11E1 Search Results

11E6

Abstract: 11E1 11E2 11E4
Contextual Info: 11E1 - 11E6 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: ÎÏÀ PER I COM PI74FCT163240 I I [ t I 11 I I M 11 I I 11 11 111 M I 111 111 II I I I II I 11 I 11 II 1111 11 ! 11E111 I 11 II 11 111 11 111 i 111 111111 i 1111 111 1111 U 1111 t M 111III M Fast CMOS 3.3V 16-Bit Octal Buffer/Line Driver Product Features:

Contextual Info: ia / ioo ~ SILICON RECTIFIER DIODE 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size vt £_ ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7 .027 0.5(.020) ° High Surge Capability DIA 2 .7(.106) d i a MAX U1A 27 (1 .06 ) MIN » 26mm and 52mm Inside Tape Spacing

11E1

Abstract: 11E2 11E4
Contextual Info: SILICON RECTIFIER DIODE 11E1 11E2 11E4 ia / 1 0 0 ~ 4 0 0 v FEATURES Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability o 26mm and 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS \ type Voltage Rating

Contextual Info: 11E1 - 11E2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

AV RF modulator

Abstract: Scans-0017259
Contextual Info: EDISWAN 11E16 H.F. DOUBLE TETRODE Indirectly heated TENTATIVE G EN ERA L The 11E16 is an internally neutralised h.f. double tetro d e. It has a centre tapped heater and is intended fo r use as a push-pull am plifier o r frequency treb ler at frequencies up to

Ediswan

Abstract: 11E13 Scans-0017259
Contextual Info: 11E13 EDISWAN IIEI3 H.F. D O U B LE TETRO D E Indirectly heated TENTATIVE G ENERAL The 11E13 is an indirectly heated, miniature based, h.f. double tetrode. It is internally neutralised and is intended for use as a push-pull amplifier at frequencies up to 225 Mc/s.

11E1

Contextual Info: ｓ DIODE 11E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Repetitive Peak Reverse Voltage

Contextual Info: ｓ DIODE 11E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Repetitive Peak Reverse Voltage

11E2

Abstract: 11E4 11E1
Contextual Info: SILICON RECTIFIER DIODE i a / ioo~ 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size v j/— ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7C027 0.5 .020) High Surge Capability ° 26mm and 52mm Inside Tape Spacing Package Available DIA 2.7(.106)d i a

Contextual Info: 11E100-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)1 P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: 11E11 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)110m P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: IBM 11D1475B IBM 11E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • High Performance C M O S process • Single 5V, ± 0.25V Power Supply • Performance: • All inputs & outputs are fully TTL & C M O S

Contextual Info: 11E11-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)110m P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: 11E100 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)1 P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

Contextual Info: TOSHIBA 1SV230 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.

SV277

Contextual Info: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)

42c27

Contextual Info: T E X A S IN S T R -CASIC/MEMORY} 42 Ô 96Ï725 1 I PROGRAMMABLE L0G|C 42C 27235 TEXAS D E § aTt.l7 aS 0 0 S 7 2 3 S I'NSTR <AS I C /MEMORY TYPES SN54PL333, SN54PL335, SN74PL333, SN74PL335 FIELD-PROGRAMMABLE LOGIC SEQUENCERS D2707r DECEMBER 1982 07 J OR N DUAL-IN-LINE PACKAGE

Contextual Info: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)

1SV304

Contextual Info: T O SH IB A 1SV304 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 0 4 VCO FOR VHF BAND RADIO U nit in mm • Sm all Package • High Capacitance Ratio : C i v / C 4 v = 3.0 Typ. • Low Series Resistance : rs = 0 .2 7 0 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV231 TO SHIBA 1 S V2 3 1 TO SHIBA VAR IABLE CAPACITANCE DIODE C ATV TUN IN G . • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C 2 V /C 2 5 V = 15 Typ. Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.

Contextual Info: 1SV229 TO SHIBA 1 SV2 2 9 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE Unit in mm Ultra Low Series Resistance : rs = 0.2fl Typ. Useful for Small Size Set M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1