CMOS Latchup Metal Oxide Semiconductor MOS devices have gained broad acceptance in telecommunications. This includes use of n-channel (NMOS) transistors, p-channel (PMOS) transistors, or both

"Darlington Transistor"

Abstract: 131 Transistor darlington power transistor 2N6059 CP178
Contextual Info: Central TM PROCESS CP178 Power Transistor Semiconductor Corp. NPN Darlington Transistor PROCESS DETAILS Die Size 131 x 131 MILS Die Thickness 12.5 ±1.0 MILS Emitter Bonding Pad Area 27 x 36 MILS Base Bonding Pad Area 20 x 37 MILS Top Side Metalization Al - 50,000Å

ic iR light control

Contextual Info: RPI-131 External dimensions Unit : mm RPI-131 Photointerrupter, Small type 4.2 Through hole 3.2 4-φ 0.8 Absolute maximum ratings (Ta=25°C) 50 mA VR 5 V Power dissipation PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V

transistor r1009

Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
Contextual Info: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02

Contextual Info: •I iT ! 43D5271 H A R G0S414D R DES IS HAS IRFF130/131/13 2/133 IRFF130R/131 R /132R/133R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2 0 5 A F • 7.0A and 8.0A, 80V - 100V • rDS on = 0.18 fl and 0 .2 5 fi • Single Pulse Avalanche Energy Rated*

TIP130

Abstract: TIP132 TIP131 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP130/131/132 DESCRIPTION •With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP135/136/137 APPLICATIONS ·Designed for general-purpose amplifier

TIP135

Abstract: TIP137 TIP136 tip137 equivalent Darlington 6A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP135/136/137 DESCRIPTION •With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP130/131/132 APPLICATIONS ·Designed for general-purpose amplifier

TRANSISTOR SMD CODE B7

Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
Contextual Info: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.

BUK657-500B

Abstract: T0220AB transistor D 587
Contextual Info: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: Philips Semiconductors ^53*131 0031743 341 • APX PNP 1 GHz video transistors ^ Product specification BFQ255; BFQ255A N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product

Contextual Info: [ t ^^53= 131 DEVELOPMENT DATA Q D lflflh ? This data sheat contains advance Information and specifications are subject to change w ithout notice. _ Q A BUT131 SERIES T - 33-/3 N AUER PHILIPS/DISCRETE 5SE I> SILICON DIFFUSED POWER TRANSISTORS

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 m max (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V)

TIP132

Abstract: TIP130 TIP135 TIP136 TIP137T npn darlington transistor 131 TIP131 TIP137
Contextual Info: TIP130/131/132 TIP135/136/137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in

BUK637-400A

Abstract: BUK637-400B P02S
Contextual Info: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

pir 500b

Contextual Info: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUZ90A

Contextual Info: _!_PowerMQS transistor_ BUZ90A^ N AMER PHILIPS/DISCRETE QbE D • ^53*131 0014556 2 ■ r - 3 9 - i/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Sem iconductors bb53*131 □03212*1 STD • APX Product specification NPN 1 GHz wideband transistor BFW16A N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87 mΩ (max) (@VGS = 2.5V)

Contextual Info: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a