125TI Search Results

Contextual Info: TOSHIBA TOSLINK TOTX1120 Unit mm Fiber Optic Transmitting Module for 12.3 ST Connector with 62.5/125tim Silica Fiber •H.29 8.2 CO pupf Features • Data rate: up to 155Mb/s (NRZ code) • Transmission distance: up to 2000m (using TORX1120) (Point to point transmission)

76L05

Contextual Info: KA7 6L05Z ELECTRONICS Industrial 3-TERM INAL LOW DROPOUT VOLTAGE REGULATOR KA76L05 is an adjustable 3-terminal low dropout voltage regulator designed to need very low quiescent current. internally, implemented circuits include 60V load dump protection, - 50V reverse transient short circuit and thermal over load protection.

AMN3011

Abstract: MN3204 MN3012 190-STAGE
Contextual Info: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS I V I v / « J 1C, LSI E le c t r ic a l Type M a x im u m rF u n c t*i o n No. (T a = 2 5 °C ) S ym bol Ite m Vte= - 1 8 ~ + 0 . 3 V V o= —1 8 -+ 0 .3 V Topr=-20~+70t: Tstg=—55— h l2 5 t; BBD fo r S ig n a l

Contextual Info: M 5 M 4 V 4 8 J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 $ , - 8 S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM — DESCRIPTION This is a family of 524288-word by 8 bit dynamic RAMs, fabri:eted with the high performance CMOS process, and is

2147D

Contextual Info: CY2147 CYPRESS SEMICONDUCTOR 4096 x 1 Static R/W RAM F eatures F unctional D escription • A u to m a tic po w er-d o w n w h en d e s e ­ le c te d The1 C Y 2 147 is a h ig h -p e rfo rm a n c e C M O S s ia lic R A M o rg a n iz e d as 4096 b y 1 bit. E asy

hy51v16404ct

Contextual Info: -H Y U W P H I * HY51 V17404C,HY51V16404C 4Ux4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind o f page mode which is useful for the read operation. The circuit and process

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

TIC COL 02

Contextual Info: M T 4 C 1670/1 L 6 4 K X 16 D R A M I ^ K Z R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard xl6 pinouts, tim ing, functions and packages • High-performance, C M O S silicon-gate process

Contextual Info: S P E C I F I C A T I O N T E N T A T DEVICE NAME : TYPE NAME : IVE P o w e r M O S F E T 2 5 K 2 7 5 7 - 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fiiii Ffcrtrir DRAWN . CHECKED

Contextual Info: 'HYUNDAI HYM5V64214A Z-Series SO DIMM 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V17804B in 28/28 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit board. 0.22|iF

Contextual Info: C "HYUNDAI • HY51V17404B.HY51 V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: Preliminary KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L Fast Page Mode 1Mx32 DRAM DIMM, Low Power, 4K & 1K Refresh, 3.3V G ENER AL FEATURES D ESCRIPTIO N The Samsung KMM332V10 2 4BT is a 1M bit x 32 D ynam ic RAM high density m em ory module. The

Contextual Info: TANTALUM ELECTROLYTIC CAPACITORS @3 Resin-molded Chip, Compact Series Fqt SMD xiic h ico n Type num bering system Exam ple: 20V 0.47pF Smaller F 9 2 1 D 4 7 4 M A — i— Series Capacitance Rated voltage I Case code Taping code (Refer to page 198 tor details)

Contextual Info: TTM8000 Time Tagging Module with 8-Channels Release 4.4.2 – April 16th, 2015 1/60 TTM8000 Table of Contents Introduction:. 3

ISTS80

Contextual Info: I50C0M COMPOMENTS DUAL CHANNEL SLOTTED INTERRUPTER SWITCH TRANSISTOR SENSOR HÄ BVEro Min V b v eco Min V 1CEO Max nA ISTS822SD Max ISTS822S •f ISTS832SD vF ISTS832S Max 1.6 1.7 1.7 1.6 1.7 1.7 100 100 100 100 100 100 30 30 30 30 30 30 5.0 5.0 5.0 5.0

Contextual Info: < < 3 < 3 Y IIIID A I - ^ • HYM564214A H-Series 4Mx64-blt CMOS ORAM MODULE with EXTENDED DATA OUT J GENERAL DESCRIPTION The HYM 564214A H-Series is a 2M x64-bit Extended Data O ut mode CM OS DRAM m odule consisting of eight HY5117804B in 28 pin SOJ or TSOPII and tw o 16-bit BiCMOS line driver in TSSO P on a 168 pin

Contextual Info: SSE D MI CR ON T E C H N O L O G Y INC M IC R O N • b l l l S H T 0 0 D 4 71 7 TTT 1 MEG DRAM MODULE X iu r n MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line

2AN6551

Contextual Info: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS 1C, LSI E le c tr ic a l C h a r a c te r is t ic s T y p e No. F u n c tio n (T a = 2 5 °C ) VTE= —18— h0.3V Ite m Sym bol Signal Delay Time Vo= —18 — 1-0.3V Input Signal 1’requencv T opr=-20~+60t

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^1,4142 DDlS57b 114 I KM41C4000BL SMGK CMOS DRAM 4M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Perform ance range: I rac *CAC <RC KM41C4000BL-6 60ns 15ns 110ns KM41C4000BL-7 70ns 20ns 130ns

T16D

Abstract: MT30A
Contextual Info: PRELIMINARY |V |IC Z F O N MT8D88C1 32VH/432VH S , M T16D 88C 232V H /832V H (S) 4MB. 8MB. 16MB, 32M B DRAM CA RD S DRAM MINICARD 4,8,16*, 32* megabytes 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • •