111III Search Results

Contextual Info: ÎÏÀ PER I COM PI74FCT163240 I I [ t I 11 I I M 11 I I 11 11 111 M I 111 111 II I I I II I 11 I 11 II 1111 11 ! 11E111 I 11 II 11 111 11 111 i 111 111111 i 1111 111 1111 U 1111 t M 111III M Fast CMOS 3.3V 16-Bit Octal Buffer/Line Driver Product Features:

ML100A

Abstract: HF70ACB
Contextual Info: Ferrite Chip EMI Suppressors ACB Series The ferrite chip EMI suppressor is a chip type ferrite bead for use as a measure to prevent EMI interference noises between electronic circuits. The ACB series is high density SMD type. FEATURES • Three materials and four shapes are available,

mJI 1032

Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
Contextual Info: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a

Intel 1103 DRAM

Abstract: D03B intel 1103 ram D018 D019 D032
Contextual Info: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA TPC8105-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH SPEED U -M O SII TPC8105-H LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

4N 26 TFK

Contextual Info: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: 51E 5 • Ôl3bb71 000377b 070 M S E K G seMIKRDN SEfäKRÖN- INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A , Vbe = - 2 V > CM I II UJ CD > VcBO Ie = lc Units 1200 V 1200 V 1200 V I VcEV Values 7 V lc D. C. 300 A If = - lc D. C. 300 A V ebo = Ib Ptot

POWER MODULE SVI 3101 D

Abstract: bc power module svi 3101 d SVI 3206 SVI 3101 POWER MODULE SVI 3101 temperature digital display JUMO Lan M UAA 1004 DP tda 8210 INTERFACING OUTPUT DISPLAYS 8212 TDA 9394
Contextual Info: \ V* %%ŸÎ\ \ k A. ' In December 1973 Intel shipped the first 8-bit, N-channel microprocessor, the 8080. Since then it has become the most widely usea microprocessor in the industry. Applications of the 8080 span from large, intelligent systems terminals to decompression computers for deep sea divers.

Contextual Info: Order this document by MC33157/D MOTOROLA M C 33157 H alf Bridge C ontroller and D river for Industrial Linear Tlibes The MC33157 includes the oscillator circuit and two output channels to control a half-bridge power stage. One of the channels is ground-referenced. The second one is floating to

1K x 8 static ram dip22

Abstract: EASE-AN-4050 uPD703128 ca2 dn 1319 uPD703129 transistors F6 DD52 transistor dd52 F12a U15839EE1V0UM00 upD70312
Contextual Info: Preliminary User’s Manual TM V850E/CA2 JUPITER 32-/16-bit Romless Microcontroller Hardware µPD703128, µPD703129 Document No. U15839EE1V0UM00 Date Published August 2003  NEC Corporation 2003 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

M51660L

Abstract: radio controlled SERVO DRIVER pulse stretcher circuit diagram servo motor control circuit simple proportional pulse stretcher M51660 m51660l mitsubishi pin configuration PNP transistor servo drive circuit diagram application pulse stretcher circuit
Contextual Info: MITSUBISHI <CONTROL / DRIVER IC> M51660L SERVO MOTOR CONTROL FOR RADIO CONTROL DESCRIPTION The M51660L is a semiconductor integrated circuit for use in servo motor control in radio control applications. Housed in a 14-pin molded plastic zig-zag inline package ZIP , the

27C1000 eprom

Abstract: 27C1000 MBM27C1000-20 Fujitsu MBM27C1000 MBM27C1000 27c1000a MBM27C1001-15 MBM27C1000-15 MBM27C1000-25
Contextual Info: FU JITSU CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 A p ril 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM) T he Fujitsu M BM 27C1000 EPROM Is a high spee d re a d -o n ly s ta tic m e m o ry th a t is

