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    A127002EV Search Results

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    Rochester Electronics LLC PTVA127002EVV1R0XTMA1

    RF MOSFET LDMOS 50V H-36275-4
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    DigiKey PTVA127002EVV1R0XTMA1 Bulk 20 1
    • 1 $735.30
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    MACOM PTVA127002EV-V1-R0

    RF MOSFET LDMOS 50V H-36275-4
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    DigiKey () PTVA127002EV-V1-R0 Cut Tape 4 1
    • 1 $531.79
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    Mouser Electronics () PTVA127002EV-V1-R0
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    Richardson RFPD PTVA127002EV-V1-R0 50
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    MACOM PTVA127002EV-V1-R250

    RF MOSFET
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    Mouser Electronics () PTVA127002EV-V1-R250
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    Richardson RFPD PTVA127002EV-V1-R250 250
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    Infineon Technologies AG PTVA127002EVV1R0XTMA1

    RF Power Field-Effect Transistor
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    Rochester Electronics PTVA127002EVV1R0XTMA1 20 1
    • 1 $588.24
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    • 100 $552.95
    • 1000 $517.65
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    Infineon Technologies AG PTVA127002EV

    RF POWER TRANSISTOR
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    Richardson RFPD PTVA127002EV 30
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    A127002EV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary A127002EV Thermally-Enhanced High Power RF LDMOS FETs 700 W, 50 V, 1200 – 1400 MHz Description The A127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


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    PTVA127002EV PTVA127002EV H-36275-4 a127002ev PDF