128WORDS Search Results

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

QFN36-P-0606-0

Abstract: TC32306FTG QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz
Contextual Info: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmiting and

324T

Abstract: 2MWx16bit
Contextual Info: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

Contextual Info: . New Data File Number CD54/74HC7030 CD54/74HCT7030 2122 HARRIS SEMICOND SECTOR 27E D E3 4302271 0016145 0 Hi H AS T -lC t-S S -M 5 ooT p u t 64-Word x 9-Bit FIFO Register; 3-State Type Features: -Q 0 DATA-OUT “ READY _ DATA-IN READY 92 C S - 4 2 6 6 0 FUNCTIONAL DIAGRAM

74HC7030

Contextual Info: HARRIS Œ SEMI CON D U CT OR CD54/74HC7030 CD54/74HCT7030 June 1998 64-Word x 9-Bit FIFO Register; 3-State Type Features: - 08 DATA-OUT "R E A D Y _ DATA-IN READY MASTER Re s e t 92 CS- 42 66 0 FUNCTIONAL DIAGRAM • Synchronous or asynchronous operation ■ 3-state outputs standard

BA RV

Abstract: code lock circuit A1D14 RV80
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns

Contextual Info: New Data File N um ber 2122 CD54/74HC7030 CD54/74HCT7030 64-Word x 9-Bit FIFO Register; 3-State Type Features: 92CS-42860 FUNCTIONAL DIAGRAM • S ynchronou s o r asynchronous o peration ■ 3-state ou tputs standard ■ M a ster-reset in p u ts to clear data

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

Contextual Info: MCM28F256ACH MCM28F256ACH 256-Mbit 32-Mbit x 8, 16-Mbit x 16 Flash Memory Module with Internal Decoding and Boundary Scan I/O Buffers Literature Number: SNOS764A July 1995 MCM28F256ACH 256-Mbit (32-Mbit x 8 16-Mbit x 16) Flash Memory Module with Internal Decoding and Boundary Scan I O Buffers

RTS5158

Abstract: northbridge G41 se u10i layout GM965 28K1 IC NS0013 sla5t bga676 rtl8010 C1087
Contextual Info: A B C D E X'TAL 14.318MHz Merom Processor System Power Rail Management Dual-Core CLOCK GEN ICS9LPR358AGLFT uFCPGA 478 2 3,4 FSB (667/800 MHz) FSB 4 GM965/PM965 ATI M74M USB 1 LVDS ＊V ＊VS HIGH HIGH ON ON ON ON S3 (Suspend to RAM) LOW HIGH HIGH HIGH ON

BR9020RFV-W

Abstract: D14D BR9020 BR9020F BR9020FV-W BR9020-W tcs m1
Contextual Info: 128 x 16 bit Electrically Erasable Programmable Rom B R 9 0 2 0 / F / 'F V / R F V / 'R F V M - W The BR9020-W series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is perfomed in word units, using four types of operation commands. Communication

Contextual Info: MBM29LV652UE90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: MT90502 Multi-Channel AAL2 SAR Preliminary Datasheet Features • • • • • • • • • • DS5420 AAL2 Segmentation Reassembly device capable of simultaneously processing up to 1023 active CIDs AAL2 Channel Identifier and 1023 active VCs (Virtual Circuits).

Contextual Info: MITSUBISHI LSIs M5M29KBT800AVP P U E U M W A R Y 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT _ CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY Noti S o rn B T ’ DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29KB/T800AVP is 5.0V-only high speed 8,388,608-bit CM OS boot block Flash Mem ories with

EN29LV160CT

Abstract: EN29LV160CB en29lv160c
Contextual Info: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns

k 1358

Abstract: 56FBGA
Contextual Info: 32 Mbit Burst Mode Concurrent SuperFlash ComboMemory SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284 Advance Information FEATURES: • Flash Organization: – 2M x 16 • PSRAM Organization: – 8 Mbit: 512k X 16 – 16 Mbit: 1M x 16 • Single Voltage Read and Write Operations

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20886-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV652UE -90/12 • GENERAL DESCRIPTION The MBM29LV652UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to MBM29LV652UEbe programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP

Multi Chip Memory

Contextual Info: ADVANCED INFORMATION MX69LW3221/3241T/B 32M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers