128KX48 Search Results

Contextual Info: WS128K48V-XG4WX 128Kx48 3.3V SRAM MODULE ADVANCED* FEATURES • 2V Data Retention Devices Available Low Power Version ■ Access Times 15, 17, 20, 25ns ■ Packaging ■ TTL Compatible Inputs and Outputs • 116 Lead, 40.0mm Hermetic CQFP (Package 504) ■ Weight

WS128K48-XG4WX

Contextual Info: WS128K48-XG4WX 128Kx48 SRAM MODULE ADVANCED* FEATURES • 2V Data Retention Devices Available Low Power Version ■ Access Times 17, 20, 25, 35ns ■ Packaging: • 116 Lead, 40.0mm Hermetic CQFP (Package 504) ■ TTL Compatible Inputs and Outputs ■ Weight

Contextual Info: ca WHITE ^MICROELECTRONICS 128Kx48 SRAM MODULE WS128K48-XG4WX ADVANCED* FEATURES • 2V Data Retention Devices Available Low Power Version • 116 Lead, 40.0mm Hermetic CQFP (Package 504) ■ TTL Compatible Inputs and Outputs ■ Commercial, Industrial and Military Temperature Ranges

Contextual Info: a WHITE /M IC R O E L E C T R O N IC S 128Kx48 3.3V SRAM MODULE W S128K48V-XG4W X ADVANCED* FEATURES • A c c e s s Tim es 1 5 , 1 7 , 2 0 , 25 n s ■ Pa ckaging 2 V Data Retention D e vice s A vailab le ■ TTL C om patible Inputs and Outputs Low Pow er Version

Contextual Info: M/HITE /MICROELECTRONICS 128Kx48 3.3V SRAM MODULE WS128K48V-XG4WX ADVANCED* FEATURES • 2V Data R etention D evices A v a ila b le ■ A c c e s s T im e s 15, 17, 20, 25ns Lo w Pow er V ersion ■ Packaging ■ T T L Com patible Inputs and Outputs • 116 Lead, 40.0m m H erm etic CQFP (Packag e 504)

Contextual Info: M/HITE / M I C R O E L E C T R O N I C S m 128Kx48 SRAM MODULE WS128K48-XG4WX A D V A N C ED * FEATURES • 2V D ata R etention D evices A va ila b le • 116 Lead, 40.0m m H erm etic CQFP Package 504 ■ TTL C om p atible Inputs and O utputs ■ C om m ercial, In d u s tria l and M ilita ry Tem pe ratu re Ranges

Contextual Info: a WHITE /MICROELECTRONICS 128Kx48 3.3V SRAM MODULE W S128K48V-XG4WX ADVANCED* FEATURES • 2V Data Retention D evices A v a ila b le ■ A c c e s s T im e s 1 5 ,1 7 , 20, 25ns Lo w P ow er V ersion ■ Packaging ■ T T L Com patible Inputs and Outputs

Contextual Info: VZÀ WHITE M I C R O E L E C T R O N I C S 128Kx48 3.3V SRAM MODULE W S128K48V-XG4W X ADVANCED* FEATURES • ■ A c c e s s Tim es 1 5 ,1 7 , 20, 2 5 n s ■ 2V D ata Retention D e vice s A va ilab le Low Po w e r Version Pa ckaging • 116 Lead, 40.0m m Herm etic CQFP (Package 504)

EDI8L24129V

Contextual Info: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution

Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

Contextual Info: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129\taBC is a 3.3V, three megabit SRAM 128Kx24 bit CMOS Static Random Access Memory Array constructed with three 128Kx8 die mounted on a multi­

Contextual Info: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

Contextual Info: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access

256kx32

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
Contextual Info: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: White Electronic Designs EDI8L32128V 128KX32 CMOS HIGH SPEED STATIC RAM FEATURES 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

DSP5630x

Abstract: p 602 EDI8L24129V
Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

Contextual Info: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V

MO-47AE

Abstract: DSP96002 EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C 512Kx48
Contextual Info: EDI8L32256C 256Kx32 SRAM Module 256Kx32, 5V Static Ram Features 256Kx32 bit CMOS Static DSP Memory Solution • Texas Instruments TMS320C3x, TMS320C4x • Analog SHARCTM DSP • Motorola DSP96002 Random Access Memory Array • Fast Access Times: 15, 17, 20 and 25ns

Contextual Info: EDI8L32128V White Electronic Designs T NO FEATURES 128KX32 CMOS HIGH SPEED STATIC RAM 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: ^EDI EDI8L32128V ELECTRONIC DESIGNS. INC I 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM IFeatures The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access

Contextual Info: ^EDI EDI8L32256C 256KX32 SRAM Module ELECTRONIC DESIGNS, INC 256Kx32,5V Static Ram ¡Features The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. 256Kx32 bit CMOS Static The device is available with access times of 15,17, 20and 25ns, allowing the creation of a no wait state DSP memory

EDI8L32128V

Abstract: EDI8L32512V MO-47AE TMS320LC31
Contextual Info: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to