HY51V17804B Search Results

Contextual Info: •H Y U N D A I HYM5V72A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY51V17804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 h F and 0.01 nF

Contextual Info: • H Y UN D A I HYM5V72A414A F-Series Unbuffered 4M x 72-bit CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting o f eighteen HY51V17804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPFtOM on a 168 pin glass-epoxy printed circuit b o a rd . 0.1 ^F and 0.01 nF

HY5117804

Contextual Info: •HYUNDAI HYM5V64414A F-Series 4M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HVM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51V17804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .luF and 0.01 mF

Contextual Info: •HYUNDAI HYM5V64214A F-Series 2M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V64214A is a 2M x 64-bit EDO m ode CMOS DRAM m odule consisting of eight HY51V17804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .I^F and 0.01 nF

s18r

Abstract: HY51V17804B
Contextual Info: “HYUNDAI HY51V17804B, HY51V16804B 2M x 8-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells

Contextual Info: 'HYUNDAI HYM5V64214A Z-Series SO DIMM 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V17804B in 28/28 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit board. 0.22|iF

Contextual Info: - H Y U H D f t l * HY51V17804B.HY51V16804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

HY51V17804B

Contextual Info: •HYUNDAI HY51V17804B.HY51 V16804B 2M x8, E xten ded Data O ut m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith E x te n d e d D a ta O u t m od e C M O S D R A M s. E xte n d e d d a ta o u t m od e is a kind o f pa ge m ode w h ich is u se fu l fo r th e read o p e ra tio n . T h e c irc u it and p ro c e s s

Contextual Info: HYM5V64214A Z-Series SO DIMM 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM5V64214A Z-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY51V17804B in 28 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 144 pin Zig Zag pin glassepoxy printed circuit board. 0.01µF and 0.1µF decoupling capacitors are mounted for each DRAM.

Contextual Info: • H Y U N D A I _ H Y M 5 V 7 2 A 2 1 4 A F - S e r i e s Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A214A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of nine HY51V17804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 pF and O.OinF

Contextual Info: • H Y U N D A I HYM5V64214A F-Series 2M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V64214A is a 2M x 64-bit ED O mode C M O S DRAM module consisting of eight HY51V17804B in 28/28 SO J or TSOP-II and one 2048 bit EEPR O M on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF

Contextual Info: HY51V17804B,HY51V16804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

1MX16BIT

Abstract: 16MX1
Contextual Info: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE

Contextual Info: HYUNDAI HYM5V72A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 5V 72A 214A is a 2M x 72-bit EDO m ode C M O S DRAM module consisting of nine H Y51V 17804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pm glass-epoxy printed circuit board. 0 ln F and 0.01 uF

HY51V17804C

Contextual Info: HY51V17804C,HY51V16804C 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 8 0 4 B ,H Y 5 1 V 1 6 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: • H Y U N D A I H Y M 5V 64214A Z -S e r ie s SO DIMM 2M X 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION Ttie HYM5V64214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V178046 in 28/28 pin SOJ or TSOR-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit board. 0.22pF

HY51V17804C

Abstract: hy51v17804cj
Contextual Info: HY51V17804C,HY51V16804C 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC

HY514260

Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .

Contextual Info: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16

HY5118164BJC

Abstract: HYM5V72A404 HY514404BJ HY5117404A
Contextual Info: QUICK REFERENCE DIMM MODULE 5V Unbuffered DIMM TYPE SIZE 168 Pin 8MB Unbuffered DIMM 16MB 32MB DESCRIPTION 1M X 64 EDO, SL PART NO. HYM564124AR/ATR SPEED REF. 60/70/80 DEVICE USED HEIGHT 1K HY5118164BJC/BTC x 4 S, 1" D, 1" S, 1" IM X 72 EDO, SL HYM572A124AR/ATR