11E13 Search Results

Ediswan

Abstract: 11E13 Scans-0017259
Contextual Info: 11E13 EDISWAN IIEI3 H.F. D O U B LE TETRO D E Indirectly heated TENTATIVE G ENERAL The 11E13 is an indirectly heated, miniature based, h.f. double tetrode. It is internally neutralised and is intended for use as a push-pull amplifier at frequencies up to 225 Mc/s.

imperial m015

Abstract: BF253
Contextual Info: ANALOG ► DEVICES Dual/Quad Single Supply Operational Amplifier 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / jjls High Gain Bandwidth: 4 MHz Low Input Offset Voltage

Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j

Contextual Info: IB M 1 1 D 1 3 2 0 L IB M 1 1 E 1 3 2 0 L 1M x 32 D R A M M odule Features • • • Low current consum ption • All inputs & outputs a re fully T T L & C M O S com patible • Fast P a g e M o de a c c e ss cycle • Refresh M odes: R A S -O n ly and C B R

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: IBM11D1320BC IBM11D1320BB 11E1320BC 11E1320BB IM x 32 DRAM Module Features All inputs & outputs are fully TTL & CM O S compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column

Contextual Info: IBM11D1360Q 11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address

11a10

Abstract: 11J126 11F-11
Contextual Info: 13402 SOUTH 71 HIGHWAY GRANDVIEW, MO 64030 E-mail: torotel@sound.net 816 761-6314 FAX (816) 763-2278 PART NUMBER ½LI2 ( µJ ) "L" NO DC ( µ H) DCR MAX. (Ω) DCI MAX. (Amps) "L" WITH DCI (µH) TEST LEVEL (VRMS) 5% 10% 20% 30% 40% 50% DCI (Amps) FOR % DECREASE IN "L"

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

11E23

Contextual Info: IBM Table of Contents Alphanumeric Index. 11 General Information. 15

RIR AS3 ON

Contextual Info: IB M 1 1 D 1 3 6 0 L IB M 1 1 E 1 3 6 0 L 1 M x 3 6 D R A M Module Features • Single 5V, ± 0.5V Power Supply • Low current consumption • All inputs & outputs are fully TTL & CMOS compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR

ECC89

Abstract: STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5
Contextual Info: 6 Z a 121200 MOSKVA G 200 ELECTRONQRGTECHNICA 5 2 ELORG MOSKVA 200 0 240-96-07 5 3 411.386 REPLACEMENT GUIDE for USSR and FOREIGN ELECTRONIC TUBES U SSR - M O SC O W Type of U SSR Foreign eq u ivalen ts iA in 1147c 1142111 31422c 5J1038M 5I43C 5I44M K 5I44C

IBM 1M x 4

Abstract: 11D1360BA 11E1360BB
Contextual Info: IBM11D1360BB IBM11D1360BA 11E1360BB 11E1360BA 1M x 36 D R A M M odule Features All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column

IMx36

Abstract: 11D-1320B
Contextual Info: IB M 11D 1360ED IB M 1 1E 1 3 6 0 ED 1M x 36 DRAM Module Preliminary Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 Ir a c RAS Access Time 60ns 70ns 'C A C CAS Access Time 15ns 20ns 35ns >AA Access Time From Address 30ns >RC Cycle Time

Contextual Info: The Optimum Choice 300 RED SCHOOL LANE industries , INC. PART NUMBER V4LI2 "L“ NO DC FH DCR MAX. DCI MAX. "L” WITH DCI (p H ) PHILLIPSBURG, N.J. 08865 TEST LEVEL DCI (Amps) (VRMS) 5% 10% (908) 454-2600 FAX (908) 454-3742 FOR % DECREASE IN "LII <n> (Amps)

Contextual Info: IB M 1 1 D 1 3 6 0 Q IB M 1 1 E 1 3 6 0 Q IB M 1 1 D 2 3 6 0 Q IB M 1 1 E 2 3 6 0 Q 1M/2M x 36 DRAM Module Features All inputs & outputs are fully TTL & CMOS compatible Low active current dissipation Fast Page Mode access cycle Refresh Modes: RAS-Only, CBR, and Hidden

Contextual Info: IB M 1 1 D 1 3 6 0 B D IB M 1 1 E 1 3 6 0 B D 1 M x 36 D R A M M odule Features Low active current dissipation All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms