1200 VOLT NPN Search Results

by205

Abstract: by205 diode BY205-400 TRANSISTOR 2n2904 2N2222 2N2904 D44H11 D45H11 TIPL761B TIPL761C
Contextual Info: TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 100 W at 25°C Case Temperature

TIPL760B

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760C by205
Contextual Info: TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1200 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature

TIPL760B

Abstract: by205 by205 diode TIPL760c TRANSISTOR 2n2904 2N2222 2N2904 BY205-400 D44H11 D45H11
Contextual Info: TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1200 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

ZTX653

Contextual Info: NPN SILICON PLANAR M EO IUM POWER TRANSISTORS ISSUE 2 -J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * Ptot=1 W att E E-Line T 092 Compatible ABSOLUTE M A XIM U M RATINGS. PARAMETER SYM BOL

equivalent FZT651

Abstract: FZT651 FZT751 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C 0.5 225 0.3 VCE=2V ABSOLUTE MAXIMUM RATINGS. V 75 0.0001

TIPL780

Abstract: TIPL750 transistor BC 667 T1PL760A TIPL760 TIK760A TIPL760A TIPL760C BC 251 transistor
Contextual Info: 3 b TIPL76Q, TÌPL760A NPN SILICON POWER TRANSISTORS AUGUST Im • REVISEDMAV 1995 Rugged Triplo-Diffused Planar Construction TO-220 PACKAGE TOP VIEW 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at 100“C Hr. • 1000 Volt Blocking Capability

ztx653

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX652 ZTX653 UNIT

b200k

Abstract: mg20Q6EK MG20Q6EK1
Contextual Info: MG20Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain

100-C

Abstract: BY205-400 TIPL760 TIPL760A TIPL760B TIPL760C
Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS _ A U G U S T 1978 • R E V IS E D M A Y 1995 • Rugged Triple-Diffused Planar Construction • 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at 100°C

ztx653

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 - JULY 94_ FEATURES 100 Volt vCE0 * * * 2 Amp continuous current Low saturation voltage * P,ot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage ZTX653 UNIT

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

2SC3140

Abstract: L0801
Contextual Info: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis­ tors is designed fo r linear operation in the 500 to 1000 MHz

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage 0.6 C 0.5 225 0.4 E COMPLEMENTARY TYPE – FZT751 IC/IB=10 C 175 0.3 VCE=2V 0.2 0.1 ABSOLUTE MAXIMUM RATINGS.

TIPL760c

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760B
Contextual Info: TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed

TIPL760B

Contextual Info: TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 • Rugged Triple-Diffused Planar Construction • 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed

Contextual Info: 813 469 3 SE MICOA MO DE J 0 1 3 4 ^ 3 □□ □D1 3D S |~ T-2*?-O \ LOW LEVEL AMPLIFIERS C o n t’d Maximum Ratings Type NPN PNP 2N260JL 2N2521 2N2602 ' 2N2522 2N2603 2N2459 2N2590 2N2460 2N2591 2N2461 2N2592 2N2462 2N2593 2N2515 2N2595 • 2N2596 2N2516

2N2222

Abstract: 2N2904 BY205-400 D44H11 D45H11 TIPL761B TIPL761C
Contextual Info: TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed

Contextual Info: TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 • Rugged Triple-Diffused Planar Construction • 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed

TV flyback transformer pinout

Abstract: MMB2222A TL431A transistor circuit ncp*1337 TRANSISTOR SMD C22B SMD ZENER DIODE 26b xbox schematic diagram mmb2222 xbox power supply schematic diagram ncp1207 smd
Contextual Info: TND334/D Rev. 3, JUN - 2010 50 W Four-Output Internal Power Supply for Set Top Box Reference Design Documentation Package Semiconductor Components Industries, LLC, 2010 June, 2010 - Rev. 3 1 Publication Order Number: TND334/D Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes

T092

Abstract: ZTXI053A
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR I ZTXI053A ISSUE 2- JANUARY I Full characterised 1995 P data now available Ca E E-Line T092 Cnmnetible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter I ZTX1 053A I IvcBo I 150

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 979 378-2022 (212)227FAX: (879) 3784880 2N 6083 NPN SILICON RF POWER TRANSISTORS •MAXIMUM RATINGS . . . designed (or 12.5 Voll VHP large-signal power amplifier applications required in military and industrial equipment operating to

transistor c 6073

Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
Contextual Info: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005

J297

Abstract: balun 300 75 ohm transistor bd136 150 watts power amplifier layout
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating in the range 800 – 960 MHz.