SO42

Abstract: skn 220 semikron SKN 71 so 32 skn4508
Contextual Info: s e MIKRDN Rectifier Diodes Ifrm s m axim um values for continuous operation IV r s m 80 A V rrm I 150 A SKN 45 SKN 70 SKN 71 IfaV (sin. 1 8 0 ; Tease = • ■ ■) V 5 0 A (1 1 8 °C ) 9 5 A (1 0 0 ° C ) 200 SKN 45/02 SKR 45/02 SKN 70/02 SKR 70/02 SKN 71/02 SKR 71/02*

K2610

Abstract: 2SK2610 SC-65
Contextual Info: TOSHIBA 2SK2610 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2610 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 5.9 MAX. •

Contextual Info: AEPSS128K16 STATIC RAM MODULE >> 131,072 x 16 Organization > > High speed address/chip select time > > High speed, High density 45 pin SIP > > Completely Static operation > > TTL compatible > > Low power, battery back-up operation capability > > Uses single +SV power supply

signal path designer

Contextual Info: PRELIMINARY DEVICE SPECIFICATION Q20000 SERIES ECL/TTL TURBO" LOGIC ARRAYS 020000 FEATURES • Up to 24000 gates, channelless architecture • 100ps equivalent gate delays • Ultra low power ,5-1.0mW/gate • 10K, 10KH, 100K ECL and mixed ECL/TTL capability

Contextual Info: ANALOG DEVICES 12-Bit, 125 MSPS High Performance TxDAC D/A Converter AD9752* FEATURES High Performance M em ber of Pin-Com patible TxDAC Product Family 125 MSPS Update Rate 12-Bit Resolution Excellent Spurious Free Dynamic Range Performance SFDR to Nyquist @ 5 MHz Output: 79 dBc

Contextual Info: 500mA, 3.3V Linear Regulator with Auxiliary Control Features Description The CS5231-3 combines a three-termi­ nal linear regulator with circuitry con­ trolling an external PFET transistor thus managing two input supplies. The part provides a 3.3V regulated

SA150X

Abstract: C1008A
Contextual Info: NIN Series Molded Chip Wirewound Inductors FEATURES • EIA SIZES, A 1210 and B (1812), NEW C (1008) NOW AVAILABLE • EXCELLENT HIGH Q AND HIGH SELF-RESONANT FREQUENCY CHARACTERISTICS • • • • BOTH FLOW AND REFLOW SOLDERING APPLICABLE HIGH INDUCTANCE AVAILABLE IN SMALL SIZE

Contextual Info: CPU 5-Bit Synchronous Buck Controller Description The CS5155 is a 5-bit synchronous du al N -C hannel buck controller. It is designed to prov id e u n p rece­ den ted transient response for to d a y 's d em an d in g high-density, high-speed logic. The regulator

144EU

Abstract: 1J1N A144E 144EK
Contextual Info: Transistors Digital transistors built-in resistors DTA144EE/DTA144EUA/DTA144EKA/DTA144ESA •F eatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isola­

AT90S2312

Abstract: HA 1100 soic 90S2312 AT90S2312PC
Contextual Info: AT90S2312 Features • • • • • • • • • . • • • • • • • • • • • Utilizes the AVfl Enhanced RISC Architecture AVff™ - High Performance and Low Power RISC Architecture 112 Powerful Instructions - Most Single Clock Cycle Execution

32-PIN

Abstract: CAT271-B2
Contextual Info: CAT ALY ST SEMICONDUCTOR 12E 0 | ntZbTS B IH IIIIIlllllllo ^ n ^ r s -r • I I I I I I I f H I I 111 s e m ic o n d u c t o r , in c . 0000550 *1 I CAT27J256L1 [L O W P O W E R IN D U S T R IA L ] CAT27HC256LI - Low Power Industrial Temperature 3 2 ,7 6 8 x 8-BIT H IGH-SPEED CM O S EPR O M

HLH3

Contextual Info: PLL frequency synthesizer for tuners B U 2615 BU2615F B U 2 6 1 5 FS The BU2615, BU2615F, and BU2615FS are PLL frequency synthesizers that can operate in the AM and FM bands. They have low power consumption and have internal high-sensitivity RF amplifiers.