1200-1300 MHZ RF POWER Search Results

KC2-19

Contextual Info: Frequency Multiplier Doubler KC2-19+ Typical Performance Data RF IN=+5dBm FREQUENCY X 1 OUTPUT 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 (MHz) X 2 OUTPUT X 3 OUTPUT 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100

42756 regulator

Abstract: 42756 C207 capacitor j146 1300 transistor
Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced

42756 regulator

Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power ampliier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced

Contextual Info: Preliminary PTVA127002EV Thermally-Enhanced High Power RF LDMOS FETs 700 W, 50 V, 1200 – 1400 MHz Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced

PTVA120251

Abstract: rfpower fet
Contextual Info: Preliminary PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 1200 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

PTVA123501EC

Abstract: rfpower fet
Contextual Info: Preliminary PTVA123501EC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.

PTVA120251EA

Contextual Info: Preliminary PTVA120251EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 1200 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.

Contextual Info: Preliminary PTVA120251EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 1200 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power ampliier applications in the 1200 MHz to 1400 MHz frequency band.

Contextual Info: PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down

power tr unit j122 5 pin

Abstract: power tr unit j122 PTVA120251EA lm7805 3A A 4562 L 4440 J233 AG J56-1
Contextual Info: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 2 WAY-90° MIniature Ceramic 425 MHz to 2700 MHz NEW! QCN MODEL NO. * QCN-7 * QCN-12 * QCN-19 * QCN-25 * QCN-27 FREQ. RANGE MHz INSERTION LOSS (dB) Above 3dB ISOLATION (dB) PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB)

Contextual Info: Dual 900MHz Balanced Mixer with High Side LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 700MHz to 1000MHz IF Frequency 50MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB

40MHZ

Abstract: ADL5358XCPZ-R7 ADL5358XCPZ-WP ADL5365 ADL5358 TC4 pre amp
Contextual Info: Dual 500-1700MHz Balanced Mixer with LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 500MHz to 1700MHz IF Frequency 40MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB

FV1206-1

Abstract: FV-1206-1
Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 2 WAY-90° MIniature Ceramic 330 MHz to 3400 MHz NEW! QCN MODEL NO. * QCN-5 * QCN-7 * QCN-12 * QCN-12A * QCN-19 * QCN-25 * QCN-27 QCN-34 FREQ. RANGE MHz INSERTION LOSS (dB) Above 3dB ISOLATION (dB) PHASE UNBALANCE (Degrees)

FV1206

Abstract: FV-1206-1
Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 2 WAY-90° MIniature Ceramic 330 MHz to 3400 MHz NEW! QCN MODEL NO. * QCN-5 * QCN-7 * QCN-12 * QCN-12A * QCN-19 * QCN-25 * QCN-27 QCN-34 PCB Note B C O N N E C T I O N FREQ. RANGE MHz INSERTION LOSS (dB) Above 3dB ISOLATION

FV-1206-1

Abstract: FV1206-1
Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 2 WAY-90° MIniature Ceramic 330 MHz to 3400 MHz NEW! QCN MODEL NO. * QCN-5 * QCN-7 * QCN-12 * QCN-12A * QCN-19 * QCN-25 * QCN-27 QCN-34 FREQ. RANGE MHz INSERTION LOSS (dB) Above 3dB ISOLATION (dB) PHASE UNBALANCE (Degrees)

Zener C215

Contextual Info: ASX520 250 ~ 3000 MHz MMIC Amplifier Description Features  31 dB Gain at 900 MHz  33 dBm P1dB at 900 MHz  48 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Two Power Supplies The ASX520, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

Contextual Info: X3 Frequency Multiplier 50Ω ZX90-3-452+ Output 3000 to 4500 MHz Maximum Ratings Operating Temperature Features -45°C to 85°C Storage Temperature -55°C to 100°C RF Input Power 20 dBm • • • • broadband low conversion loss, 14.7 dB typ. high rejection F2, and F4, 55 dBc typ.

rf16

Contextual Info: X3 Frequency Multiplier 50Ω ZX90-3-452+ Output 3000 to 4500 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 100°C RF Input Power 20 dBm Coaxial Connections • • • • • broadband low conversion loss, 14.7 dB typ.

zx90-2-19

Contextual Info: X2 Frequency Multiplier 50Ω ZX90-2-19+ Output 2200 to 3800 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power, 25°C 20 dBm • broadband • low conversion loss, 10.5 dB typ. • rugged construction

Contextual Info: X2 Frequency Multiplier 50Ω ZX90-2-19+ Output 2200 to 3800 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power, 25°C 23 dBm • • • • broadband low conversion loss, 10.5 dB typ. rugged construction