PTVA127002EV Search Results
PTVA127002EV Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PTVA127002EV-V1-R0 | Cree/Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-4 | Original | 533.87KB | |||
| PTVA127002EV-V1-R250 | Wolfspeed | RF MOSFET TRANSISTORS | Original | 825.82KB | 10 | ||
| PTVA127002EVV1R250XTMA1 | Infineon Technologies | Uncategorized - Miscellaneous - RF MOSFET TRANSISTORS | Original | 551.97KB | |||
| PTVA127002EVV1XWSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 551.97KB |
PTVA127002EV Price and Stock
Infineon Technologies AG PTVA127002EVV1R0XTMA1Trans RF MOSFET N-CH 105V 5-Pin Case 36275 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PTVA127002EVV1R0XTMA1 | 14 | 1 |
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PTVA127002EV Datasheets Context Search
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Contextual Info: Preliminary PTVA127002EV Thermally-Enhanced High Power RF LDMOS FETs 700 W, 50 V, 1200 – 1400 MHz Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with |
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ptva127002evh-36275-4a127002ev | |
PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
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ptva093002tc960mhz758mhzpxac201602fc+6 | |
BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
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bgu7073bgu7072infineon power management selection guide 2011toshiba car audio catalog 2015+6 |