128MX Search Results

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

b1a12

Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
Contextual Info: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit

DDR200

Abstract: DDR266A DDR266B M312L2923MT0
Contextual Info: M312L2923MT0 184pin 1U Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72(64Mx72*2 bank based on 64Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 M312L2923MT0 184pin 1U Registered DDR SDRAM MODULE

NT1GC72B89A0NF

Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Contextual Info: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency

NT1GT64U8HA0BN

Abstract: NT1GT64U8HA0BN-3C DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 SSTL-18 NT1GT64U8HA0BN-37B
Contextual Info: NT1GT64U8HA0BN Green 1GB : 128M x 64 PC2-3200 / PC2-4200 / PC2-5300 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on 64Mx8 DDR2 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • 128Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx8 DDR2

M390S2858DTU

Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
Contextual Info: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked

M377S2953MT3

Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
Contextual Info: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit

DDR200

Abstract: DDR266A DDR266B
Contextual Info: M381L2923MTL 184pin Unbuffered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72(64Mx72*2 bank based on 64Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.3 May. 2002 Rev. 0.3 May. 2002 M381L2923MTL 184pin Unbuffered DDR SDRAM MODULE Revision History

KMM377S2857AT2-GH

Abstract: KMM377S2857AT2-GL
Contextual Info: Preliminary KMM377S2857AT2 SDRAM MODULE K M M 377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128M x72 SDR AM DIMM w ith PLL & R egister based on Stacked 128Mx4, 4B anks 8K Ref., 3.3V S D R A M s w ith SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 377S2857AT2 is a 128M bit x 72 S yn ­

Contextual Info: TS256MFB72V6U-T 240PIN DDR2 667 Fully Buffered DIMM 2GB With 128Mx8 CL5 Description calibration The TS256MFB72V6U-T is a 256M x 72bits DDR2-667 MBIST and IBIST Test functions Fully Buffered DIMM. The TS256MFB72V6U-T consists of Hot add-on and Hot Remove Capability

Contextual Info: 240PIN DDR2 667 ECC Unbuffered DIMM 2GB With 128Mx8 CL5 TS256MLQ72V6U Description Placement The TS256MLQ72V6U is a 256M x 72bits DDR2-667 Unbuffered DIMM. The TS256MLQ72V6U consists of 18 pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit

Contextual Info: 240PIN DDR3 1066 ECC UDIMM 1024MB With 128Mx8 CL7 TS128MLK72V1U Description Placement The TS128MLK72V1U is a 128M x 72bits DDR3-1066 ECC Unbuffered-DIMM. The TS128MLK72V1U consists of 9pcs 128Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 184Pin DDR400 Registered DIMM 2GB with 128Mx4 CL3 TS256MDR72V4S Description Placement The TS256MDR72V4S is a 256M x 72bits Double Data Rate SDRAM high-density for DDR400. The TS256MDR72V4S consists of 36pcs CMOS 128Mx4 bits Double Data Rate SDRAMs in 60 ball FBGA packages,

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 2GB With 128Mx8 CL5 JM667QLU-2G • Description Placement The JM667QLU-2G is a 256M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLU-2G consists of 16pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

Contextual Info: IBM13M13734BCA 128M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM -75A : R eg: : DIMM CAS Latency : f CK ; Clock Frequency ; Clock Cycle IW : | Clock Access Tim e j Units ;

Contextual Info: =• = IBM13M13734BCA Preliminary 128M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM -75A . | Reg- | DIMM CAS Latency

Contextual Info: IBM13M13734BCA 128M x 72 2-B an k R eg istered /B u ffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM • Performance: i -260 CL=2 ! -360 CL=3 I -360 CL=2 ji Units: :. :.:. :.:.

k3661

Abstract: DDR200 DDR266A DDR266B HYMD212G726K4-H HYMD212G726K4-K HYMD212G726K4-L
Contextual Info: HYMD212G726K4-K/H/L 128Mx72 Registered DDR SDRAM DIMM PRELIMINARY DESCRIPTION Hynix HYMD212G726K4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 128Mx72 high-speed memory arrays. HynixHYMD212G726K4-K/H/L series

M312L2920MT0

Contextual Info: M312L2920MT0 184pin 1U Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 based on 128Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 Rev. 0.0 Oct. 2001 M312L2920MT0 184pin 1U Registered DDR SDRAM MODULE Revision History

M312L5628MT0

Abstract: DDR266A
Contextual Info: M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE 2GB DDR SDRAM MODULE 256Mx72 (128Mx72 *2)based on 128Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 - -1 - Rev. 0.0 Oct. 2001 M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE

PC2-5300

Abstract: SSTL-18 NT2GT72U4NA2BV
Contextual Info: NT512T72U89A0BV / NT1GT72U4PA0BV / NT2GT72U4NA2BV 512MB: 64M x 72 / 1GB: 128M X 72 / 2GB: 256M X 72 Registered DDR2 SDRAM DIMM 240pin Registered DDR2 SDRAM MODULE Based on 64Mx8 & 128Mx4 DDR2 SDRAM Die A Features • 64Mx72 Registered DDR2 DIMM based on 64Mx8 DDR2

64A0TESEM8G17TWN

Abstract: PC-100
Contextual Info: 128M x 64 Bit PC-100 SDRAM DIMM PC-100 SYNCHRONOUS DRAM DIMM 64A0TESEM8G17TWN 168 Pin 128Mx64 SDRAM DIMM Formerly 64A0TESEM8G17T Unbuffered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 128Mx64 bit, 17 chip, 168 Pin DIMM module consisting of (16) 16Mx8x4 (TSOP)

2808 eeprom

Contextual Info: 128M x 72 Bit SDRAM DIMM PC100/133 SYNCHRONOUS DRAM DIMM 72A0TsSEM8G19TWN 168 Pin 128Mx72 SDRAM DIMM Unbuffered, 8k Refresh, 3.3V with SPD General Description Pin Assignment The Module is a 128Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 16Mx8x4 (TSOP)