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    PTVA123501FC Search Results

    PTVA123501FC Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTVA123501FC-V1-R0
    Wolfspeed IC AMP RF LDMOS H-37248-2 Original PDF 692.86KB
    PTVA123501FC-V1-R250
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 672.32KB
    PTVA123501FCV1R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 673.62KB
    PTVA123501FCV1XWSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 673.62KB
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    PTVA123501FC Price and Stock

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    MACOM PTVA123501FC-V1-R0

    Trans RF MOSFET N-CH 105V 3-Pin Case H-37248-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD PTVA123501FC-V1-R0 50
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    MACOM PTVA123501FC-V1-R250

    Trans RF MOSFET N-CH 105V 3-Pin Case H-37248-2 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD PTVA123501FC-V1-R250 250
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    Infineon Technologies AG PTVA123501FCP2

    RF Components (Alt: SP001109238)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik PTVA123501FCP2 26 Weeks 50
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    Infineon Technologies AG PTVA123501FCV1R0

    RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian PTVA123501FCV1R0 836
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    PTVA123501FC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original
    ptva123501ecptva123501fch-36248-2h-37248-2 PDF

    Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original
    ptva123501ecptva123501fch-36248-2h-37248-2 PDF

    Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original
    ptva123501ecptva123501fch-36248-2h-37248-2 PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original
    ptva093002tc960mhz758mhzpxac201602fc+62025mhzh-49248h-4h-37248-4400mhz2700mhzptfb090901ea PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original
    bgu7073bgu7072infineon power management selection guide 2011toshiba car audio catalog 2015+6bap50-03 spice modelbb 804 varicap diodemosfet toshiba 2015rf manual 19th editionrf manualblf188 PDF